Magnetic skyrmions are topologically protected states that are very promising for the design of the next generation of ultra-low-power electronic devices. In this letter, we propose a magnetic tunnel junction based spin-transfer torque diode with a magnetic skyrmion as ground state and a perpendicular polarizer patterned as nano-contact for a local injection of the current. The key result is the possibility to achieve sensitivities (i.e., detection voltage over input microwave power) larger than 2000 V/W for optimized contact diameters. We also pointed out that large enough voltage controlled magnetocrystalline anisotropy could significantly improve the sensitivity. Our results can be very useful for the identification of a class of spin-torque diodes with a non-uniform ground state and to understand the fundamental physics of the skyrmion dynamical properties.

In this brief, a new low-power level shifter (LS) is presented for robust logic voltage shifting from near/sub-threshold to above-threshold domain. The new circuit combines the multi-threshold CMOS technique along with novel topological modifications to guarantee a wide voltage conversion range with limited static power and total energy consumption. When implemented in a 90-nm technology process, the proposed design reliably converts 180-mV input signals into 1-V output signals, while maintaining operational frequencies above 1-MHz, also taking into account process-voltage-temperature variations.Post-layout simulation results demonstrate that the new LS reaches a propagation delay less than 22 ns, a static power dissipation of only 6.4 nW, and a total energy per transition of only 74 fJ for a 0.2-V 1-MHz input pulse.

Multisupply voltage design technique is widely used in modern system-on-chips to tradeoff energy and speed. Level shifters (LSs) allow different voltage domains to be interfaced. In this brief, a new LS is presented for fast and wide range voltage conversion. Because of a novel architecture combined with the use of multithreshold CMOS technique, the proposed circuit guarantees robust voltage shifting from the deep subthreshold to the above-threshold domain while exhibiting fast response and low energy consumption. When implemented in a 90-nm technology node, considering process-voltage-temperature variations, the proposed design reliably converts 100-mV input signals into 1 V output signals. Post-layout simulation results demonstrate that the new LS shows a propagation delay of 16.6 ns, a static power dissipation of 8.7 nW and a total energy per transition of only 77 fJ for a 0.2 V 1-MHz input pulse.

This brief presents an energy-efficient level shifter (LS) able to convert extremely low level input voltages to the nominal voltage domain. To obtain low static power consumption, the proposed architecture is based on the single-stage differential-cascode-voltage-switch scheme. Moreover, it exploits self-adapting pull-up networks to increase the switching speed and to reduce the dynamic energy consumption, while a split input inverting buffer is used as the output stage to further improve energy efficiency. When implemented in a commercial 180-nm CMOS process, the proposed design can up-convert from the deep subthreshold regime (sub-100 mV) to the nominal supply voltage (1.8 V). For the target voltage level conversion from 0.4 to 1.8 V, our LS exhibits an average propagation delay of 31.7 ns, an average static power of less than 60 pW, and an energy per transition of 173 fJ, as experimentally measured across the test chips.

In this paper, we identify the level shifter (LS) for voltage up-conversion from the ultralow-voltage regime as a key application domain of tunnel FETs (TFETs). We propose a mixed TFET-MOSFET LS design methodology, which exploits the complementary characteristics of TFET and MOSFET devices. Simulation results show that the hybrid LS exhibits superior dynamic performance at the same static power consumption compared with the conventional MOSFET and pure TFET solutions. The advantage of the mixed design with respect to the conventional MOSFET approach is emphasized when lower voltage signals have to be up-converted, reaching an improvement of the energy-delay product up to three decades. When compared with the full MOSFET design, the mixed TFET-MOSFET solution appears to be less sensitive toward threshold voltage variations in terms of dynamic figures of merit, at the expense of higher leakage variability. Similar results are obtained for four different LS topologies, thus indicating that the hybrid TFET-MOSFET approach offers intrinsic advantages in the design of LS for voltage up-conversion from the ultralow-voltage regime compared with the conventional MOSFET and pure TFET solutions.