Simulation and analysis of solar cells based on the heterojunction of zinc oxide doped with aluminum (AZO) and cadmium telluride (CdTe) with the structure (Al/AZO/CdTe/NiO/Ni) using the Simulator of the capacitance of solar cells - 1 dimension (SCAPS-1D) has been presented in this paper. AZO is used as a window layer and Nickel oxide (NiO) has been introduced as a hole transport layer (HTL). Through the software, the effect of thickness, absorber (CdTe), and window (AZO) layers carrier concentration, operating temperature, and resistances (series and shunt) have been studied. Simulation results show that the solar cell performance can be greatly improved by adjusting the layer's thickness and carrier concentration, obtaining optimal values of 10 nm and 10 18 c m - 3 for the AZO layer, while for the CdTe layer they were 2 μm and 10 15 c m - 3 . The optimum series and shunt resistances are in the range of 1-3 Ω c m 2 and 1800-2200 Ω c m 2 respectively. A maximum power conversion efficiency (PCE) of 14.2% is achieved with an open circuit voltage (Voc) of 0.74 V, short circuit current density (Jsc) of 26.15 m A / c m 2 and a fill factor (FF) of 72.83%, this shows AZO potential to be considered as an interesting material to replace CdS window layer.

We studied the influences of the thickness of the porous silicon layer and the conductivity type on the porous silicon sensors response when exposed to ethanol vapor. The response was determined at room temperature (27 ${}^{\circ }$C) in darkness using a horizontal aluminum electrode pattern. The results indicated that the intensity of the response can be directly or inversely proportional to the thickness of the porous layer depending on the conductivity type of the semiconductor material. The response of the porous sensors was similar to the metal oxide sensors. The results can be used to appropriately select the conductivity of semiconductor materials and the thickness of the porous layer for the target gas.

In this paper, a solar cell based on ${\mathrm{W}\mathrm{O}}_3$/CdTe heterojunction was analyzed and optimized, for which the following structure of the Al/AZO/${\mathrm{W}\mathrm{O}}_3$/CdTe/NiO/Ni device was proposed, which was numerically simulated by the SCAPS 1-D software. Using the software, the effect of the thickness and carrier concentration of the absorber layer (CdTe) and the window layer (${\mathrm{W}\mathrm{O}}_3$) was analyzed, and the optimal value of these parameters was found to be 2 µm and ${10}^{15}{\mathrm{c}\mathrm{m}}^{-3}$ for the CdTe layer and 10 nm and ${10}^{19}{\mathrm{c}\mathrm{m}}^{-3}$ for the ${\mathrm{W}\mathrm{O}}_3$ layer, respectively. The influence of the defect density of the ${\mathrm{W}\mathrm{O}}_3$/CdTe interface on the performance of the proposed cell was also analyzed, simulating from ${10}^{10}$ to ${10}^{16}$ ${\mathrm{c}\mathrm{m}}^{-2}$, obtaining better device performance at lower interface defect density. Another parameter analyzed was the operating temperature on the photovoltaic performance of the device, observing that the solar cell has a better performance at lower temperatures. Finally, a maximum optimized PCE of 19.87% is obtained with a V_oc = 0.85 V, J_sc = 28.45 $\mathrm{m}\mathrm{A}/{\mathrm{c}\mathrm{m}}^2$, and FF = 82.03%, which makes the ${\mathrm{W}\mathrm{O}}_3$/CdTe heterojunction an interesting alternative for the development of CdTe-based solar cells.

Tantalum-doped ZnO structures (ZnO:Ta) were synthesized, and some of their characteristics were studied. ZnO material was deposited on silicon substrates by using a hot filament chemical vapor deposition (HFCVD) reactor. The raw materials were a pellet made of a mixture of ZnO and Ta₂O₅ powders, and molecular hydrogen was used as a reactant gas. The percentage of tantalum varied from 0 to 500 mg by varying the percentages of tantalum oxide in the mixture of the pellet source, by holding a fixed amount of 500 mg of ZnO in all experiments. X-ray diffractograms confirmed the presence of zinc oxide in the wurtzite phase, and metallic zinc with a hexagonal structure, and no other phase was detected. Displacements to lower angles of reflection peaks, compared with those from samples without doping, were interpreted as the inclusion of the Ta atoms in the matrix of the ZnO. This fact was confirmed by energy dispersive X-ray spectrometry (EDS), and X-ray diffraction (XRD) measurements. From scanning electron microscopy (SEM) images from undoped samples, mostly micro-sized semi-spherical structures were seen, while doped samples displayed a trend to grow as nanocrystalline rods. The presence of tantalum during the synthesis affected the growth direction. Green photoluminescence was observed by the naked eye when Ta-doped samples were illuminated by ultraviolet radiation and confirmed by photoluminescence (PL) spectra. The PL intensity on the Ta-doped ZnO increased from those undoped samples up to eight times.

Tantalum doped ZnO structures (ZnO:Ta) were synthesized and some of their characteristics were studied. ZnO material was deposited on silicon substrates by using a hot filament chemical vapor deposition (HFCVD) reactor. The raw materials were a pill made of a mixture of ZnO and Ta₂O₅ powders, and molecular hydrogen was used as a reactant gas. Percentage of tantalum was varied from 0 to 500 mg by varying the percentage of tantalum oxide in the mixture of the pill source, by holding a fixed amount of 500 mg of ZnO in all experiments. X-ray diffractograms confirmed the presence of zinc oxide in the wurtzite phase and metallic zinc with a hexagonal structure, and no other phase was detected. Displacements to lower angles of reflection peaks, compared with those from samples without contamination, were interpreted as the inclusion of the Ta atoms in the matrix of the ZnO. This fact was confirmed by EDS and XRD measurements. From SEM images from undoped samples exhibited mostly micro sized semi-spherical structures while doped samples displayed a trend to grown as nanocrystalline rods. The presence of tantalum during the synthesis affects the way of the growth. Green photoluminescence at naked eye was observed when Ta doped samples were illuminated by ultraviolet radiation and confirmed by PL spectra. PL intensity on Ta doped ZnO varied from those undoped samples up to 8 times.

The effect of the gaseous atmosphere in the growth of gallium arsenide (GaAs) films was studied. The films have been grown by close-spaced vapor transport (CSVT) technique in a home-made hot filament chemical vapor deposition (HFCVD) reactor using molecular hydrogen and molecular nitrogen as the transport agent. An important point about the gaseous atmosphere is the ease in creating volatile compounds when it makes contact with the GaAs source, this favors the transport of material in a CSVT system. Chemical reactions are proposed in order to understand the significant difference produced from the gaseous atmosphere. The films grown with hydrogen are (almost) continuous and have homogeneous layers with preferential orientation (111). The films grown with nitrogen are granular and rough layers with the coexistence of the orientations (111), (220) and (311) in the crystals. The incorporation of impurities in the films was corroborated by energy dispersive spectroscopy (EDS) showing traces of oxygen and nitrogen for the case of the samples obtained with nitrogen. Films grown in a hydrogen atmosphere show a higher band gap than those grown in a nitrogen atmosphere. With the results of XRD and micro-Raman we observe a displacement and broadening of the peaks, characteristic of a structural disorder. The calculations of the FWHM allow us to observe the crystallinity degree and determine an approximate crystallite size using the Scherrer’s equation.