There is always a need for low-power, area-efficient VLSI (Very Large-Scale Integration) design and this need is increasing day by day. However, conventional design methods based on Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) devices and Complementary Metal-Oxide-Semiconductor Transistor (CMOS) technology cannot meet the performance requirements. The memristor, as a promising computing and memory integration device, offers a new research idea for conventional logic circuit structure and architecture innovation, given its non-volatility, scalability, low power consumption, fast switching speed, etc. This paper proposes a brief overview of the characteristics and current status of memristor-based logic circuits and analyzes their applications in numerical expression and memory. The benefits and drawbacks of various analog logic circuit structures are summarized and compared. In addition, some solution strategies for these issues are presented. Finally, this paper offers prospects for the applications of memristors in the logic implementation of large-scale memristor arrays, the novel structure of in-memory computing, and neural network computing.

The von Neumann architecture faces a “memory wall” problem due to the physical separation of memory and processor, posing major challenges to energy efficiency and latency in the era of artificial intelligence. To overcome these bottlenecks, artificial synaptic devices inspired by biological systems have emerged as an important research direction. By integrating sensing and computing functions at the device level, these architectures provide a promising approach for the efficient processing of natural physical signals. Supported by advances in functional materials and artificial neural network (ANN) algorithms, artificial synaptic devices are capable of perceiving and processing various external stimuli, showing strong potential for applications in intelligent electronic skins, robotics, and edge computing. This review provides a comprehensive overview of recent advances in artificial synaptic devices, with particular emphasis on tactile and visual sensing applications. We discuss representative device types and operating mechanisms, analyze critical challenges from the perspectives of material engineering and functional integration, and further summarize potential solutions and future trends toward multimodal sensory–memory–computing systems.

To meet the requirements of wide-temperature reliability and fast transient response in power management ICs for automotive, aerospace, and industrial applications, this paper presents a fast-response low-dropout regulator (LDO) based on a 0.18 μm high-temperature SOI process. Benefiting from the buried oxide isolation structure of the SOI technology, leakage current and parasitic effects under high-temperature conditions are effectively suppressed. The proposed LDO employs an NMOS power transistor, with an on-chip charge pump used to enhance the gate driving capability. In addition, a triple-loop regulation scheme consisting of a main negative feedback loop, an auxiliary positive feedback loop, and a current-mode feedback loop is adopted to improve transient performance and enhance loop stability. The fabricated chip occupies an area of 2840 μm × 1490 μm and supports an input voltage range of 3–5.5 V and an output voltage range of 1.2–3.3 V. Over a temperature range of −55 °C to 175 °C, the LDO can deliver a maximum load current of 400 mA. At 175 °C, the measured overshoot and undershoot voltages are 64 mV and 94 mV, respectively, with a maximum recovery time of 336 μs. Moreover, the power supply rejection ratio (PSRR) reaches 56.8 dB at 100 Hz. Experimental results demonstrate that the proposed LDO exhibits excellent high-temperature adaptability, strong load-driving capability, and superior transient response performance.