The higher voltage blocking capability and faster switching speed of SiC MOSFETs has the potential to replace Si IGBTs in medium/low-voltage and high-power applications. In this paper, a state-of-the-art 325A, 1700V SiC MOSFET module has been fully characterized under various load currents, bus voltages and gate resistances to reveal their switching capability. Meanwhile, Si IGBT modules with similar power ratings are also tested under the same conditions. From the test results, several interesting points have been obtained: for example, the over-shoot current of the SiC MOSFET module is greater than that of the Si IGBT module when the load current is high although a SiC Schottky diode is used in the SiC MOSFET module and a PIN diode is used in the IGBT module and a circuit model to explain this phenomenon has been proposed in this paper; the induced negative gate voltage due to the complementary device turn-off (cross-talk effect) is more harmful to the SiC MOSFET module than the induced positive gate voltage during turn-on when the gate off-voltage is -6V. An accurate power loss model which is suitable for a three-phase two-level converter based on SiC MOSFET modules been presented and verified in this paper.

Power devices based on wide-bandgap (WBG) material such as silicon-carbide (SiC) can operate at higher switching speeds, higher voltages and higher temperatures compared to those based on silicon (Si) material. This paper highlights some opportunities brought by SiC devices in existing and emerging applications in terms of efficiency and power density improvement. While the opportunities are clear, there are also design challenges that must be met in order to realize their full potential. For example, the fast switching speeds and high dv/dt of SiC devices can cause increased electromagnetic interference (EMI), current overshoot, cross-talk effect and have a negative impact on loads such as motors. This paper presents several potential solutions to tackle the application challenges and to fully exploit the superior characteristics of SiC devices and converters while attenuating their negative side-effects. This paper provides an overview of recent SiC device research and development activities based on the academic literature, work carried out by the authors and collaborators as well as input from industry. It aims to provide benchmark results and a timely and useful reference for power electronics engineers, to accelerate the adoption and deployment of SiC devices and converters.

The emergence of fast-switching wide-bandgap (GaN, SiC) power electronics devices has enabled motor drive systems to achieve high efficiency, power density, control bandwidth and high-level of integration. However, the fast-switching speed and high switching frequency result in an increased level of motor overvoltage at both motor terminals and stator neutral. This overvoltage increases the stress across the motor winding insulation and bearings. This paper investigates three types of motor overvoltages, i.e., differential mode (DM) (phase-to-phase) motor terminal overvoltage, common mode (CM) (phase-to-ground) motor terminal overvoltage and CM stator neutral overvoltage (motor neutral to ground). Both the high switching speed (high dv/dt) effect and the high switching frequency effect on the motor overvoltage are investigated in this paper, where the high switching frequency effect has not been fully addressed in existing literature. Significant overvoltage is observed when the switching frequency or its multiples coincide with the cable or motor anti-resonant frequency. The anti-resonant behavior in the cable and motor impedance has been used to identify the overvoltage oscillation frequency and to explain the overvoltage observations for the three types of motor overvoltages. The analysis has been tested using a 7.5kW motor setup with and without a four-core cable, driven by a SiC or a GaN three-phase inverter with a switching frequency up to 250kHz and switching speed up to 40kV/μ s. In addition, the motor bearing current, which is a main cause of bearing degradation, has also been tested and the increase of bearing current is observed due to the high frequency effect.

The emergence of wide-bandgap devices, e.g., silicon carbide (SiC), has the potential to enable very high-density power converter design with high-switching frequency operation capability. A comprehensive design tool with a holistic design approach is critical to maximize the overall system power density, e.g, by identifying the optimal switching frequency. This paper presents a system level design tool that optimizes the power density (volume or mass) of a three-phase, two-level dc-ac converter. The design tool optimizes the selection of the devices, heatsink and passive components (including the design of the line, electromagnetic interference (EMI), and dc-link filters) to maximize the power density. The structure of the optimization algorithm has been organized to reduce the number of potential design combinations by over 99%, and thus, produces fast simulation times. The design tool predicts that when SiC devices are used instead of Si ones, the power density is increased by 159.4%. A 5 kW, 600-V dc-link, three-phase, two-level dc-ac converter was experimentally evaluated in order to confirm the accuracy of the design tool.

Fast-switching power converters are a key enabling technology for the more electric aircraft (MEA), but the generated electromagnetic interference (EMI) poses significant challenges to the electrification effort. To meet the stringent aerospace EMI standards, passive filters are commonly employed, despite the weight and size constraints imposed by the MEA. Alternatively, the EMI source, i.e., the high dv/dt and di/dt slew rates, can be addressed through waveform-shaping techniques. For example, while most soft-switching converters can reduce switching loss, they do so by switching the semiconductor devices in a slower and smoother manner, resulting in the attenuation of high-frequency harmonics. This paper examines the auxiliary commutated pole inverter (ACPI) topology, and its first contribution is the attenuation of the high-frequency content of its EMI source, that is, the output voltage, in a predictable manner, through the active control of the resonant circuit. This is achieved by first, discussing the time-domain characteristics of trapezoidal and S-shaped pulse-trains that lead to attenuated high-frequency harmonic content, and second, by analyzing the equivalent LC circuit of the ACPI. The design of the inverter is then focused on the active control of the resonant parameters, for a predetermined and enhanced output voltage high-frequency response. The second contribution of this paper is the comparison of the EMI performance of hard switching and of three soft-switching modes, fixed-timing control, variable-timing control, and capacitive turn-OFFs, and how this informs important metrics such as power efficiency, current stress, and implementation complexity. Finally, the third contribution is on the trade-offs that arise when the primary design goal is enhanced EMI performance as opposed to switching loss reduction. A 5-kW, 3-phase ACPI prototype is used for validating the high-frequency content attenuation at source. It is shown that the ACPI can achieve a 37 dB harmonic attenuation of its output voltage at 4 MHz, compared to a hard-switched inverter.

To solve the issue of exponentially increasing computational burden of finite control set model predictive control (FCS-MPC) for multilevel converters, a fast MPC scheme for multilevel cascaded H-bridge STATCOM is presented. The proposed approach consists of three steps. First, with the partially stratified optimization approach, the multiobjective programming of MPC is divided into two suboptimization problems, i.e., current-control MPC and voltage-balancing MPC. Second, a dynamic programming algorithm is proposed for the optimization of current-control MPC. Third, a mixed algorithm, which combines dynamic programming and greedy algorithm (0-1 programing), is proposed to select the optimal switching combination from all the redundant switching combinations for the voltage balancing MPC achieving a global optimization. Through the analysis of the time complexity, with the proposed scheme, the total computation of FCS-MPC can be reduced to polynomial time from exponential time. The proposed approaches will not deteriorate the control performance. The control performance is validated by simulation results and the effectiveness is further demonstrated by implementing the algorithm on a low-cost DSP (TMS320F28335) in real time.