In this paper, we investigated the optical and thermo-optical properties of a-SiN_x:H layers obtained using the PECVD technique. SiN_x:H layers with different refractive indices were obtained from silane and ammonia as precursor gases. Surface morphology and chemical composition studies were investigated using atomic force microscopy, scanning electron microscopy, Fourier transform infrared spectroscopy and energy dispersive spectrometry methods. Spectroscopic ellipsometry was used to determine the optical indexes, thicknesses and optical bandgap of the films. The main purpose was to identify the thermo-optical characteristics of layers with different refractive indexes. Thermo-optical studies were performed to determine the temperature hysteresis of optical parameters. These measurements showed that after annealing up to 300 °C and subsequent cooling, the value of optical parameters returned to the initial values.

The aim of this work was the determination of the basic optical parameters and electronic structure of conjugated polymer films by two commonly used techniques—spectrophotometry and ellipsometry. Poly(3-hexylthiophene (P3HT) and poly(3-octylthiophene (P3OT) conductive polymers films deposited on a glass substrate by the spin-coating technique showed very comparable surface structures composed of grains of similar sizes and shapes. X-ray tests confirmed that the polythiophene layers are amorphous, which confirmed the correctness of the choice of the optical models used. Selected optical models (Lorentz, Tauc–Lorentz and Cody–Lorentz) have been applied in order to determine the thickness, and optical parameters such as refractive index and extinction coefficient, absolute absorption and electronic parameters (energy gap E_g, amplitude A and broadening B). Spectral absorption determined from spectrophotometric measurement is similar to the absorption spectrum obtained from the ellipsometry method with the application of oscillator models.

In this work, the results of ellipsometric studies of thin films of broadband oxides (ZnO, TiO₂, ZrO₂) and broadband oxides doped with Al₂O₃ (Al₂O₃–ZnO, Al₂O₃–TiO₂, Al₂O₃–ZrO₂) are presented. All layers have been produced using the atomic layer deposition method. Ellipsometric studies were performed in the wavelength range of 193–1690 nm. Sellmeier and Cauchy models were used to describe the optical properties of the tested layers. Dispersion dependencies of refractive indices were determined for thin layers of broadband oxides on silicon substrates, and then for layers of Al₂O₃ admixture. The EDX investigations enabled estimation of the composition of the alloys. The Bruggeman effective medium approximation (EMA) model was used to determine the theoretical dependencies of the dispersion refractive indices of the studied alloys. The refractive index values determined using the Bruggeman EMA model are in good agreement with the values determined from the ellipsometric measurements. The doping of thin layers of ZnO, ZrO₂ and TiO₂ with Al₂O₃ enables the creation of anti-reflective layers and filters with a specific refractive index.

In this study, ellipsometry was used to study thin films on organic photovoltaic cells. The investigated cells contained a traditional donor-acceptor structure as the active layer in the form of a bulk heterojunction. The tested photovoltaic cells had the following structure: ITO/poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS)/poly (3-hexylthiophene-2-diyl) (P3HT) + 1,3-phenyl-6-fluorine-1H-pyrazolo[3,4-b]quinoline (PQ)/Al. The active layer was a blend of P3HT and a compound from the pyrazoloquinoline group with a low molecular weight marked as PQ. The ITO film acted as the electrode collecting the holes. The PEDOT:PSS layer was used to smoothen the ITO film and facilitate the transport of holes. The layers were tested using spectroscopic ellipsometry (SE), and the spectral dispersion of optical constants was determined in a wavelength range of 300–1700 nm. The appropriate theoretical models were then fitted to the SE measurement results. This information was used to determine the thickness of the layers and the dispersion relation of refractive and extinction indices. The temperature dependence of refractive indices of polythiophene layers during the heating and cooling process is also presented for a temperature range of 25–110 °C. Additionally, the authors calculated thermo-optic and thermal expansion coefficients and characterized the conditions of thermal stability of the layers and reversibility issues in thermal processes.

The paper presents the results of research on the surface topography and electrical properties of ITO thin films deposited by PVD for applications in silicon photovoltaic cells. The surface condition and chemical composition were characterized using a scanning electron microscope and the thickness and optical constants were measured using a spectroscopic ellipsometer. To compare the impact of the preparation process on the properties of layers, deposition was carried out at three different temperatures: 25, 200, and 400◦C. As the temperature increased, the surface roughness changed, which correlated with the results of structural tests. The crystallite size increased from 11 to 46 nm. This, in turn, reduced the surface resistance. The electrical properties were measured using a four-point probe method and then the prepared solar cells containing ITO thin films in their structure were examined. By controlling the deposition parameters, the surface resistance of the deposited layer (26 Ohm/✷) and the efficiency of the prepared solar cells (18.91%) were optimized. Currently, ITO has the best properties for use in optoelectronics and photovoltaics among the known TCO layers. The magnetron sputtering method is widely used in many industries. Therefore, the authors predict that TCO layers can replace currently used antireflection layers and reduce the number and dimensions of front metal contacts in solar cells.