Different applications require different customizations of silicon photomultiplier (SiPM) technology. We present a review on the latest SiPM technologies developed at Fondazione Bruno Kessler (FBK, Trento), characterized by a peak detection efficiency in the near-UV and customized according to the needs of different applications. Original near-UV sensitive, high-density SiPMs (NUV-HD), optimized for Positron Emission Tomography (PET) application, feature peak photon detection efficiency (PDE) of 63% at 420 nm with a 35 um cell size and a dark count rate (DCR) of 100 kHz/mm². Correlated noise probability is around 25% at a PDE of 50% at 420 nm. It provides a coincidence resolving time (CRT) of 100 ps FWHM (full width at half maximum) in the detection of 511 keV photons, when used for the readout of LYSO(Ce) scintillator (Cerium-doped lutetium-yttrium oxyorthosilicate) and down to 75 ps FWHM with LSO(Ce:Ca) scintillator (Cerium and Calcium-doped lutetium oxyorthosilicate). Starting from this technology, we developed three variants, optimized according to different sets of specifications. NUV-HD–LowCT features a 60% reduction of direct crosstalk probability, for applications such as Cherenkov telescope array (CTA). NUV-HD–Cryo was optimized for cryogenic operation and for large photosensitive areas. The reference application, in this case, is the readout of liquid, noble-gases scintillators, such as liquid Argon. Measurements at 77 K showed a remarkably low value of the DCR of a few mHz/mm². Finally, vacuum-UV (VUV)-HD features an increased sensitivity to VUV light, aiming at direct detection of photons below 200 nm. PDE in excess of 20% at 175 nm was measured in liquid Xenon. In the paper, we discuss the specifications on the SiPM related to different types of applications, the SiPM design challenges and process optimizations, and the results from the experimental characterization of the different, NUV-sensitive technologies developed at FBK.

In this paper, we present the full characterization of a new high-density (HD) cell silicon photomultiplier (SiPM) technology for ultraviolet (UV) and blue light detection, named near UV HD SiPM. Thanks to an optimized border region around each cell, we were able to develop devices having a very high detection efficiency and, at the same time, a high dynamic range. We produced SiPMs with a square cell pitch of 15, 20, 25, and 30 μm featuring a peak efficiency in the violet region ranging from 40% to 55%, according to the cell size. We tested this technology for time-of-flight positron emission tomography. Using two 4 × 4 mm ² SiPMs with a 25 × 25 μm ² cell pitch coupled to 3 × 3 × 5 mm ³ LYSO scintillators, we reached for the first time 100-ps full-width at half-maximum coincidence time resolution. This result was independent of the temperature in a range from 20 °C to -20 °C. At the same time, thanks to the high dynamic range and low correlated noise, we obtained an energy resolution lower than 9% for 511-keV γ-rays.

This paper reports on the electrical characterization of the first prototypes of Geiger-Mode Avalanche Photodiodes (GM-APDs) and Silicon Photomultipliers (SiPMs) produced at ITC-irst, Trento. Both static and functional measurements have been performed in dark condition. The static tests, consisting in reverse and forward IV measurements, have been performed on 20GM-APDs and 90 SiPMs. The breakdown voltage, the quenching resistance value and the current level have been proved to be very uniform. On the other hand, the analysis of the dark signals allowed the extraction of important properties such as the dark count rate, the gain, the after-pulse and optical cross-talk (in case of the SiPMs) rates. These parameters have been evaluated as a function of the bias voltage, showing trends perfectly compatible with the theory of the device

We report on the characterization of near-ultraviolet high-density silicon photomultiplier (SiPM) developed at Fondazione Bruno Kessler (FBK) at cryogenic temperature. A dedicated setup was built to measure the primary dark noise and correlated noise of the SiPMs between 40 and 300 K. Moreover, an analysis program and data acquisition system were developed to allow the precise characterization of these parameters, some of which can vary up to seven orders of magnitude between room temperature and 40 K. We demonstrate that it is possible to operate the FBK near-ultraviolet high density SiPMs at temperatures lower than 100 K with a dark rate below 0.01 cps/mm ² and total correlated noise probability below 35% at an overvoltage of 6 V. These results are relevant for the development of future cryogenic particle detectors using SiPMs as photosensors.