Dr. Fabio Acerbi was born in Carpi, Italy, in 1984. He received a bachelor’s degree in electronics engineering from the University of Modena and Reggio Emilia, Modena, Italy, in 2006; a master’s degree and a Ph.D. degree from the Politecnico di Milano, Milan, Italy, in 2008 and 2012. From 2009 to March 2013, he collaborated with the Department of Electronics and Information (DEI) of the Politecnico di Milano, working on InGaAs/InP single-photon avalanche diodes (SPADs). Since April 2013, he has been collaborating with Fondazione Bruno Kessler (FBK), Trento, Italy, working on the development and characterization of silicon SPADs, silicon photomultipliers (SiPMs), pinned photodiodes, random number generators, and fast readout electronics.
Research Keywords & Expertise
CMOS imagers
Single-photon detector...
Avalanche diodes
Silicon photomultiplie...
Fast electronics
Silicon photodetectors
InGaAs photodetectors
Quantum random number ...
Short Biography
Dr. Fabio Acerbi was born in Carpi, Italy, in 1984. He received a bachelor’s degree in electronics engineering from the University of Modena and Reggio Emilia, Modena, Italy, in 2006; a master’s degree and a Ph.D. degree from the Politecnico di Milano, Milan, Italy, in 2008 and 2012. From 2009 to March 2013, he collaborated with the Department of Electronics and Information (DEI) of the Politecnico di Milano, working on InGaAs/InP single-photon avalanche diodes (SPADs). Since April 2013, he has been collaborating with Fondazione Bruno Kessler (FBK), Trento, Italy, working on the development and characterization of silicon SPADs, silicon photomultipliers (SiPMs), pinned photodiodes, random number generators, and fast readout electronics.
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