A fully vacuum-sealed addressable flat-panel X-ray source based on ZnO nanowire field emitter arrays (FEAs) was fabricated. The device has a diode structure composed of cathode panel and anode panel. ZnO nanowire cold cathodes were prepared on strip electrodes on a cathode panel and Mo thin film strips were prepared on an anode panel acting as the target. Localized X-ray emission was realized by cross-addressing of cathode and anode electrodes. A radiation dose rate of 10.8 μGy/s was recorded at the anode voltage of 32 kV. The X-ray imaging of objects using different addressing scheme was obtained and the imaging results were analyzed. The results demonstrated the feasibility of achieving addressable flat-panel X-ray source using diode-structure for advanced X-ray imaging.

Gated ZnO nanowire field emitter arrays (FEAs) have important applications in large-area vacuum microelectronic devices such as flat panel X-ray sources and photodetectors. As the application requires high-pixel-density FEAs, how the pixel density affects the emission performance of the gated ZnO nanowire FEAs needs investigating. In this paper, the performance of coaxis planar -gated ZnO nanowire FEAs was simulated under different pixel sizes while keeping the lateral geometric parameter in proportion. The variations in emission current and gate modulation with pixel size were obtained. Using the obtained device parameters, the coaxis planar-gated ZnO nanowire FEAs were prepared. Field emission measurement results showed that a current density of 3.2 mA/cm² was achieved from the fabricated ZnO nanowire FEAs when the gate voltage was 140 V. A transconductance of 253 nS was obtained, indicating effective gate control. The improved performance is attributed to optimized gate modulation.

A novel reflective anode flat-panel X-ray source using ZnO nanowire cold cathode and a metal anode has been developed. Simulation analysis indicated that the reflective anode structure reduces electric field concentration compared to a transmission anode structure. The current–voltage characteristics, X-ray radiation dose rate, and stability of the fabricated device were thoroughly characterized. The device demonstrated a maximum emission current of 481.1 μA and a maximum radiation dose rate of 303 μGy/s at an anode voltage of 40 kV. The X-ray imaging of various objects was also conducted. Our findings are of significance for developing high-performance, robust flat-panel X-ray sources for diverse applications.

Vacuum flat panel detectors (VFPDs) using cold cathode have important applications in large-area photoelectric detection. Based on the electron-bombardment-induced photoconductivity (EBIPC) mechanism, the photoconductor-type VFPDs achieved high detection sensitivity. However, pixelated imaging devices have not yet been developed. In this paper, we fabricate a 4 × 7 pixel vacuum flat panel detector array made of ZnS photoconductor and ZnO nanowires cold cathode for an imaging application. The responsivity of the device and the pixel current uniformity are studied, and imaging of the patterned objects is achieved. Our results verify the feasibility of VFPDs for imaging.