In this paper, a universal asynchronous receiver and transmitter (UART) are described, which is basically a serial data transmission protocol used in digital circuit applications. The architecture of the UART transmitter has a baud rate generator, parity generator, transmitter finite state machine (FSM) and parallel in serial out register (PISO). UART receiver has a baud rate generator, negative edge detector, parity checker, receiver finite state machine (FSM) and serial in parallel out (SIPO) register. The baud rate generator of both transmitter and receiver is the same, so the baud rate of transmitter/receiver is the same. Baud rate generator is the same as the frequency divider circuit. The data frame of the UART transmitter is 1 start bit, 8 transmits data bits, 1 parity bit and 1 stop bit. The baud rate of the transmitter and receiver is 4 Mbps using the system clock of 64 MHz’s. Implementation, simulation, and synthesis is done Xilinx Vivado 2016.2 version tool. The design is verified using simulated waveform and synthesized on the FPGA Zed board.

This paper examines the performance of a Gate-Engineered Gate-All-Around Charge Plasma Nanowire Field Effect Transistor (GAA-DMG-GS-CP NW-FET) and the implementation of a common source (CS) amplifier circuit. The proposed GAA-DMG-GS-CP NW-FET incorporates dual-material gate (DMG) and gate stack (GS) as gate engineering techniques and its analog/RF performance parameters are compared to those of the Gate-All-Around Single-Material Gate Charge Plasma Nanowire Field Effect Transistor (GAA-SMG-CP NW-FET) device. Both Gate-All-Around (GAA) devices are designed using the Silvaco TCAD tool. GAA structures have demonstrated good gate control because the gate holds the channel, which is an inherent advantage for both devices discussed herein. The charge plasma dopingless technique is used, in which the source and drain regions are formed using metal contacts and necessary work functions rather than doping. This dopingless technique eliminates the need for doping, reducing fluctuations caused by random dopants and lowering the device’s thermal budget. Gate engineering techniques such as DMG and GS significantly improved the current characteristics which played a crucial role in obtaining maximum gain for circuit designs. The lookup table (LUT) approach is used in the implementation of the CS amplifier circuit with the proposed device. The transient response of the circuit is analyzed with both the device structures where the gain achieved for the CS amplifier circuit using the proposed GAA-DMG-GS-CP NW-FET is 15.06 dB. The superior performance showcased by the proposed GAA-DMG-GS-CP NW-FET device with analog, RF and circuit analysis proves its strong candidature for future nanoscale and low-power applications.

With a very short time frame in mind we were commissioned to build a service solution that encompassed over 430 requirements. Given expertise, skills, time and budget constraints we had to search for resources around the world and assembled a team of more than 40 people in 7 locations across 6 different time zones. We chose state of the art architecture and development paradigms such as Service Oriented Architecture (SOA) and iterative development to facilitate the service capabilities between components and teams and to continuously refine our approach from iteration to iteration. In this paper we identify some of the challenges we faced and describe how we addressed them in subsequent iterations. The aggregate of our improvements constitutes a set of best practices that we recommend for future engagements of this type and suggestions for new tooling to support these activities.