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Daniel Araujo
Departamento de Ciencia de los Materiales e IM y QI, Facultad de Ciencias, Universidad de Cádiz, 11510 Puerto Real (Cádiz), Spain

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Journal article
Published: 18 June 2020 in Nanomaterials
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Diamond surface properties show a strong dependence on its chemical termination. Hydrogen-terminated and oxygen-terminated diamonds are the most studied terminations with many applications in the electronic and bioelectronic device field. One of the main techniques for the characterization of diamond surface terminations is X-ray photoelectron spectroscopy (XPS). In this sense, the use of angle-resolved XPS (ARXPS) experiments allows obtaining depth-dependent information used here to evidence (100)-O-terminated diamond surface atomic configuration when fabricated by acid treatment. The results were used to compare the chemistry changes occurring during the oxidation process using a sublayer XPS intensity model. The formation of non-diamond carbon phases at the subsurface and higher oxygen contents were shown to result from the oxygenation treatment. A new (100) 1 × 1:O surface reconstruction model is proposed to explain the XPS quantification results of O-terminated diamond.

ACS Style

Gonzalo Alba; M. Pilar Villar; Rodrigo Alcántara; Javier Navas; Daniel Araujo. Surface States of (100) O-Terminated Diamond: Towards Other 1 × 1:O Reconstruction Models. Nanomaterials 2020, 10, 1193 .

AMA Style

Gonzalo Alba, M. Pilar Villar, Rodrigo Alcántara, Javier Navas, Daniel Araujo. Surface States of (100) O-Terminated Diamond: Towards Other 1 × 1:O Reconstruction Models. Nanomaterials. 2020; 10 (6):1193.

Chicago/Turabian Style

Gonzalo Alba; M. Pilar Villar; Rodrigo Alcántara; Javier Navas; Daniel Araujo. 2020. "Surface States of (100) O-Terminated Diamond: Towards Other 1 × 1:O Reconstruction Models." Nanomaterials 10, no. 6: 1193.

Journal article
Published: 18 February 2020 in Surfaces
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Concerning diamond-based electronic devices, the H-terminated diamond surface is one of the most used terminations as it can be obtained directly by using H2 plasma, which also is a key step for diamond growth by chemical vapour deposition (CVD). The resultant surfaces present a p-type surface conductive layer with interest in power electronic applications. However, the mechanism for this behavior is still under discussion. Upward band bending due to surface transfer doping is the most accepted model, but has not been experimentally probed as of yet. Recently, a downward band bending very near the surface due to shallow acceptors has been proposed to coexist with surface transfer doping, explaining most of the observed phenomena. In this work, a new approach to the measurement of band bending by angle-resolved X-ray photoelectron spectroscopy (ARXPS) is proposed. Based on this new interpretation, a downward band bending of 0.67 eV extended over 0.5 nm was evidenced on a (100) H-terminated diamond surface.

ACS Style

Gonzalo Alba; David Eon; M. Pilar Villar; Rodrigo Alcántara; Gauthier Chicot; Jesús Cañas; Juliette Letellier; Julien Pernot; Daniel Araujo. H-Terminated Diamond Surface Band Bending Characterization by Angle-Resolved XPS. Surfaces 2020, 3, 61 -71.

AMA Style

Gonzalo Alba, David Eon, M. Pilar Villar, Rodrigo Alcántara, Gauthier Chicot, Jesús Cañas, Juliette Letellier, Julien Pernot, Daniel Araujo. H-Terminated Diamond Surface Band Bending Characterization by Angle-Resolved XPS. Surfaces. 2020; 3 (1):61-71.

Chicago/Turabian Style

Gonzalo Alba; David Eon; M. Pilar Villar; Rodrigo Alcántara; Gauthier Chicot; Jesús Cañas; Juliette Letellier; Julien Pernot; Daniel Araujo. 2020. "H-Terminated Diamond Surface Band Bending Characterization by Angle-Resolved XPS." Surfaces 3, no. 1: 61-71.

Journal article
Published: 28 November 2018 in Polymers
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Polymer-based composites are becoming widely used for structural applications, in particular in the aeronautic industry. The present investigation focuses on the mechanical integrity of an epoxy resin of which possible damage results in limitation or early stages of dramatic failure. Therefore, a coupled experimental and numerical investigation of failure in an epoxy resin thermoset is carried out that opens the route to an overall micromechanical analysis of thermoset-based composites. In the present case, failure is preceded by noticeable plasticity in the form of shear bands similar to observations in ductile glassy polymers. Thus, an elastic-visco-plastic constitutive law initially devoted to glassy polymer is adopted that captures the rate- dependent yield stress followed by softening and progressive hardening at continued deformation. A general rate-dependent cohesive model is used to describe the failure process. The parameters involved in the description are carefully identified and used in a finite element calculation to predict the material's toughness for different configurations. Furthermore, the present work allows investigation of nucleation and crack growth in such resins. In particular, a minimum toughness can be derived from the model which is difficult to evaluate experimentally and allows accounting for the notch effect on the onset of failure. This is thought to help in designing polymer-based composites.

ACS Style

Dery Torres; Shu Guo; Maria-Pilar Villar; Daniel Araujo; Rafael Estevez. Calibration of a Cohesive Model for Fracture in Low Cross-Linked Epoxy Resins. Polymers 2018, 10, 1321 .

AMA Style

Dery Torres, Shu Guo, Maria-Pilar Villar, Daniel Araujo, Rafael Estevez. Calibration of a Cohesive Model for Fracture in Low Cross-Linked Epoxy Resins. Polymers. 2018; 10 (12):1321.

Chicago/Turabian Style

Dery Torres; Shu Guo; Maria-Pilar Villar; Daniel Araujo; Rafael Estevez. 2018. "Calibration of a Cohesive Model for Fracture in Low Cross-Linked Epoxy Resins." Polymers 10, no. 12: 1321.

Journal article
Published: 10 October 2018 in Nanomaterials
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The development of new power devices taking full advantage of the potential of diamond has prompted the design of innovative 3D structures. This implies the overgrowth towards various crystallographic orientations. To understand the consequences of such growth geometries on the defects generation, a Transmission Electron Microscopy (TEM) study of overgrown, mesa-patterned, homoepitaxial, microwave-plasma-enhanced, chemical vapor deposition (MPCVD) diamond is presented. Samples have been grown under quite different conditions of doping and methane concentration in order to identify and distinguish the factors involved in the defects generation. TEM is used to reveal threading dislocations and planar defects. Sources of dislocation generation have been evidenced: (i) doping level versus growth plane, and (ii) methane concentration. The first source of dislocations was shown to generate Burgers vector dislocations above a critical boron concentration, while the second induces type Burgers vector above a critical methane/hydrogen molar ratio. The latter is attributed to partial dislocations whose origin is related to the dissociation of perfect ones by a Shockley process. This dissociation generated stacking faults that likely resulted in penetration twins, which were also observed on these samples. Lateral growth performed at low methane and boron content did not exhibit any dislocation.

ACS Style

Fernando Lloret; David Eon; Etienne Bustarret; Daniel Araujo. Crystalline Defects Induced during MPCVD Lateral Homoepitaxial Diamond Growth. Nanomaterials 2018, 8, 814 .

AMA Style

Fernando Lloret, David Eon, Etienne Bustarret, Daniel Araujo. Crystalline Defects Induced during MPCVD Lateral Homoepitaxial Diamond Growth. Nanomaterials. 2018; 8 (10):814.

Chicago/Turabian Style

Fernando Lloret; David Eon; Etienne Bustarret; Daniel Araujo. 2018. "Crystalline Defects Induced during MPCVD Lateral Homoepitaxial Diamond Growth." Nanomaterials 8, no. 10: 814.

Journal article
Published: 31 July 2018 in Nanomaterials
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In contrast to Si technology, amorphous alumina cannot act as a barrier for a carrier at diamond MOSFET gates due to their comparable bandgap. Indeed, gate leaks are generally observed in diamond/alumina gates. A control of the alumina crystallinity and its lattice matching to diamond is here demonstrated to avoid such leaks. Transmission electron microscopy analysis shows that high temperature atomic layer deposition, followed by annealing, generates monocrystalline reconstruction of the gate layer with an optimum lattice orientation with respect to the underneath diamond lattice. Despite the generation of γ-alumina, such lattice control is shown to prohibit the carrier transfer at interfaces and across the oxide.

ACS Style

Marina Gutiérrez; Fernando Lloret; Toan T. Pham; Jesús Cañas; Daniel F. Reyes; David Eon; Julien Pernot; Daniel Araújo. Control of the Alumina Microstructure to Reduce Gate Leaks in Diamond MOSFETs. Nanomaterials 2018, 8, 584 .

AMA Style

Marina Gutiérrez, Fernando Lloret, Toan T. Pham, Jesús Cañas, Daniel F. Reyes, David Eon, Julien Pernot, Daniel Araújo. Control of the Alumina Microstructure to Reduce Gate Leaks in Diamond MOSFETs. Nanomaterials. 2018; 8 (8):584.

Chicago/Turabian Style

Marina Gutiérrez; Fernando Lloret; Toan T. Pham; Jesús Cañas; Daniel F. Reyes; David Eon; Julien Pernot; Daniel Araújo. 2018. "Control of the Alumina Microstructure to Reduce Gate Leaks in Diamond MOSFETs." Nanomaterials 8, no. 8: 584.

Journal article
Published: 29 June 2018 in Nanomaterials
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Epitaxial lateral growth will be required if complex diamond-based device architecture, such as, for example, Metal-oxide-semiconductor Field-effect transistors (MOSFETs) or epitaxial lateral overgrowth (ELO) substrates, need to be developed for high-power applications. To this end, undoped and doped non-planar homoepitaxial diamond were overgrown on (001)-oriented diamond-patterned substrates. Defects induced by both the heavy boron doping and three-dimensional (3D) growth were studied by transmission electron microscopy (TEM). At high methane and boron concentrations, threading dislocations with Burgers vectors b = 1/6 〈211〉, b = 1/2 〈110〉, or both were observed. Their generation mechanisms were established, revealing boron proximity effects as precursors of dislocations generated in boron-doped samples and providing clues as to the different Burgers vectors. The concentration ranges of boron and methane resulting in good crystalline quality depended on the plane of growth. The microwave plasma-enhanced chemical vapour deposition (MPCVD) growth conditions and the maximum boron concentration versus plane orientation yielding a dislocation-free diamond epitaxial layer were determined.

ACS Style

Fernando Lloret; David Eon; Étienne Bustarret; Alexandre Fiori; Daniel Araujo. Boron-Doping Proximity Effects on Dislocation Generation during Non-Planar MPCVD Homoepitaxial Diamond Growth. Nanomaterials 2018, 8, 480 .

AMA Style

Fernando Lloret, David Eon, Étienne Bustarret, Alexandre Fiori, Daniel Araujo. Boron-Doping Proximity Effects on Dislocation Generation during Non-Planar MPCVD Homoepitaxial Diamond Growth. Nanomaterials. 2018; 8 (7):480.

Chicago/Turabian Style

Fernando Lloret; David Eon; Étienne Bustarret; Alexandre Fiori; Daniel Araujo. 2018. "Boron-Doping Proximity Effects on Dislocation Generation during Non-Planar MPCVD Homoepitaxial Diamond Growth." Nanomaterials 8, no. 7: 480.

Journal article
Published: 01 June 2018 in Materials Science Forum
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We report for the first time the successful heteroepitaxial growth of Si(100) oriented layer on top of a 3C-SiC(001) seed. By using a post-growth modification of the 3C-SiC surface (pulse insertion of precursors during cooling), it led to a change in Si nucleation, favoring squared (100) islands instead of elongated (110) ones. Without this surface modification step, the Si layers grown on 3C-SiC were always polycrystalline with a mixture of (110) and (100) orientations. Using such Si(100) layer grown on top of 3C-SiC(100), a (100) oriented 3C-SiC single crystalline layer was successfully grown on top, fabricating thus for the first time a fully (100) oriented multilayer heterostructure made of Si(substrate)/SiC/Si/SiC.

ACS Style

Taguhi Yeghoyan; Kassem Alassaad; Sean R.C. McMitchell; Marina Gutierrez; Véronique Soulière; Daniel Araujo; Gabriel Ferro. Silicon (001) Heteroepitaxy on 3C-SiC(001)/Si(001) Seed. Materials Science Forum 2018, 924, 128 -131.

AMA Style

Taguhi Yeghoyan, Kassem Alassaad, Sean R.C. McMitchell, Marina Gutierrez, Véronique Soulière, Daniel Araujo, Gabriel Ferro. Silicon (001) Heteroepitaxy on 3C-SiC(001)/Si(001) Seed. Materials Science Forum. 2018; 924 ():128-131.

Chicago/Turabian Style

Taguhi Yeghoyan; Kassem Alassaad; Sean R.C. McMitchell; Marina Gutierrez; Véronique Soulière; Daniel Araujo; Gabriel Ferro. 2018. "Silicon (001) Heteroepitaxy on 3C-SiC(001)/Si(001) Seed." Materials Science Forum 924, no. : 128-131.

Journal article
Published: 01 March 2018 in Applied Surface Science
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Phenomena related with the diamond surface of both power electronic and biosensor devices govern their global behaviour. In particular H- or O-terminations lead to wide variations in their characteristics. To study the origins of such aspects in greater depth, different methods to achieve oxygen terminated diamond were investigated following a multi-technique approach. DFT calculations were then performed to understand the different configurations between the C and O atoms. Three methods for O-terminating the diamond surface were performed: two physical methods with ozone at different pressures, and an acid chemical treatment. X-ray photoelectron spectroscopy, spectroscopic ellipsometry, HRTEM, and EELS were used to characterize the oxygenated surface. Periodic-DFT calculations were undertaken to understand the effect of the different ways in which the oxygen atoms are bonded to carbon atoms on the diamond surface. XPS results showed the presence of hydroxyl or ether groups, composed of simple Csingle bondO bonds, and the acid treatment resulted in the highest amount of O on the diamond surface. In turn, ellipsometry showed that the different treatments led to the surface having different optical properties, such as a greater refraction index and extinction coefficient in the case of the sample subjected to acid treatment. TEM analysis showed that applying temperature treatment improved the distribution of the oxygen atoms at the interface and that this generates a thinner amount of oxygen at each position and higher interfacial coverage. Finally, DFT calculations showed both an increase in the number of preferential electron transport pathways when π bonds and ether groups appear in the system, and also the presence of states in the middle of the band gap when there are π bonds, Cdouble bondC or Cdouble bondO.

ACS Style

Javier Navas; Daniel Araujo; José Carlos Piñero; Antonio Sánchez-Coronilla; Eduardo Blanco; Pilar Villar; Rodrigo Alcántara; Josep Montserrat; Matthieu Florentin; David Eon; Julien Pernot. Oxygen termination of homoepitaxial diamond surface by ozone and chemical methods: An experimental and theoretical perspective. Applied Surface Science 2018, 433, 408 -418.

AMA Style

Javier Navas, Daniel Araujo, José Carlos Piñero, Antonio Sánchez-Coronilla, Eduardo Blanco, Pilar Villar, Rodrigo Alcántara, Josep Montserrat, Matthieu Florentin, David Eon, Julien Pernot. Oxygen termination of homoepitaxial diamond surface by ozone and chemical methods: An experimental and theoretical perspective. Applied Surface Science. 2018; 433 ():408-418.

Chicago/Turabian Style

Javier Navas; Daniel Araujo; José Carlos Piñero; Antonio Sánchez-Coronilla; Eduardo Blanco; Pilar Villar; Rodrigo Alcántara; Josep Montserrat; Matthieu Florentin; David Eon; Julien Pernot. 2018. "Oxygen termination of homoepitaxial diamond surface by ozone and chemical methods: An experimental and theoretical perspective." Applied Surface Science 433, no. : 408-418.

Article
Published: 15 August 2017 in physica status solidi (a)
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Diamond lateral growth is a useful technique to assess 3D architectures of devices. The requirement of the overgrowth on etched substrates has been observed to have additional benefit in the crystallinity of the diamond. The surface roughness is enhanced and threading dislocation density is reduced as a consequence of the lateral growth on patterned substrates. Under these premises, this contribution presents a study of defects and terrace coalescences for the lateral growth on a trenched surface substrates with different trench widths. The latter was achieved on 100-oriented HPHT diamond substrates grown by MPCVD and using very thin-doped layers to mark the growth plane every 100 nm. The results showed high density of threading dislocations that were gathered to the centre of the coalescence. These threading dislocations, as well as planar defects, were investigated using transmission electron microscopy. The mechanism of those defects generation and the better conditions to achieve defect-free areas are discussed.

ACS Style

Fernando Lloret; Marina Gutierrez; Daniel Araujo; David Eon; Étienne Bustarret. MPCVD Diamond Lateral Growth Through Microterraces to Reduce Threading Dislocations Density. physica status solidi (a) 2017, 214, 1 .

AMA Style

Fernando Lloret, Marina Gutierrez, Daniel Araujo, David Eon, Étienne Bustarret. MPCVD Diamond Lateral Growth Through Microterraces to Reduce Threading Dislocations Density. physica status solidi (a). 2017; 214 (11):1.

Chicago/Turabian Style

Fernando Lloret; Marina Gutierrez; Daniel Araujo; David Eon; Étienne Bustarret. 2017. "MPCVD Diamond Lateral Growth Through Microterraces to Reduce Threading Dislocations Density." physica status solidi (a) 214, no. 11: 1.

Conference paper
Published: 20 December 2016 in European Microscopy Congress 2016: Proceedings
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In the view of developing high performance metal-oxide-diamond field effect transistor (diamond MOSFET), recent reports presents different approach in the choice of the gate material and, in particular, on the dielectric layer [1-2]. However, a nanometric analysis of the band levels is necessary to understand the electron dynamic across the MOS stack. Recently, STEM-EELS have been revealed as reliable technique to estimate the bandgap of SiO2 dielectric materials. Nevertheless, its applicability has been limited to SiNx materials.To evaluate electron transitions near the bandgap energy in the EELS spectra, researchers have to overcome several experimental difficulties. Here, we evaluate the effect of Čerenkov radiation and volume plasmon-related peaks in low-loss range of EELS spectra. In this study, STEM-EELS techniques are used to analyse the O-terminated diamond/Al2O3 interface (similarly to previous studies presented in SiO2 by other authors [3]). Indeed, volume plasmons (VP) and Čerenkov (Ch) radiation contribution are evidenced in Fig.1, which also shows diamond-related D1-2 peaks and Al2O3-related peak A1 however, in the Al layer, only plasmon-related peaks are revealed. Probe position of the previously presented EELS spectra are shown in Fig.2, as numbered dots. Figure 2 shows 001-BF TEM micrography of the diamond/Al2O3/Al layers. Inset of Fig.2 shows HREM micrography of the diamond/Al2O3 interface, revealing variations in the crystalline quality of the low temperature (100ºC) ALD-deposited Al2O3 layer.In this work, we present a methodology to evaluate the influence of the Čerenkov losses and plasmon-related peaks in the low-loss EELS spectra. In some cases, such peaks are shown to mask the interband-related transition. Indeed, in such cases, Čerenkov-related and plasmon-related peaks have to be deconvoluted and removed, in order to accurately apply the linear-fit method [3], which allows calculating the diamond/oxide bandgaps.The previously described methodology allows determining the bandgap variations in the oxygen-terminated diamond/oxide interfaces.Keywords:EELS;diamond;MOSFET;bandgap. The previously described methodology allows determining the bandgap variations in the oxygen‐terminated diamond/oxide interfaces.

ACS Style

José Piñero; Daniel Araújo; Pilar Villar; Julien Pernot. Diamond-based MOSFETs: Bandgap interface profiling by STEM-EELS. European Microscopy Congress 2016: Proceedings 2016, 656 -657.

AMA Style

José Piñero, Daniel Araújo, Pilar Villar, Julien Pernot. Diamond-based MOSFETs: Bandgap interface profiling by STEM-EELS. European Microscopy Congress 2016: Proceedings. 2016; ():656-657.

Chicago/Turabian Style

José Piñero; Daniel Araújo; Pilar Villar; Julien Pernot. 2016. "Diamond-based MOSFETs: Bandgap interface profiling by STEM-EELS." European Microscopy Congress 2016: Proceedings , no. : 656-657.

Conference paper
Published: 20 December 2016 in European Microscopy Congress 2016: Proceedings
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Synthetic diamond is one of the most promising materials for high power devices due to its extraordinary physical properties, such as high thermal conductivity (22 W/cm K, 4 times that of Cu), electric breakdown field (>10 MV/cm), and carrier mobility (mn =1000 cm2/Vs, mp = 2000 cm2/ Vs). Moreover, 3D architectures, i.e. lateral growth, allowed the use of vertical geometries for the design of such devices, in addition to other advantages such as higher miniaturization, distribution of the electric field and reduction of technology steps and costs. In fact, in the quest for power electronic devices sustaining ever higher reverse blocking voltages and forward currents, buried heavily boron doped (p+) diamond layers have been shown recently [1] to reduce markedly the on-state resistance (Ron) of pseudo-vertical crystal diamond Schottky diodes. Such advanced designs rely on an improved control of selective 3D overgrowth of dry etched mesa and trenches [2].Here, MPCVD diamond overgrowth on patterned-etched diamond substrate is demonstrated to be highly selective depending on the methane concentration. This can be very useful for the design of 3D engineered semiconducting devices such as p-n junctions. However, some growing conditions are shown to generate defects (dislocations, planar defects…). In addition, boron doping is also shown to induce the generation by a proximity strain related mechanism [3] of another type of defects. Mesa structures were fabricated by reactive-ion etching (RIE) on masked substrates. Overgrowth was performed by microwave induced plasma chemical vapor deposition (MPCVD). A stratigraphic approach of heavily boron doped layers and undoped ones allows to follow the “history” of the growth, in the vicinity of mesa patterns [4], thanks to further cross section TEM observations. The latter identify and distinguish between extended defects generated by: (i) the boron inclusion, (ii) the strain related to the mesa-step and (iii) the growth conditions.Defects are studied using dark field (DF) and weak beam DF (WB) in diffraction contrast modes on focused ion beam lamellas. From the invisibility criterion, and families of Burger vectors have been identified. Based on the position of this defects respect the MESA structure, their origin is identified to be: (i) edge and threading dislocations with type of Burger vector are favorably generated by the boron doping while (ii) planar defects with type of Burger vector are highly influenced by the strain accumulated in the corner of the step generated by the mask before the overgrowth.In addition, multilayer doping allows identifying the regions of different growth orientation in the mentioned stratigraphic approach. Susceptibility of dislocation generation by boron proximity effects respect to the surface growth orientation is well revealed in such growth geometrical design where several growth orientations have to coexist at the same time. Higher density of type (i) of defects where obtained in closer planes as (111). Finally, the role of the methane concentration in the generation of extended defects will be discussed.Keywords:TEM;Diamond;MPCVD;Defects;Lateral Growth

ACS Style

Fernando Lloret; Daniel Araujo; David Eon; M. Pilar Villar; Etienne Bustarret. Transmission electron microscopy study of defects generated during chemical vapor deposition diamond lateral growth. European Microscopy Congress 2016: Proceedings 2016, 364 -365.

AMA Style

Fernando Lloret, Daniel Araujo, David Eon, M. Pilar Villar, Etienne Bustarret. Transmission electron microscopy study of defects generated during chemical vapor deposition diamond lateral growth. European Microscopy Congress 2016: Proceedings. 2016; ():364-365.

Chicago/Turabian Style

Fernando Lloret; Daniel Araujo; David Eon; M. Pilar Villar; Etienne Bustarret. 2016. "Transmission electron microscopy study of defects generated during chemical vapor deposition diamond lateral growth." European Microscopy Congress 2016: Proceedings , no. : 364-365.

Journal article
Published: 25 November 2015 in Journal of Applied Physics
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Electrical properties of metal-semiconductor (M/SC) and metal/oxide/SC structures built with Zr or ZrO2 deposited on oxygen-terminated surfaces of (001)-oriented diamond films, comprised of a stack of lightly p-doped diamond on a heavily doped layer itself homoepitaxially grown on an Ib substrate, are investigated experimentally and compared to different models. In Schottky barrier diodes, the interfacial oxide layer evidenced by high resolution transmission electron microscopy and electron energy losses spectroscopy before and after annealing, and barrier height inhomogeneities accounts for the measured electrical characteristics until flat bands are reached, in accordance with a model which generalizes that by Tung [Phys. Rev. B 45, 13509 (1992)] and permits to extract physically meaningful parameters of the three kinds of interface: (a) unannealed ones, (b) annealed at 350 °C, (c) annealed at 450 °C with the characteristic barrier heights of 2.2–2.5 V in case (a) while as low as 0.96 V in case (c). Possible models of potential barriers for several metals deposited on well defined oxygen-terminated diamondsurfaces are discussed and compared to experimental data. It is concluded that interface dipoles of several kinds present at these compound interfaces and their chemical evolution due to annealing are the suitable ingredients that are able to account for the Mott-Schottky behavior when the effect of the metal work function is ignored, and to justify the reverted slope observed regarding metal work function, in contrast to the trend always reported for all other metal-semiconductor interfaces.

ACS Style

P. Muret; A. Traoré; A. Maréchal; D. Eon; J. Pernot; J. C. Pinẽro; M. P. Villar; D. Araujo. Potential barrier heights at metal on oxygen-terminated diamond interfaces. Journal of Applied Physics 2015, 118, 204505 .

AMA Style

P. Muret, A. Traoré, A. Maréchal, D. Eon, J. Pernot, J. C. Pinẽro, M. P. Villar, D. Araujo. Potential barrier heights at metal on oxygen-terminated diamond interfaces. Journal of Applied Physics. 2015; 118 (20):204505.

Chicago/Turabian Style

P. Muret; A. Traoré; A. Maréchal; D. Eon; J. Pernot; J. C. Pinẽro; M. P. Villar; D. Araujo. 2015. "Potential barrier heights at metal on oxygen-terminated diamond interfaces." Journal of Applied Physics 118, no. 20: 204505.

Preprint
Published: 20 January 2015
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Electrical properties of metal-semiconductor (M/SC) and metal/oxide/SC structures built with Zr or ZrO\_2 deposited on oxygen-terminated surfaces of (001)-oriented diamond films, comprising a stack of lightly p-doped diamond on a heavily doped layer itself homoepitaxially grown on a Ib substrate, are investigated experimentally and compared to different models. In Schottky barrier diodes, the interfacial oxide layer evidenced by high resolution transmission electron microscopy and electron energy losses spectroscopy before and after annealing, and barrier height inhomogeneities accounts for the measured electrical characteristics until flat bands are reached, in accordance with a model which generalizes that of R.T. Tung [Phys. Rev. B 45, 13509 (1992)] and permits to extract physically meaningful parameters of the three kinds of interface: (a) unannealed ones; (b) annealed at 350{\textdegree}C; (c) annealed at 450{\textdegree}C, with characteristic barrier heights of 2.2-2.5 V in case (a) while as low as 0.96 V in case (c). Possible models of potential barriers for several metals deposited on well defined oxygen-terminated diamond surfaces are discussed and compared to experimental data. It is concluded that interface dipoles of several kinds present at these compound interfaces and their chemical evolution due to annealing are the suitable ingredients able to account for the Mott-Schottky behavior when the effect of the metal work function is ignored, and to justify the reverted slope observed regarding metal work function, in contrast to the trend always reported for all other metal-semiconductor interfaces.

ACS Style

Pierre Muret; Aboulaye Traoré; Aurélien Maréchal; David Eon; Julien Pernot; Jose Carlos Piñero; María Del Pilar Villar; Daniel Araujo. Potential barrier heights at metal on oxygen-terminated diamond interfaces. 2015, 1 .

AMA Style

Pierre Muret, Aboulaye Traoré, Aurélien Maréchal, David Eon, Julien Pernot, Jose Carlos Piñero, María Del Pilar Villar, Daniel Araujo. Potential barrier heights at metal on oxygen-terminated diamond interfaces. . 2015; ():1.

Chicago/Turabian Style

Pierre Muret; Aboulaye Traoré; Aurélien Maréchal; David Eon; Julien Pernot; Jose Carlos Piñero; María Del Pilar Villar; Daniel Araujo. 2015. "Potential barrier heights at metal on oxygen-terminated diamond interfaces." , no. : 1.

Journal article
Published: 18 February 2011 in physica status solidi (c)
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In some diamond‐based semiconducting devices, large variations of doping level are required over short distances. Tools to determine doping level and defects distribution should therefore be developed. The present contribution shows the capabilities of electron microscopy in this field. Focused ion beam (FIB‐dual beam) cross section preparations allowed evaluating doping level in highly boron doped sample with doping transition down to some nm by diffraction contrast mode of transmission electron microscopy (CTEM) and by high angle annular dark field mode of scanning transmission electron microscopy (HAADF‐STEM). The sensibility of the latter is around 1019cm‐3 and, thus, cathodoluminescence (CL) is required for lower doping levels. Cross sectional analysis on FIB prepared lamella allowed to separate the epilayer behaviour from that of the substrate. Mid‐gap centers involving boron, hydrogen and, for some peaks, also nitrogen are revealed. sp2 bonds are also present in the grown epilayer. These transitions make difficult the observation of excitonic recombinations in the cross section configuration. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

ACS Style

Daniel Araujo; M. A. Paz Alegre; Antonio J. Garcia; M. Pilar Villar; Etienne Bustarret; Philipp Achatz; Pierre N. Volpe; Franck Omnès. Cross sectional evaluation of boron doping and defect distribution in homoepitaxial diamond layers. physica status solidi (c) 2011, 8, 1366 -1370.

AMA Style

Daniel Araujo, M. A. Paz Alegre, Antonio J. Garcia, M. Pilar Villar, Etienne Bustarret, Philipp Achatz, Pierre N. Volpe, Franck Omnès. Cross sectional evaluation of boron doping and defect distribution in homoepitaxial diamond layers. physica status solidi (c). 2011; 8 (4):1366-1370.

Chicago/Turabian Style

Daniel Araujo; M. A. Paz Alegre; Antonio J. Garcia; M. Pilar Villar; Etienne Bustarret; Philipp Achatz; Pierre N. Volpe; Franck Omnès. 2011. "Cross sectional evaluation of boron doping and defect distribution in homoepitaxial diamond layers." physica status solidi (c) 8, no. 4: 1366-1370.

Journal article
Published: 30 August 2010 in physica status solidi (a)
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A transmission electron microscopy (TEM) study, comparing homoepitaxial diamond layers grown on different substrate surface preparation states and crystallographic orientation is presented. Quality of epilayers grown on {111} cleaved surface and on {001} polished one is evaluated in terms of crystalline defects. Focused ion beam (FIB‐dual beam) sample preparations are observed by TEM using the {111}, {400} and {022} reflections of the [011] pole. Burgers vector analysis allowed to conclude the presence of 60° dislocations oriented along all the different 〈110〉 directions in the cleaved sample, while no dislocations are observed on the polished one. A complete dislocation analysis is performed for that sample. The presence of dislocations in an undoped (i.e. fully lattice matched) epilayer is surprising; and is probably induced by atomic steps, generated by the cleavage process. This notes down the importance of the substrate if high quality diamond epilayers want to be grown.

ACS Style

D. Araújo; E. Bustarret; A. Tajani; P. Achatz; M. Gutiérrez; A. J. García; M. P. Villar. Comparison of the crystalline quality of homoepitaxially grown CVD diamond layer on cleaved and polished substrates. physica status solidi (a) 2010, 207, 2023 -2028.

AMA Style

D. Araújo, E. Bustarret, A. Tajani, P. Achatz, M. Gutiérrez, A. J. García, M. P. Villar. Comparison of the crystalline quality of homoepitaxially grown CVD diamond layer on cleaved and polished substrates. physica status solidi (a). 2010; 207 (9):2023-2028.

Chicago/Turabian Style

D. Araújo; E. Bustarret; A. Tajani; P. Achatz; M. Gutiérrez; A. J. García; M. P. Villar. 2010. "Comparison of the crystalline quality of homoepitaxially grown CVD diamond layer on cleaved and polished substrates." physica status solidi (a) 207, no. 9: 2023-2028.

Book chapter
Published: 15 May 2005 in Materials Science Forum
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This identifier is not currently attached to any content. Of course, DOIs can’t actually ever be deleted (they’re persistent!), but sometimes our members create DOIs in error. We do have a process to approximate deletion which we follow only in rare cases where: a) the DOI has been genuinely created in error; and most crucially, if the DOI has never been published anywhere online or in print and never otherwise distributed to or communicated with anyone (authors, readers, reviewers, etc.

ACS Style

David Méndez; A. Aouni; Daniel Araujo; Etienne Bustarret; Gabriel Ferro; Yves Monteil. Analysis of SiC Islands Formation during First Steps of Si Carbonization Process. Materials Science Forum 2005, 555 -558.

AMA Style

David Méndez, A. Aouni, Daniel Araujo, Etienne Bustarret, Gabriel Ferro, Yves Monteil. Analysis of SiC Islands Formation during First Steps of Si Carbonization Process. Materials Science Forum. 2005; ():555-558.

Chicago/Turabian Style

David Méndez; A. Aouni; Daniel Araujo; Etienne Bustarret; Gabriel Ferro; Yves Monteil. 2005. "Analysis of SiC Islands Formation during First Steps of Si Carbonization Process." Materials Science Forum , no. : 555-558.

Book chapter
Published: 15 May 2005 in Materials Science Forum
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This identifier is not currently attached to any content. Of course, DOIs can’t actually ever be deleted (they’re persistent!), but sometimes our members create DOIs in error. We do have a process to approximate deletion which we follow only in rare cases where: a) the DOI has been genuinely created in error; and most crucially, if the DOI has never been published anywhere online or in print and never otherwise distributed to or communicated with anyone (authors, readers, reviewers, etc.

ACS Style

David Méndez; A. Aouni; Daniel Araujo; Gabriel Ferro; Yves Monteil; Etienne Bustarret. Planar Defects, Voids and their Relationship in 3C-SiC Layers. Materials Science Forum 2005, 189 -192.

AMA Style

David Méndez, A. Aouni, Daniel Araujo, Gabriel Ferro, Yves Monteil, Etienne Bustarret. Planar Defects, Voids and their Relationship in 3C-SiC Layers. Materials Science Forum. 2005; ():189-192.

Chicago/Turabian Style

David Méndez; A. Aouni; Daniel Araujo; Gabriel Ferro; Yves Monteil; Etienne Bustarret. 2005. "Planar Defects, Voids and their Relationship in 3C-SiC Layers." Materials Science Forum , no. : 189-192.

Journal article
Published: 01 May 2005 in Materials Science Forum
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The effect of the temperature at which the carbon source is introduced in the reactor on the early stages of the carbonization process is analyzed here. Three samples heated up to 1150°C with propane introduction temperatures (Tintro) of 725, 1030 and 1100°C are analyzed by transmission electron microscopy and attenuated total reflectance. The size of the SiC nuclei increases with Tintro. There is also an effect on the strain of the resulting carbonization layer. The electron diffraction pattern of the sample with the highest Tintro shows a fully relaxed 3C-SiC layer, while no evidence of SiC relaxation is present in low Tintro samples where the SiC islands seems to be pseudomorphic.

ACS Style

David Méndez; A. Aouni; Daniel Araújo; Etienne Bustarret; Gabriel Ferro; Yves Monteil. Analysis of SiC Islands Formation during First Steps of Si Carbonization Process. Materials Science Forum 2005, 483-485, 555 -558.

AMA Style

David Méndez, A. Aouni, Daniel Araújo, Etienne Bustarret, Gabriel Ferro, Yves Monteil. Analysis of SiC Islands Formation during First Steps of Si Carbonization Process. Materials Science Forum. 2005; 483-485 ():555-558.

Chicago/Turabian Style

David Méndez; A. Aouni; Daniel Araújo; Etienne Bustarret; Gabriel Ferro; Yves Monteil. 2005. "Analysis of SiC Islands Formation during First Steps of Si Carbonization Process." Materials Science Forum 483-485, no. : 555-558.

Journal article
Published: 01 May 2005 in Materials Science Forum
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One of the problems with Si(001)/3C-SiC templates is that they involve highly defective interfaces due to the presence of misfit dislocations, voids and planar defects that degrade the SiC layer quality. A way to accommodate the high lattice mismatch between these materials and reduce the voids density is to carbonize the Si substrate before the epitaxial growth. In this contribution an alternative way to reduce planar defects density is presented by analyzing the relationship between planar defects and voids. Planar view and cross section transmission electron microscopy micrographs show a diminution of planar defects in the regions surrounding the voids. Due to the lower elastic energy over the voids and/or to a lateral growth in these regions, the generation of planar defects is partially deactivated, improving locally the crystalline quality of the SiC layer. The introduction of such cavities can be thus seen as a new parameter of Si/SiC templates design.

ACS Style

David Méndez; A. Aouni; Daniel Araújo; Gabriel Ferro; Yves Monteil; Etienne Bustarret. Planar Defects, Voids and their Relationship in 3C-SiC Layers. Materials Science Forum 2005, 483-485, 189 -192.

AMA Style

David Méndez, A. Aouni, Daniel Araújo, Gabriel Ferro, Yves Monteil, Etienne Bustarret. Planar Defects, Voids and their Relationship in 3C-SiC Layers. Materials Science Forum. 2005; 483-485 ():189-192.

Chicago/Turabian Style

David Méndez; A. Aouni; Daniel Araújo; Gabriel Ferro; Yves Monteil; Etienne Bustarret. 2005. "Planar Defects, Voids and their Relationship in 3C-SiC Layers." Materials Science Forum 483-485, no. : 189-192.

Journal article
Published: 01 March 2005 in physica status solidi (c)
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ACS Style

D. Araujo; M. Kadri; M. Wade; E. Bustarret; A. Deneuville. Excitonic emission and N- and B-incorporation in homoepitaxial CVD-grown diamond investigated by cathodoluminescence. physica status solidi (c) 2005, 2, 1336 -1341.

AMA Style

D. Araujo, M. Kadri, M. Wade, E. Bustarret, A. Deneuville. Excitonic emission and N- and B-incorporation in homoepitaxial CVD-grown diamond investigated by cathodoluminescence. physica status solidi (c). 2005; 2 (4):1336-1341.

Chicago/Turabian Style

D. Araujo; M. Kadri; M. Wade; E. Bustarret; A. Deneuville. 2005. "Excitonic emission and N- and B-incorporation in homoepitaxial CVD-grown diamond investigated by cathodoluminescence." physica status solidi (c) 2, no. 4: 1336-1341.