Combining piezoelectric MEMS with optical gap-plasmon metasurfaces enables electrically driven dynamic 2D wavefront shaping.

Tunable focusing is a desired property in a wide range of optical imaging and sensing technologies but has tended to require bulky components that cannot be integrated on-chip and have slow actuation speeds. Recently, integration of metasurfaces into electrostatic micro-electromechanical system (MEMS) architectures has shown potential to overcome these challenges but has offered limited out-of-plane displacement range while requiring large voltages. We demonstrate for the first time, to the best of our knowledge, a movable metasurface lens actuated by integrated thin-film PZT MEMS, which has the advantage of offering large displacements at low voltages. An out-of-plane displacement of a metasurface in the range of 7.2 μ m is demonstrated under a voltage application of 23 V. This is roughly twice the displacement at a quarter of the voltage of state of the art electrostatic out-of-plane actuation of metasurfaces. Using this tunability, we demonstrate a varifocal lens doublet with a focal shift of the order of 250 μ m at the wavelength 1.55 μm. The thin-film PZT MEMS-metasurface is a promising platform for miniaturized varifocal components.

We demonstrate the fabrication of diffraction-limited dielectric metasurface lenses for NIR by the use of standard industrial high-throughput silicon processing techniques: UV nano imprint lithography (UV-NIL) combined with continuous reactive ion etching (RIE) and pulsed Bosch deep reactive ion etching (DRIE). As the research field of metasurfaces moves towards applications, these techniques are relevant as potential replacements of commonly used cost-intensive fabrication methods utilizing electron beam ithography. We show that washboard-type sidewall surface roughness arising from the Bosch DRIE process can be compensated for in the design of the metasurface, without deteriorating lens quality. Particular attention is given to fabrication challenges that must be overcome towards high-throughput production of relevance to commercial applications. Lens efficiencies are measured to be 25.5% and 29.2% at wavelengths λ = 1.55μm and λ = 1.31μm, respectively. A number of routes towards process optimization are proposed in relation to encountered challenges.

The research field of metasurfaces has attracted considerable attention in recent years due to its high potential to achieve flat, ultrathin optical devices of high performance. Metasurfaces, consisting of artificial patterns of subwavelength dimensions, often require fabrication techniques with high aspect ratios (HARs). Bosch and Cryogenic methods are the best etching candidates of industrial relevance towards the fabrication of these nanostructures. In this paper, we present the fabrication of Silicon (Si) metalenses by the UV-Nanoimprint Lithography method and cryogenic Deep Reactive Ion Etching (DRIE) process and compare the results with the same structures manufactured by Bosch DRIE both in terms of technological achievements and lens efficiencies. The Cryo- and Bosch-etched lenses attain efficiencies of around 39% at wavelength λ = 1.50 µm and λ = 1.45 µm against a theoretical level of around 61% (for Si pillars on a Si substrate), respectively, and process modifications are suggested towards raising the efficiencies further. Our results indicate that some sidewall surface roughness of the Bosch DRIE is acceptable in metalense fabrication, as even significant sidewall surface roughness in a non-optimized Bosch process yields reasonable efficiency levels.

This study presents the design and manufacture of metasurface lenses optimized for focusing light with 1.55 µm wavelength. The lenses are fabricated on silicon substrates using electron beam lithography, ultraviolet-nanoimprint lithography and cryogenic deep reactive-ion etching techniques. The designed metasurface makes use of the geometrical phase principle and consists of rectangular pillars with target dimensions of height h = 1200 nm, width w = 230 nm, length l = 354 nm and periodicity p = 835 nm. The simulated efficiency of the lens is 60%, while the master lenses obtained by using electron beam lithography are found to have an efficiency of 45%. The lenses subsequently fabricated via nanoimprint are characterized by an efficiency of 6%; the low efficiency is mainly attributed to the rounding of the rectangular nanostructures during the pattern transfer processes from the resist to silicon due to the presence of a thicker residual layer.

As metasurfaces begin to find industrial applications there is a need to develop scalable and cost-effective fabrication techniques which offer sub-100 nm resolution while providing high throughput and large area patterning. Here we demonstrate the use of UV-Nanoimprint Lithography and Deep Reactive Ion Etching (Bosch and Cryogenic) towards this goal. Robust processes are described for the fabrication of silicon rectangular pillars of high pattern fidelity. To demonstrate the quality of the structures, metasurface lenses, which demonstrate diffraction limited focusing and close to theoretical efficiency for NIR wavelengths λ ∈ (1.3 μm, 1.6 μm), are fabricated. We demonstrate a process which removes the characteristic sidewall surface roughness of the Bosch process, allowing for smooth 90-degree vertical sidewalls. We also demonstrate that the optical performance of the metasurface lenses is not affected adversely in the case of Bosch sidewall surface roughness with 45 nm indentations (or scallops). Next steps of development are defined for achieving full wafer coverage.