The power conversion efficiency of inorganic–organic hybrid lead halide perovskite solar cells (PSCs) is approaching that of those made from single crystalline silicon; however, they still experience problems such as hysteresis and photo/electrical‐field‐induced degradation. Evidences consistently show that ionic migration is critical for these detrimental behaviors, but direct in‐situ studies are still lacking to elucidate the respective kinetics. Three different PSCs incorporating phenyl‐C61‐butyric acid methyl ester (PCBM) and a polymerized form (PPCBM) is fabricated to clarify the function of fullerenes towards ionic migration in perovskites: 1) single perovskite layer, 2) perovskite/PCBM bilayer, 3) perovskite/PPCBM bilayer, where the fullerene molecules are covalently linked to a polymer backbone impeding fullerene inter‐diffusion. By employing wide‐field photoluminescence imaging microscopy, the migration of iodine ions/vacancies under an external electrical field is studied. The polymerized PPCBM layer barely suppresses ionic migration, whereas PCBM readily does. Temperature‐dependent chronoamperometric measurements demonstrate the reduction of activation energy with the aid of PCBM and X‐ray photoemission spectroscopy (XPS) measurements show that PCBM molecules are viable to diffuse into the perovskite layer and passivate iodine related defects. This passivation significantly reduces iodine ions/vacancies, leading to a reduction of built‐in field modulation and interfacial barriers.

Here we investigate the two-step MAPbI ₃ thin film formation during spin coating by simultaneous in situ absorption and photoluminescence spectroscopy.

Organolead halide perovskite solar cells (PSCs) have generated extensive attention recently with power conversion efficiency (PCE) exceeding 23%. However, these PSCs exhibit photoinduced instability in the course of their current-voltage measurements. In this work, we study the light-induced behavior in CH₃NH₃PbI_3−xCl_x films in situ, by employing wide-field photoluminescence (PL) microscopy to obtain both the spatially and temporally resolved PL images simultaneously. Along with the increase in the PL intensity under continuous illumination, some areas render PL inactive. By characterizing the excitation energy dependent long-time PL decay behavior, we suggest that the PL quenching can be ascribed to a localized accumulation of iodide ions driven by the optical field. This ion localization leads to an enhancement of non-radiative recombination. The appearance of the PL inactive areas in the perovskite film impedes its photovoltaic device performance approaching the theoretical maximum PCE. Therefore, the herein presented real-time investigation of the light soaking of perovskite films is a versatile and adaptable method providing more details to improve the performance of PSCs.

In recent years, because of stringent needs in the fabrication of silicon carbide (SiC) power devices, laser annealing has been introduced to achieve local ohmic contact. In this paper, the laser annealing research for the ohmic contact process of SiC power devices is reviewed, which is mainly divided into four aspects: laser process mechanism, ohmic contact electrode materials, and substrate materials. The effect of laser parameters on ohmic contact and the annealing process on SiC diode devices is also reviewed. Progress of other substrate materials, namely 6H-SiC and semi-insulating 4H-SiC-based devices with laser annealed ohmic contacts, is also briefly discussed, in which formation of semi-insulating SiC ohmic contacts is derived from laser irradiation at the interface to produce 3C-SiC. Some experiment results have been shown in the passage, such as XRD, SEM, TEM, etc. In the review, it points out that the direction of application and development of the laser annealing process for improving the ohmic contact of SiC power devices is highly encouraging.

With more than thirty years of research and development until commercialization, performance, reliability, and robustness of silicon carbide (SiC) based devices have been improved significantly due to drastic reduction in crystal defects from the well-controlled processes of crystal growth and device fabrication. It is crucial to investigate the effects of SiC crystal defects on the electrical characteristics of devices. Here, an up-to-date development of the correlation between crystal defects of SiC with electrical performance of the devices has been reviewed. The effect of defects on the electrical parameters of the device and the failure mechanism are discussed, and the development of SiC in recent years is prospected.