As quantum processors grow in complexity, new challenges arise such as the management of device variability and the interface with supporting electronics. Spin qubits in silicon quantum dots can potentially address these challenges given their control fidelities and potential for compatibility with large-scale integration. Here we report the integration of 1,024 independent silicon quantum dot devices with on-chip digital and analogue electronics, all operating below 1 K. A high-frequency analogue multiplexer provides fast access to all devices with minimal electrical connections, allowing characteristic data across the quantum dot array to be acquired and analysed in under 10 min. This is achieved by leveraging radio-frequency reflectometry with state-of-the-art signal integrity, characterized by a typical signal-to-noise voltage ratio in excess of 75 for an integration time of 3.18 μs. We extract key quantum dot parameters by automated machine learning routines to assess quantum dot yield and understand the impact of device design. We find correlations between quantum dot parameters and room-temperature transistor behaviour that could be used as a proxy for in-line process monitoring.

Single-photon sources are important for integrated photonics and quantum technologies, and can be used in quantum key distribution, quantum computing, and sensing. Color centers in the solid state are a promising candidate for the development of the next generation of single-photon sources integrated in quantum photonics devices. They are point defects in a crystal lattice that absorb and emit light at given wavelengths and can emit single photons with high efficiency. The landscape of color centers has changed abruptly in recent years, with the identification of a wider set of color centers and the emergence of new solid-state platforms for room-temperature single-photon generation. This review discusses the emerging material platforms hosting single-photon-emitting color centers, with an emphasis on their potential for the development of integrated optical circuits for quantum photonics.

Semiconductor nanostructures have raised much hope for the implementation of high‐performance thermoelectric generators. Indeed, they are expected to make available reduced thermal conductivity without a heavy trade‐off on electrical conductivity, a key requirement to optimize the thermoelectric figure of merit. Here, a novel nanodevice architecture is presented in which ionic liquids are employed as thermally‐insulating gate dielectrics. These devices allow the field‐effect control of electrical transport in suspended semiconducting nanowires in which thermal conductivity can be simultaneously measured using an all‐electrical setup. The resulting experimental data on electrical and thermal transport properties taken on individual nanodevices can be combined to extract ZT, guide device optimization and dynamical tuning of the thermoelectric properties.

Integrated photonics on Silicon-On-Insulator (SOI) substrates is a well developed research field that has already significantly impacted various fields, such as quantum computing, micro sensing devices, biosensing, and high-rate communications. Although quite complex circuits can be made with such technology, everything is based on a few ’building blocks’ which are then combined to form more complex circuits. This review article provides a detailed examination of the state of the art of integrated photonic building blocks focusing on passive elements, covering fundamental principles and design methodologies. Key components discussed include waveguides, fiber-to-chip couplers, edges and gratings, phase shifters, splitters and switches (including y-branch, MMI, and directional couplers), as well as subwavelength grating structures and ring resonators. Additionally, this review addresses challenges and future prospects in advancing integrated photonic circuits on SOI platforms, focusing on scalability, power efficiency, and fabrication issues. The objective of this review is to equip researchers and engineers in the field with a comprehensive understanding of the current landscape and future trajectories of integrated photonic components on SOI substrates with a 220 nm thick device layer of intrinsic silicon.

The preparation of Fe-decorated sporopollenins was achieved using pollen grains and an ionic liquid as solvent and functionalizing agent. The integrity of the organic capsules was ascertained through scanning electron microscopy studies. The presence of Fe in the capsule was investigated using FT-IR, X-ray photoemission spectroscopy and energy-dispersive X-ray spectroscopy. Electron paramagnetic resonance and magnetization measurements allowed us to demonstrate the paramagnetic behavior of our Fe-functionalized sporopollenin. A few potential applications of pollen-based systems functionalized with magnetic metal ions via ionic liquids are discussed.

Iontronics exploits mobile ions within electrolytes to control the electronic properties of materials and devices' electrical and optical response. In this frame, ionic liquids are widely exploited for the gating of semiconducting nanostructure devices, offering superior performance compared to conventional dielectric gating. In this work, we engineer ionic liquid gated InAs nanowire-based field effect transistors and adopt the set-and-freeze dual gate device operation to probe the nanowires in several ionic gate regimes. We exploit standard back-gating at 150 K, when the ionic liquid is frozen and any crosstalk between the ionic gate and the back gate is ruled out. We demonstrate that the liquid gate polarization has a persistent effect on the nanowire properties. This effect can be conveniently exploited to fine-tune the properties of the nanowires and enable new device functionalities. Specifically, we correlate the modification of the ionic environment around the nanowire to the transistor threshold voltage and hysteresis, on/off ratio and current level retention times. Based on this, we demonstrate memory operations of the nanowire field effect transistors. Our work shines a new light on the interaction between electrolytes and semiconducting nanostructures, providing useful insights for future applications of nanodevice iontronics.