Large-area zinc oxide (ZnO) nanowire arrays have important applications in flat-panel X-ray sources and detectors. Doping is an effective way to enhance the emission current by changing the nanowire conductivity and the lattice structure. In this paper, large-area indium-doped ZnO nanowire arrays were prepared on indium-tin-oxide-coated glass substrates by the thermal oxidation method. Doping with indium concentrations up to 1 at% was achieved by directly oxidizing the In-Zn alloy thin film. The growth process was subsequently explained using a self-catalytic vapor-liquid-solid growth mechanism. The field emission measurements show that a high emission current of ~20 mA could be obtained from large-area In-doped sample with a 4.8 × 4.8 cm² area. This high emission current was attributed to the high crystallinity and conductivity change induced by the indium dopants. Furthermore, the application of these In-doped ZnO nanowire arrays in a flat-panel X-ray source was realized and distinct X-ray imaging was demonstrated.

A cold cathode has many applications in high frequency and high power electronic devices, X-ray source, vacuum microelectronic devices and vacuum nanoelectronic devices. After decades of exploration on the cold cathode materials, ZnO nanowire has been regarded as one of the most promising candidates, in particular for large area field emitter arrays (FEAs). Numerous works on the fundamental field emission properties of ZnO nanowire, as well as demonstrations of varieties of large area vacuum microelectronic applications, have been reported. Moreover, techniques such as modifying the geometrical structure, surface decoration and element doping were also proposed for optimizing the field emissions. This paper aims to provide a comprehensive review on recent progress on the ZnO nanowire cold cathode and its applications. We will begin with a brief introduction on the synthesis methods and discuss their advantages/disadvantages for cold cathode applications. After that, the field emission properties, mechanism and optimization will be introduced in detail. Then, the development for applications of large-area ZnO nanowire FEAs will also be covered. Finally, some future perspectives are provided.

A fully vacuum-sealed addressable flat-panel X-ray source based on ZnO nanowire field emitter arrays (FEAs) was fabricated. The device has a diode structure composed of cathode panel and anode panel. ZnO nanowire cold cathodes were prepared on strip electrodes on a cathode panel and Mo thin film strips were prepared on an anode panel acting as the target. Localized X-ray emission was realized by cross-addressing of cathode and anode electrodes. A radiation dose rate of 10.8 μGy/s was recorded at the anode voltage of 32 kV. The X-ray imaging of objects using different addressing scheme was obtained and the imaging results were analyzed. The results demonstrated the feasibility of achieving addressable flat-panel X-ray source using diode-structure for advanced X-ray imaging.

X-ray sources have important applications in medical diagnosis, industrial inspection, etc. Transparent X-ray source has not been reported before, which enables the applications such as simultaneous imaging using X-ray and visible light. In this article, a fully vacuum-encapsulated transparent flat-panel X-ray source was prepared by using ZnO nanowires cold cathode and indium-tin-oxide (ITO) transmission anode. The effect of thicknesses of ITO film on X-ray radiation intensity was studied. A radiation dose rate of 6.85 mGy/s measured at 5 cm in front of the flat-panel X-ray source (FPXS) under 48-kV anode voltage and an optical transmittance of 72.63% at 550-nm light were achieved. X-ray spectra show the indium is the main element to generate the X-ray. By adopting the device in an X-ray and visible light dual-functional inspection set-up, the X-ray and visible light imaging of objects were demonstrated simultaneously.

Improving the collection efficiency is one of the major challenges in fabricating high performance gated hot carrier tunneling devices that have important applications in electronics and optoelectronics. In this work, a general model for a gated hot carrier tunneling device has been established to figure out the optimized thickness of a tunneling barrier for maximizing the collection efficiency. Simulation indicates that the maximum efficiency increases with the field F, the tunneling barrier height Φ₀, and the mean free path λ but decreases with the threshold energy E_t. In addition, the optimal thickness of the tunneling barrier decreases as F and Φ₀ increase or λ and E_t decrease, which varies from ∼6 to ∼9 nm depending on the above-mentioned parameters. To verify the model, electron emission characteristics of a few layers graphene (FLG)/h-BN/FLG heterostructure with different thickness of h-BN have been measured. A similar dependence of the averaged emission efficiency on the h-BN thickness has been obtained, which can be fitted by an extended model for the case of FLG/h-BN/FLG with consideration of a hot hole-induced Auger process. All the results are useful for designing a high performance hot carrier tunneling device.