Two widely used atomic layer deposition precursors, Tetrakis (dimethylamido) titanium (TDMA-Ti) and titanium tetrachloride (TiCl₄), were investigated for use in the deposition of TiOx-based thin films as a passivating contact material for solar cells. This study revealed that both precursors are suited to similar deposition temperatures (150 °C). Post-deposition annealing plays a major role in optimising the titanium oxide (TiO_x) film passivation properties, improving minority carrier lifetime (τ_eff) by more than 200 µs. Aluminium oxide deposited together with titanium oxide (AlO_y/TiO_x) reduced the sheet resistance by 40% compared with pure TiO_x. It was also revealed that the passivation quality of the (AlO_y/TiO_x) stack depends on the precursor and ratio of AlO_y to TiO_x deposition cycles.

The paper consider oxygen contamination of HCPA ALD grown GaN films under an air conditioning and during different time duration. High resolution XPS analysis of HCPA ALD grown GaN films after diluted 1:10 HF(41 %): H₂O and undiluted HF (41 %) influence on oxygen impurities was investigated. Lesser oxygen impurities have been observed. Better resistivity to oxygen atoms of GaN thin films after diluted HF solution treatment was achieved compared to undiluted HF treatment and without treatment.

This work is dedicated to developing a method of combined surface morphology- and crystallographic analysis for crystalline silicon. To demonstrate the applicability of the method, a series of chemical operations, such as polishing and texturing, were applied to multi-crystalline silicon samples. The samples were pre- and post-analysed with WLI and Laue techniques, and the experimental data allowed construction of maps for crystal orientation to etching rate dependency. The study illustrates the strengths of the combinatory technique as an alternative to existing techniques such as atom force microscopy (AFM) and electron backscatter diffraction (EBSD).•Combination of LAUE tool and white light interferometry techniques.•Alternative time-effective method to EBSD.•Analysis of surface morphology and crystallographic properties for chemical processing.