Different applications require different customizations of silicon photomultiplier (SiPM) technology. We present a review on the latest SiPM technologies developed at Fondazione Bruno Kessler (FBK, Trento), characterized by a peak detection efficiency in the near-UV and customized according to the needs of different applications. Original near-UV sensitive, high-density SiPMs (NUV-HD), optimized for Positron Emission Tomography (PET) application, feature peak photon detection efficiency (PDE) of 63% at 420 nm with a 35 um cell size and a dark count rate (DCR) of 100 kHz/mm². Correlated noise probability is around 25% at a PDE of 50% at 420 nm. It provides a coincidence resolving time (CRT) of 100 ps FWHM (full width at half maximum) in the detection of 511 keV photons, when used for the readout of LYSO(Ce) scintillator (Cerium-doped lutetium-yttrium oxyorthosilicate) and down to 75 ps FWHM with LSO(Ce:Ca) scintillator (Cerium and Calcium-doped lutetium oxyorthosilicate). Starting from this technology, we developed three variants, optimized according to different sets of specifications. NUV-HD–LowCT features a 60% reduction of direct crosstalk probability, for applications such as Cherenkov telescope array (CTA). NUV-HD–Cryo was optimized for cryogenic operation and for large photosensitive areas. The reference application, in this case, is the readout of liquid, noble-gases scintillators, such as liquid Argon. Measurements at 77 K showed a remarkably low value of the DCR of a few mHz/mm². Finally, vacuum-UV (VUV)-HD features an increased sensitivity to VUV light, aiming at direct detection of photons below 200 nm. PDE in excess of 20% at 175 nm was measured in liquid Xenon. In the paper, we discuss the specifications on the SiPM related to different types of applications, the SiPM design challenges and process optimizations, and the results from the experimental characterization of the different, NUV-sensitive technologies developed at FBK.

The coincidence time resolution (CTR) becomes a key parameter of 511keV gamma detection in time of flight positron emission tomography (TOF-PET). This is because additional information obtained through timing leads to a better noise suppression and therefore a better signal to noise ratio in the reconstructed image. In this paper we present the results of CTR measurements on two different SiPM technologies from FBK coupled to LSO:Ce codoped 0.4%Ca crystals. We compare the measurements performed at two separate test setups, i.e. at CERN and at FBK, showing that the obtained results agree within a few percent. We achieve a best CTR value of 85 ± 4 ps FWHM for 2 × 2 × 3 mm ³ LSO:Ce codoped 0.4%Ca crystals, thus breaking the 100 ps barrier with scintillators similar to LSO:Ce or LYSO:Ce. We also demonstrate that a CTR of 140 ± 5 ps can be achieved for longer 2 × 2 × 20 mm ³ crystals, which can readily be implemented in the current generation PET systems to achieve the desired increase in the signal to noise ratio.

In this paper, we report on the characterization of the single-photon time resolution (SPTR) of the RGB (Red-Green-Blue) type silicon photomultipliers (SiPM) produced at FBK. We measured and compared single-photon timing jitter of 1 ×1 mm ² and 3 ×3 mm ² SiPMs, and also of square SPADs with integrated passive quenching, identical to the cells composing the SiPMs. We reached a single-photon time resolution of about 180 ps full-width at half-maximum for 3 ×3 mm ² SiPM, 80 ps for 1 ×1 mm ² SiPM and less than 50 ps for single cells. From measurements with pinholes placed in front of 1 ×1 mm ² detector we see a very good cell-to-cell uniformity: it is not a limiting factor for time resolution. We also characterized the timing jitter of SiPMs as a function of the number of photons per laser pulse (N) finding that it does not decrease exactly with the square root of N because of the optical crosstalk between cells.

In this paper, we present the characteristics and performances of new silicon photomultipliers (SiPMs), produced at FBK, for the near-ultraviolet (NUV) light detection, with reduced afterpulsing and delayed optical crosstalk. To study these components of the correlated noise, we manufactured SiPMs on silicon wafers featuring different substrate minority-carrier lifetime. This parameter proved to be crucial in determining the amount of delayed optical crosstalk and afterpulsing caused by photo-generated carriers diffusing from the substrate to the cell active region. With a very low substrate lifetime, we were able to minimize this correlated noise component to few percent at room temperature. Besides reducing the excess noise factor, the lower delayed correlated noise allows biasing the SiPM at higher voltages, reaching higher values of photon detection efficiency.

The most common method for time pick-off from signals coming from SiPMs coupled to scintillator crystals in PET applications is the Leading Edge Triggering. In this work we propose a new filtering scheme to be applied before the discriminator. It implements a type of baseline compensation aimed at the reduction of the time jitter due to the dark counts of the detector and is based on a simple analog filter, which is well suited for an ASIC implementation. We describe a circuit, built with discrete components, that implements the filter. Finally we report on the Coincidence Resolving Time measurements performed coupling the circuit to the real detector, composed of a SiPM built at FBK and a LYSO crystal, for the detection of 511 keV photons. The results obtained are promising, showing that the method is quite effective in reducing the impact of the detector noise on the timing performance of the system.

We present a novel design of fine segmented low gain avalanche diodes (LGAD) based on trenchisolation technique. The proposed design reduces the width of the no-gain inter-pad region down to less than 10 μm, from the 20-80 μm of the current LGAD technology, enabling the production of sensors with small pixel pitch and high fill-factor. Prototypes of this new technology were produced in the FBK laboratories. Their electrical characterization in terms of I-V, gain measurement and response to a focused laser, indicates that the trenches provide electrical isolation among pixels without any increase in the dark current level and without affecting the gain of the sensor. In addition, I-V measurements of p-i-n diodes with the same trench-isolation structure demonstrate that such termination scheme can withstand more than 500 Volts without reaching breakdown. This is well above the typical operating bias voltage of LGADs, thus confirming that trench-isolation is a promising solution for finely pixelated LGAD sensors.