Indium phosphide (InP) is widely utilized in the fields of electronics and photovoltaics due to its high electron mobility and high photoelectric conversion efficiency. Strain engineering has been extensively employed in semiconductor devices to adjust physical properties and enhance material performance. In the present work, the band structure and electronic effective mass of InP under different strains are investigated by ab initio calculations. The results show that InP consistently exhibits a direct bandgap under different strains. Both uniaxial strain and biaxial tensile strain exhibit linear effects on the change in bandgap values. However, the bandgap of InP is significantly influenced by uniaxial compressive strain and biaxial tensile strain, respectively. The study of the InP bandgap under different hydrostatic pressures reveals that InP becomes metallic when the pressure is less than −7 GPa. Furthermore, strain also leads to changes in effective mass and the anisotropy of electron mobility. The studies of electronic properties under different strain types are of great significance for broadening the application of InP devices.

Indium phosphide (InP) is an excellent material used in space electronic devices due to its direct band gap, high electron mobility, and high radiation resistance. Displacement damage in InP, such as vacancies, interstitials, and clusters, induced by cosmic particles can lead to the serious degradation of InP devices. In this work, the analytical bond order potential of InP is modified with the short-range repulsive potential, and the hybrid potential is verified for its reliability to simulate the atomic cascade collisions. By using molecular dynamics simulations with the modified potential, the primary damage defects evolution of InP caused by 1–10 keV primary knock-on atoms (PKAs) are studied. The effects of electronic energy loss are also considered in our research. The results show that the addition of electronic stopping loss reduces the number of point defects and weakens the damage regions. The reduction rates of point defects caused by electronic energy loss at the stable state are 32.2% and 27.4% for 10 keV In-PKA and P-PKA, respectively. In addition, the effects of electronic energy loss can lead to an extreme decline in the number of medium clusters, cause large clusters to vanish, and make the small clusters dominant damage products in InP. These findings are helpful to explain the radiation-induced damage mechanism of InP and expand the application of InP devices.

As an important second-generation semiconductor material, indium phosphide (InP) possesses excellent advantages such as a wide bandgap, high electron mobility, high photoelectric conversion efficiency, and strong radiation resistance. It is considered an excellent material for electronic devices in aerospace applications. However, point defects generated by space radiation particles in InP electronic devices can cause their electrical performance to degrade severely. In this study, first-principles calculations are employed to investigate the stable structures of point defects in InP and calculate the migration energy values of nearest-neighbor defects. Four stable structures of In vacancies and three stable structures of P vacancies are identified by constructing the stable structures of point defects in different charge states. The migration process of vacancy defects is studied, revealing that the migration energy of P vacancies is higher than that of In vacancies. Moreover, charged vacancy defects exhibit higher migration energy values than neutral vacancies. Regarding the migration process of interstitial defects, it is found that the migration energy of interstitial defects is smaller than that of vacancy defects. In the calculation of In interstitial migration process with different charge states, two different migration processes are found. Besides, during the migration calculations of P interstitial, a special intermediate state is discovered, resulting in multiple paths migrating to the nearest-neighbor position in the migration energy barrier diagram. The research results are helpful to understand the formation mechanism and migration behavior of defects in InP materials, and are important in designing and manufacturing InP devices with long-term stable operation in space environment.

Benefiting from excellent high-frequency characteristics and superior radiation tolerance, InP is an indispensable material for next-generation high-speed communications, widely applied in optical communication, 6G radio frequency chips, AI optical interconnection, and aerospace radiation-hardened electronics. Although ion implantation greatly promotes the performance optimization of InP-based devices, it inevitably induces lattice displacement defects that degrade device reliability. Hence, quantitative evaluation of the threshold displacement energy (TDE) and dominant defect configurations in InP is essential. Our calculations reveal that the average threshold displacement energy is 18.20 eV for In atoms and 18.94 eV for P atoms. The E_d distributions for both In and P atoms predominantly lie below 30 eV and rarely exceed 40 eV. From 150 K to 900 K, In and P have a large mass difference and exhibit distinct temperature-dependent trends. The threshold displacement energy of In decreases with increasing temperature, whereas that of P rises as temperature increases. Based on the structural analysis of Frenkel pairs formed by displaced atoms, the dominant interstitial configurations are identified. These results provide detailed insights for damage evaluation and defect structure characterization in InP, benefiting ion implantation process optimization and radiation-hardening design of InP electronic devices.

本文采用双温模型耦合分子动力学的多尺度模拟方法，系统探究了快重离子速度效应对氮化镓（GaN）辐照损伤的微观影响机制。结果表明，在相近电子能损条件下，入射离子速度越低，更为局域化的能量沉积造成的晶格损伤程度越严重。以Ta离子辐照为例，当入射速度由6.47 MeV/u降至2.71 MeV/u时，由N₂气泡构成的连续柱状离子径迹更加显著，非晶核心区半径由2.21 nm扩大至2.46 nm，径迹中心N₂气泡的最大直径由3.2 nm增至3.6 nm。此外，离子径迹周围伴生的大量富镓缺氮的亚稳态闪锌矿相GaN纳米域，以及与之呈现强烈空间关联性的螺位错网络，两者密度均发生明显上升。这种由低速离子引发的高密度微观缺陷可能会提升垂直漏电通道的形成概率，进而成为加剧GaN器件单粒子烧毁风险的重要潜在因素。本研究为理解快重离子辐照下GaN器件的电学性能退化机理与抗辐射加固设计提供了重要的理论依据与数据支撑。

This research investigates atmospheric neutron-induced single event effects (SEEs) on advanced artificial intelligence (AI) chips during natural environment operation. The RK3588 neural processing unit (NPU) is the evaluated target chip, and its SEE is assessed through a combination of irradiation testing and software fault injection. During the irradiation test, the chip was exposed to a spectrum neutron at the China Spallation Neutron Source. Upon reaching a cumulative fluence of 8.25 × 10⁹ n·cm², a total of 14,018 soft errors were detected, of which 99.97% manifested as variations in target recognition accuracy and network inference latency. Among these variations, both detrimental effects (reduced target recognition accuracy or prolonged network inference time) and beneficial effects (enhanced target recognition accuracy or shortened network inference time) caused by single event effects were observed. In addition, atmospheric neutron single event effects were found to cause NPU operation suspension and system crashes. Based on the irradiation test results, failure predictions for neural processing units in real-world environments were estimated, and mitigation recommendations were proposed. Furthermore, software fault injections were employed to conduct in-depth analysis of detected soft errors during irradiation testing. This research provides support and references for the reliable application of artificial intelligence chips in natural environments.