Femtosecond laser pulses are currently regarded as an emerging and promising tool for processing wide bandgap dielectric materials across a variety of high-end applications, although the associated physical phenomena are not yet fully understood. To address these challenges, we propose an original, fully analytical model combined with Two Temperatures Model (TTM) formalism. The model is applied to describe the interaction of fs laser pulses with a typical dielectric target (e.g., Sapphire). It describes the heating of dielectrics, such as Sapphire, under irradiation by fs laser pulses in the range of (10¹²–10¹⁴) W/cm². The proposed formalism was implemented to calculate the free electron density, while numerical simulations of temperature field evolution within the dielectrics were conducted using the TTM. Mathematical models have rarely been used to solve the TTM in the context of laser–dielectric interactions. Unlike the TTM applied to metals, which requires solving two heat equations, for dielectrics the free electron density must first be determined. We propose an analytical model to solve the TTM equations using this parameter. A new simulation model was developed, combining the equations for non-equilibrium electron density determination with the TTM equations. Our analyses revealed the non-linear nature of the physical phenomena involved and the inapplicability of the Beer–Lambert law for fs laser pulse interactions with dielectric targets at incident laser fluences ranging from 6 to 20 J/cm².

The structure, composition and corrosion properties of thin films synthesized using the Pulsed Laser Deposition (PLD) technique starting from a three high entropy alloy (HEA) AlCoCrFeNix produced by vacuum arc remelting (VAR) method were investigated. The depositions were performed at room temperature on Si and mirror-like polished Ti substrates either under residual vacuum (low 10⁻⁷ mbar, films denoted HEA2, HEA6, and HEA10, which were grown from targets with Ni concentration molar ratio, x, equal to 0.4, 1.2, and 2.0, respectively) or under N₂ (10⁻⁴ mbar, films denoted HEN2, HEN6, and HEN10 for the same Ni concentration molar ratios). The deposited films’ structures, investigated using Grazing Incidence X-ray Diffraction, showed the presence of face-centered cubic and body-centered cubic phases, while their surface morphology, investigated using scanning electron microscopy, exhibited a smooth surface with micrometer size droplets. The mass density and thickness were obtained from simulations of acquired X-ray reflectivity curves. The films’ elemental composition, estimated using the energy dispersion X-ray spectroscopy, was quite close to that of the targets used. X-ray Photoelectron Spectroscopy investigation showed that films deposited under a N₂ atmosphere contained several percentages of N atoms in metallic nitride compounds. The electrochemical behavior of films under simulated body fluid (SBF) conditions was investigated by Open Circuit Potential (OCP) and Electrochemical Impedance Spectroscopy measurements. The measured OCP values increased over time, implying that a passive layer was formed on the surface of the films. It was observed that all films started to passivate in SBF solution, with the HEN6 film exhibiting the highest increase. The highest repassivation potential was exhibited by the same film, implying that it had the highest stability range of all analyzed films. Impedance measurements indicated high corrosion resistance values for HEA2, HEA6, and HEN6 samples. Much lower resistances were found for HEN10 and HEN2. Overall, HEN6 films exhibited the best corrosion behavior among the investigated films. It was noticed that for 24 h of immersion in SBF solution, this film was also a physical barrier to the corrosion process, not only a chemical one.