In In this study, the optical properties of magnesium-aluminate spinel were examined after being irradiated with 220 MeV Xe ions. The research aimed to simulate the impact of nuclear fuel fission fragments on the material. The following measurements were taken during the experiments: transmission spectra in the IR region (190–7000) nm, optical absorption spectra in the range (1.2–6.5) eV, and Raman spectra were measured along the depth of ion penetration from the surface to 30 µm. A peak with a broad shape at approximately 5.3 eV can be observed in the optical absorption spectrum of irradiated spinel crystals. This band is linked to the electronic color centers of F⁺ and F. Meanwhile, the band with a maximum at ~(3–4) eV is attributed to hole color centers. Apart from the typical Raman modes of an unirradiated crystal, additional modes, A1g* (720 cm⁻¹), and Eg* (385 cm⁻¹), manifested mainly as an asymmetric shoulder of the main Eg mode, are also observed. In addition, the Raman spectroscopy method showed that the greatest disordering of crystallinity occurs in the near-surface layer up to 4 μm thick. At the same time, Raman scattering spectroscopy is sensitive to structural changes almost up to the simulated value of the modified layer, which is an excellent express method for certifying the structural properties of crystals modified by swift heavy ions.

Samples of ZrO₂ ceramics with different concentrations of impurity titanium ions were synthesized by mixing zirconium and titanium oxide powders in different mass ratios. The X-ray diffraction analysis was used to determine the phase composition, lattice parameters, and crystallite size of the ceramics with varying dopant concentrations. Upon irradiation of the samples with 220 MeV Xe ions to a fluence of 10¹⁰ ions/cm², a decrease in the intensity of the pulsed cathodoluminescence band at 2.5 eV was observed. Additionally, ion irradiation resulted in the emergence of a new thermoluminescence peak at 450–650 K attributed to radiation-induced traps of charge carriers. Further analysis revealed that the thermoluminescence curves of samples irradiated with electrons and ions comprise a superposition of several elementary peaks. Notably, a complex non-monotonic dependence of cathodo- and thermoluminescence intensity on titanium concentration was observed, suggesting the influence of concentration quenching and the presence of tunneling transitions.

Electrochemical deposition into a prepared SiO₂/Si-p ion track template was used to make orthorhombic SnO₂ vertical nanowires (NWs) for this study. As a result, a SnO₂-NWs/SiO₂/Si nanoheterostructure with an orthorhombic crystal structure of SnO₂ nanowires was obtained. Photoluminescence excited by light with a wavelength of 240 nm has a low intensity, arising mainly due to defects such as oxygen vacancies and interstitial tin or tin with damaged bonds. The current–voltage characteristic measurement showed that the SnO₂-NWs/SiO₂/Si nanoheterostructure made this way has many p-n junctions.

The recovery of radiation damage induced by 231-MeV xenon ions with varying fluence (from 5 × 10¹¹ to 2 × 10¹⁴ cm⁻²) in α-Al₂O₃ (corundum) single crystals has been studied by means of isochronal thermal annealing of radiation-induced optical absorption (RIOA). The integral of elementary Gaussians (product of RIOA spectrum decomposition) OK has been considered as a concentration measure of relevant oxygen-related Frenkel defects (neutral and charged interstitial-vacancy pairs, F-H, F⁺-H⁻). The annealing kinetics of these four ion-induced point lattice defects has been modelled in terms of diffusion-controlled bimolecular recombination reactions and compared with those carried out earlier for the case of corundum irradiation by fast neutrons. The changes in the parameters of interstitial (mobile component in the recombination process) annealing kinetics—activation energy E and pre-exponential factor X—in ion-irradiated crystals are considered.

Samples of ZrO2 ceramics with different concentrations of impurity titanium ions were synthesized by mixing powders of zirconium and titanium oxides in various mass ratios. The phase composition and surface morphology of the studied ceramics were determined by X-ray phase analysis and scanning electron microscopy. It was found that irradiation of samples with xenon ions (220 MeV) with fluences 1010 and 1012 ion/cm2 leads to a decrease in the intensity of the pulse cathodoluminescence band at 2.5 eV. It is shown that ion irradiation causes the appearance of a new peak of thermoluminescence at 450-650 K of a non-elementary form associated with radiation-induced traps of charge carriers. In contrast to electron irradiation, an increase in the fluence of ions leads to a decrease in the intensity of this peak. In contrast to electron irradiation, an increase in the fluence of ions leads to a decrease in the intensity of this peak. A complex nonmonotonic dependence of the cathode and thermoluminescence intensity on the dopant concentration was found, which may be due to the effects of concentration quenching and aggregation of defective centers.

The recovery of radiation damage induced by 231-MeV xenon ions with varying fluence (from 5´1011 and 2´1014 cm-2) in a-Al2O3 (corundum) single crystals has been studied by means of isochronal thermal annealing of radiation-induced optical absorption (RIOA). The integral of elementary Gaussians (product of RIOA spectrum decomposition) has been considered as concentration measure of relevant oxygen-related Frenkel defects (neutral and charged interstitial-vacancy pairs, F-H, F+-H-). The annealing kinetics of these four ion-induced point lattice defects has been modelled in terms of diffusion-controlled bimolecular recombination reactions and compared with those earlier done for the case of corundum irradiation by fast neutrons. The changes in the parameters of interstitial (mobile component in the recombination process) annealing kinetics - activation energy E and pre-exponential factor X - in ion-irradiated crystals are considered.