A segmented hollow cathode (SHC) geometry was used for electrostatic confinement of plasma, and surface engineering treatments were conducted in this arrangement. The assessed processes included plasma nitriding, reactive deposition of sputtered material, and deposition of carbonaceous films by plasma-enhanced chemical vapor deposition with a bipolar pulsed-dc power supply on steel substrates. The treated specimens exhibited uniform surface morphology and deposition layers. Characterization techniques included optical microscopy, scanning electron microscopy with energy dispersive X-ray capability, and X-ray diffraction. The advantages and potential applications of the SHC arrangement are discussed in view of these results.

Atomic layer etching (ALE) of GaN on silicon substrates has been investigated using fluorine-based chemistry. The ALE process used for this study consists of a modification step using SF6 plasma and a removal step using argon plasma. Two configurations were studied in which the distance between the sample and the plasma source was modified. The energy scan, synergy, selective etching of GaFx by Ar+ ion bombardment, and self-limiting etching regime of the ALE of GaN were first investigated. An etch per cycle of 0.50 nm/cycle averaged over 100 cycles was reached for GaN ALE. The self-limiting regime was also obtained for both SF6 and argon plasma steps. Moreover, a synergy rate as high as 78% was achieved. It was found that the GaFx-modified layer can be selectively sputtered by applying a self-bias voltage while the argon ion energy is maintained below the sputtering threshold of GaN.