Progress in power electronic devices is currently accepted through the use of wide bandgap materials (WBG). Among them, diamond is the material with the most promising characteristics in terms of breakdown voltage, on-resistance, thermal conductance, or carrier mobility. However, it is also the one with the greatest difficulties in carrying out the device technology as a result of its very high mechanical hardness and smaller size of substrates. As a result, diamond is still not considered a reference material for power electronic devices despite its superior Baliga’s figure of merit with respect to other WBG materials. This review paper will give a brief overview of some scientific and technological aspects related to the current state of the main diamond technology aspects. It will report the recent key issues related to crystal growth, characterization techniques, and, in particular, the importance of surface states aspects, fabrication processes, and device fabrication. Finally, the advantages and disadvantages of diamond devices with respect to other WBG materials are also discussed.

Defects induced by boron doping in diamond layers were studied by transmission electron microscopy. The existence of a critical boron doping level above which defects are generated is reported. This level is found to be dependent on the CH4/H2 molar ratios and on growth directions. The critical boron concentration lied in the 6.5–17.0 × 1020at/cm3 range in the ⟨111⟩ direction and at 3.2 × 1021 at/cm3 for the ⟨001⟩ one. Strain related effects induced by the doping are shown not to be responsible. From the location of dislocations and their Burger vectors, a model is proposed, together with their generation mechanism.

Diamond, as the densest allotrope of carbon, displays a range of exemplary material properties that are attractive from a device perspective. Despite diamond displaying high carbon-carbon bond strength, ultrashort (femtosecond) pulse laser radiation can provide sufficient energy for highly localized internal breakdown of the diamond lattice. The less-dense carbon structures generated on lattice breakdown are subject to significant pressure from the surrounding diamond matrix, leading to highly unusual formation conditions. By tailoring the laser dose delivered to the diamond, it is shown that it is possible to create continuously modified internal tracks with varying electrical conduction properties. In addition to the widely reported conducting tracks, conditions leading to semiconducting and insulating written tracks have been identified. High-resolution transmission electron microscopy (HRTEM) is used to visualize the structural transformations taking place and provide insight into the different conduction regimes. The HRTEM reveals a highly diverse range of nanocarbon structures are generated by the laser irradiation, including many signatures for different so-called diaphite complexes, which have been seen in meteorite samples and seem to mediate the laser-induced breakdown of the diamond. This work offers insight into possible formation methods for the diamond and related nanocarbon phases found in meteorites.