Spintronics, utilizing both the charge and spin of electrons, benefits from the nonvolatility, low switching energy, and collective behavior of magnetization. These properties allow the development of magnetoresistive random access memories, with magnetic tunnel junctions (MTJs) playing a central role. Various spin logic concepts are also extensively explored. Among these, spin logic devices based on the motion of magnetic domain walls (DWs) enable the implementation of compact and energy-efficient logic circuits. In these devices, DW motion within a magnetic track enables spin information processing, while MTJs at the input and output serve as electrical writing and reading elements. DW logic holds promise for simplifying logic circuit complexity by performing multiple functions within a single device. Nevertheless, the demonstration of DW logic circuits with electrical writing and reading at the nanoscale is still needed to unveil their practical application potential. In this review, we discuss material advancements for high-speed DW motion, progress in DW logic devices, groundbreaking demonstrations of current-driven DW logic, and its potential for practical applications. Additionally, we discuss alternative approaches for current-free information propagation, along with challenges and prospects for the development of DW logic.

The Dzyaloshinskii-Moriya interaction (DMI) is known to play a central role in stabilizing chiral spin textures such as skyrmions and domain walls (DWs). Electrical manipulation of DW and skyrmion motion offers possibilities for next-generation, scalable and energy-efficient spintronic devices. However, achieving the full potential of these nanoscale devices requires overcoming several challenges, including reliable electrical write and read techniques for these magnetic objects, and addressing pinning and Joule-heating concerns. Here, through micromagnetic simulations and analytical modeling, we show that DMI can directly induce magnetization switching of a nanomagnet with perpendicular magnetic anisotropy (PMA). We find that the switching is driven by the interplay between the DMI-induced magnetic frustration and the PMA. By introducing magnetic tunnel junctions to electrically access and control the magnetization direction of the PMA nanomagnet, we first show the potential of this concept to enable high-density field-free spin-orbit torque magnetic random-access memory. Ultimately, we demonstrate that it offers a way of transferring and processing spin information for logic operation without relying on current-driven DW or skyrmion motion.

Utilizing magnetic tunnel junctions (MTJs) for write/read and fast spin-orbit-torque (SOT)-driven domain-wall (DW) motion for propagation, enables non-volatile logic and majority operations, representing a breakthrough in the implementation of nanoscale DW logic devices. Recently, current-driven DW logic gates have been demonstrated via magnetic imaging, where the Dzyaloshinskii-Moriya interaction (DMI) induces chiral coupling between perpendicular magnetic anisotropy (PMA) regions via an in-plane (IP) oriented region. However, full electrical operation of nanoscale DW logic requires electrical write/read operations and a method to pattern PMA and IP regions compatible with the fabrication of PMA MTJs. Here, we study the use of a Hybrid Free Layer (HFL) concept to combine an MTJ stack with DW motion materials, and He+ ion irradiation to convert the stack from PMA to IP. First, we investigate the free layer thickness dependence of 100-nm diameter HFL-MTJ devices and find an optimal CoFeB thickness, from 7 to 10 Å, providing high tunneling magnetoresistance (TMR) readout and efficient spin-transfer torque (STT) writing. We then show that high DMI materials, like Pt/Co, can be integrated into an MTJ stack via interlayer exchange coupling with the CoFeB free layer. In this design, DMI values suitable for SOT-driven DW motion are measured by asymmetric bubble expansion. Finally, we demonstrate that He+ irradiation reliably converts the coupled free layers from PMA to IP. These findings offer a path toward the integration of fully electrically controlled DW logic circuits.

Detecting the magnetic states of synthetic antiferromagnets (SAFs) at the nanoscale is challenging due to their low net magnetization. We demonstrate an electrical method based on tunneling magnetoresistance (TMR) in nanoscale magnetic tunnel junctions to selectively detect the magnetization of a single SAF sublayer. TMR hysteresis loops reveal distinct switching behaviors governed by the competition between magnetic anisotropy and interlayer exchange coupling. This sensitivity enables direct quantification of exchange coupling under both field- and spin-transfer torque-driven reversals, while accessing the overall SAF magnetic state independent of its net magnetization.

Chirally coupled magnetic tunnel junctions (MTJs) have been proposed as a route toward compact spin logic architectures. Micromagnetic simulations indeed show that chiral coupling between adjacent MTJs with perpendicular magnetic anisotropy (PMA) can be achieved through an in‐plane (IP) interconnection mediated by the Dzyaloshinskii–Moriya interaction, eliminating the need for current‐driven domain‐wall motion. Nevertheless, experimental implementation of this concept requires precise manipulation of PMA to define IP interconnections between MTJs, as well as independent control of DMI to ensure reliable coupling. Here, we introduce a hybrid free layer (HFL) stack comprising an Ir/Co bottom layer and a CoFeB/MgO top layer providing PMA. We show that ultrathin Pt insertion layers at the Ir/Co interface provide an effective means to tune the DMI without affecting PMA, enabling independent control of both properties. Finally, we develop an ion beam etching (IBE) process on a 300‐mm platform that selectively suppresses the CoFeB/MgO contribution to PMA, thereby converting the stack to IP magnetization. This approach enables the manipulation of the PMA of the interconnecting free layer during MTJ patterning, providing a scalable pathway for the fabrication of chirally coupled MTJs.

We present micromagnetic simulations and experiments on voltage-assisted field switching in perpendicular magnetic tunnel junctions (MTJs) with a synthetic antiferromagnetic (SAF) free layer, where the magnetic state of one sublayer is detected via tunneling magnetoresistance (TMR). Simulations reveal that local modulation of perpendicular magnetic anisotropy in one SAF sublayer leads to distinct switching characteristics. The switching field varies linearly with the anisotropy field, indicating voltage-controlled magnetic anisotropy (VCMA)-dominated dynamics similar to single free-layer devices. We then experimentally study the magnetic switching field of MTJ devices with SAF free layers under applied gate voltage. By varying the MgO tunnel barrier thickness to systematically modulate the resistance-area (RA) product, we enable quantitative separation of spin-transfer torque (STT), VCMA, and Joule heating contributions. Our findings indicate that VCMA dominates in devices with a high-RA product, while low-RA devices exhibit nonlinear switching behavior due to enhanced contributions from STT and Joule heating. Furthermore, the effective fields derived from STT, VCMA, and Joule heating contributions under various gate voltages show minimal dependence on device critical dimensions, indicating favorable scaling behavior. This work presents a unified framework analyzing the roles of STT, VCMA, and Joule heating in SAF-based voltage-gated spin–orbit torque (SOT) magnetic random-access memory (MRAM), offering key insights for the optimization of performance, energy efficiency, and scalability in SOT-MRAM technologies.