The main aim of this work is to present a step-by-step procedure to model and analyze the power loss distribution of three-level Gallium Nitride (GaN) inverters. It has been applied to three distinct three-phase three-level voltage source inverters utilized in electric traction drives: Active Neutral Point Clamped, Neutral Point Clamped and T-Type Neutral Point Clamped. The proposed analytical power loss modelling, combined with an equivalent representation of the electrical machine proved to be a viable solution to achieve a time-saving and low computational burden simulation platform, leading to satisfying accurate results. This has been confirmed by comparing the results carried out from the simulations of a 110 kW permanent magnet synchronous motor drive and those determined by considering a simplified circuital representation based on the proposed analytical power loss modelling.

This paper investigates the behavior of SiC MOSFETs body diode reverse recovery as a function of different operating conditions. The knowledge of their effects is crucial to properly designing and driving power converters based on SiC devices, in order to optimize the MOSFETs commutations aiming at improving efficiency. Indeed, reverse recovery is a part of the switching transient, but it has a significant role due to its impact on recovery energy and charge. The set of different operating conditions has been properly chosen to prevent or force the snappy recovery of the device under testing. The experimental results and specific software simulations have revealed phenomena unknown in the literature. More specifically, the analysis of the reverse recovery charge, Q_rr, revealed two unexpected phenomena at high temperatures: it decreased with increasing gate voltage; the higher the device threshold, the higher the Q_rr. TCAD-Silvaco (ATLAS v. 5.29.0.C) simulations have shown that this is due to a displacement current flowing in the drift region due to the output capacitance voltage variation during commutation. From the analysis of the snappy recovery, it has emerged that there is a minimum forward current slope, below which the reverse recovery cannot be snappy, even for a high current level. Once this current slope is reached, Q_rr varies with the forward current only.

Measuring the gate-source voltages of wide bandgap (WBG) devices in half-bridge converters provides useful information about susceptibility to crosstalk, which can cause uncontrolled cross-conduction and excessive gate-oxide stresses. However, parasitic elements of the printed circuit board (PCB) and device packaging can compromise measurement accuracy, causing unreliable results. Here we describe how this shortcoming can be addressed using devices in packages that have a Kelvin source pin, allowing a more accurate analysis.

The main aim of this work is to present a step-by-step procedure to model and analyze the power loss distribution of three-level Gallium Nitride (GaN) inverters. It has been applied to three distinct three-phase three-levels voltage source inverters utilized in electric traction drives: Active Neutral Point Clamped, Neutral Point Clamped and T-Type Neutral Point Clamped. The proposed analytical power loss modelling, combined to an equivalent representation of the electrical machine demonstrated to be a viable solution to achieve a time-saving and low computational burden simulation platform, leading to satisfying accuracy results. This has been confirmed by comparing the results carried out from the simulations of a 110kW permanent magnet synchronous motor drive and those determined by considering a simplified circuital representation based on the proposed analytical power loss modelling.