There is always a need for low-power, area-efficient VLSI (Very Large-Scale Integration) design and this need is increasing day by day. However, conventional design methods based on Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) devices and Complementary Metal-Oxide-Semiconductor Transistor (CMOS) technology cannot meet the performance requirements. The memristor, as a promising computing and memory integration device, offers a new research idea for conventional logic circuit structure and architecture innovation, given its non-volatility, scalability, low power consumption, fast switching speed, etc. This paper proposes a brief overview of the characteristics and current status of memristor-based logic circuits and analyzes their applications in numerical expression and memory. The benefits and drawbacks of various analog logic circuit structures are summarized and compared. In addition, some solution strategies for these issues are presented. Finally, this paper offers prospects for the applications of memristors in the logic implementation of large-scale memristor arrays, the novel structure of in-memory computing, and neural network computing.

As a module of the internet of things (IOT) information security system, the true random number generator (TRNG) plays an important role in overall performance. In this paper, a low-power TRNG based on dual oscillators is proposed. Two high-frequency cross-coupled oscillators are used to generate high-jitter clock signals, and then the SR latch with power supply below standard power supply voltage is adopted to process the oscillator output to maintain its metastability and increase jitter. The circuit is realized by an SMIC 180 nm 1P6M mixed-signal process. The experimental results show that when power supply voltage is 1.8 V, the circuit outputs a random number bit rate of 200 kb/s, the core area is 0.0039 mm², and the power consumption is only 36 µw. The output random sequences can pass the NIST SP 800-22 test.

Recently infrared photodetectors based on low-dimensional semiconductors have developed rapidly. However, due to its poor light absorption and incompatibility with traditional silicon-based readout circuit processes, the sensitivity and integration of such photodetectors are limited. In this work, we proposes a 64 × 64 quantum dot short-wavelength infrared (SWIR) photodetector composed of carbon nanotube thin film transistor (CNT TFT) and silicon-based ROIC. CNT TFT's gate is constructed by PbS colloidal quantum dots (PbS CQDs) which improve the absorption rate of infrared light. The generated photovoltage is amplified and converted in situ by CNT TFT. Notably, under infrared radiation of 1300 nm, the noise equivalent current reach up to 1.25*10⁻¹³A/Hz^1/2. At a drain-source bias (Vds)= -0.1 V. The device exhibits detectivity of 5.6*10¹³ Jones and a fast response of 0.57 ms. The silicon-based ROIC is implemented by CMOS 0.18um process, with a power supply voltage of 1.8 V. It mainly includes a programmable integrator, a sampling and holding circuit, and a 10bit/2.5 MHz successive approximation analog-to-digital converter (SAR ADC). The programmable integrator has four levels of integral gain to meet the application requirements of different infrared light intensities. The experiment results show that the imaging function of the overall photodetector is correct, laying the foundation for the development of carbon-silicon based heterojunction integrated photodetector in the future.

This paper presents an RF switch chip with a wide operating bandwidth from 6 to 18 GHz, designed for RF front-end applications in mobile communications. A series-parallel topology combined with a stacked transistor structure was employed to improve power handling while maintaining low insertion loss and high isolation. To further optimize isolation and return loss, LC resonant circuits were introduced by utilizing off-state transistors as capacitive elements. Compared to existing designs, the proposed switch achieved an improved trade-off between bandwidth, power capacity, and port performance. Measurement results showed insertion loss below 1.917 dB, isolation above 38.839 dB, return loss better than 13.075 dB, and 1 dB input compression point above 32 dBm at 12 GHz, confirming the effectiveness and novelty of the broadband design.