The high efficiency of perovskite solar cells strongly depends on the quality of perovskite films and carrier extraction layers. Here, we present the results of an investigation of the photoelectric properties of solar cells based on perovskite films grown on compact and mesoporous titanium dioxide layers. Kinetics of charge carrier transport and their extraction in triple-cation perovskite solar cells were studied by using transient photovoltage and time-resolved photoluminescence decay measurements. X-ray diffraction analysis revealed that the crystallinity of the perovskite films grown on mesoporous titanium dioxide is better compared to the films grown on compact TiO₂. Mesoporous structured perovskite solar cells are found to have higher power conversion efficiency mainly due to enlarged perovskite/mesoporous -TiO₂ interfacial area and better crystallinity of their perovskite films.

We propose a new design microwave radiation sensor based on a selectively doped semiconductor structure of asymmetrical shape (so-called bow-tie diode). The novelty of the design comes down to the gating of the active layer of the diode above different regions of the two-dimensional electron channel. The gate influences the sensing properties of the bow-tie diode depending on the nature of voltage detected across the ungated one as well as on the location of the gate in regard to the diode contacts. When the gate is located by the wide contact, the voltage sensitivity increases ten times as compared to the case of the ungated diode, and the detected voltage holds the same polarity of the thermoelectric electromotive force of hot electrons in an asymmetrically shaped n-n⁺ junction. Another remarkable effect of the gate placed by the wide contact is weak dependence of the detected voltage on frequency which makes such a microwave diode to be a proper candidate for the detection of electromagnetic radiation in the microwave and sub-terahertz frequency range. When the gate is situated beside the narrow contact, the two orders of sensitivity magnitude increase are valid in the microwaves but the voltage sensitivity is strongly frequency-dependent for higher frequencies.

In the present work we reveal the existence of the hot carrier photovoltage induced across a p–n junction in addition to the classical carrier generation-induced and thermalization-caused photovoltages. On the basis of the solution of the differential equation of the first-order linear time-invariant system, we propose a model enabling to disclose the pure value of each photovoltage component. The hot carrier photovoltage is fast since it is determined by the free carrier energy relaxation time (which is of the order of 10⁻¹² s), while the thermal one, being conditioned by the junction temperature change, is relatively slow; and both of them have a sign opposite to that of the electron-hole pair generation-induced component. Simultaneous coexistence of the components is evidenced experimentally in GaAs p–n junction exposed to pulsed 1.06 μm laser light. The work is remarkable in two ways: first, it shows that creation of conditions unfavorable for the rise of hot carrier photovoltage might improve the efficiency of a single junction solar cell, and second, it should inspire the photovoltaic society to revise the Shockley–Queisser limit by taking into account the damaging impact of the hot carrier photovoltage.

Niobium-doped titanium dioxide (Ti_1−xNb_xO₂) films were grown on p-type Si substrates at low temperature (170 °C) using an atomic layer deposition technique. The as-deposited films were amorphous and showed low electrical conductivity. The films became electrically well-conducting and crystallized into the an anatase structure upon reductive post-deposition annealing at 600 °C in an H₂ atmosphere for 30 min. It was shown that the Ti_0.72Nb₀.₂₈O₂/p⁺-Si heterojunction fabricated on low resistivity silicon (10⁻³ Ω cm) had linear current–voltage characteristic with a specific contact resistivity as low as 23 mΩ·cm². As the resistance dependence on temperature revealed, the current across the Ti_0.72Nb_0.28O₂/p⁺-Si heterojunction was mainly determined by the band-to-band charge carrier tunneling through the junction.

The experimental and theoretical study of photovoltage formation in perovskite solar cells under pulsed laser excitation at 0.53 μm wavelength is presented. Two types of solar cells were fabricated on the base of cesium-containing triple cation perovskite films: (1) Cs_x(FA_0.83MA_0.17)_(1−x)Pb(I_0.83Br_0.17)₃ and (2) Cs_x(FA_0.83MA_0.17)_(1−x)Pb_0.8Sn_0.2(I_0.83Br_0.17)₃. It is found that photovoltage across the solar cells consists of two components, U = U_ph + U_f. The first one, U_ph, is the traditional photovoltage arising due to laser radiation-induced electron-hole pair generation. The second one, U_f, is the fast component following the laser pulse and has a polarity opposite to that of U_ph. It is shown that the fast photovoltage component results from the laser radiation-caused heating of free carriers. The transient photovoltage measurements show that the values of the fast component U_f are nearly the same in both types of perovskite solar cells. The magnitude of the traditional photovoltage of mixed Pb-Sn perovskite solar cells is lower than that of Pb-based cells.

Bow-tie diodes on the base of modulation-doped semiconductor structures are often used to detect radiation in GHz to THz frequency range. The operation of the bow-tie microwave diodes is based on carrier heating phenomena in an epitaxial semiconductor structure with broken geometrical symmetry. However, the electrical properties of bow-tie diodes are highly dependent on the purity of the grown epitaxial layer—specifically, the minimal number of defects—and the quality of the ohmic contacts. The quality of MBE-grown semiconductor structure depends on the presence of a buffer layer between a semiconductor substrate and an epitaxial layer. In this paper, we present an investigation of the electrical and optical properties of planar bow-tie microwave diodes fabricated using modulation-doped semiconductor structures grown via the MBE technique, incorporating either a GaAs buffer layer or a GaAs–AlGaAs super-lattice buffer between the semi-insulating substrate and the active epitaxial layer. These properties include voltage sensitivity, electrical resistance, I–V characteristic asymmetry, nonlinearity coefficient, and photoluminescence. The investigation revealed that the buffer layer, as well as the illumination with visible light, strongly influences the properties of the bow-tie diodes.