A 3D Tb( iii )-based metal–organic framework has been synthesized as a luminescent sensor for the selective and reversible detection of Fe ³⁺ and ascorbic acid in water. Such sensing event showed good potential in biologically relevant applications.

Reversible single-crystal-to-single-crystal photoreaction of a coordination network exhibits switchable fluorescence for rewritable optical memory storage.

When silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors (MOSFETs) operate in the third quadrant, the surge current under extreme operating conditions hinders the body diode from replacing the external SiC Schottky barrier diode (SBD) as the freewheeling diode. Primarily, the channel activation of SiC MOSFET at $\textit{V}_\textbf{GS}$ $=$ 0 V is attributed to the body effect and the current conduction pathway within the p-well. Following this, an in-depth surge reliability analysis is conducted, contingent upon the varying structures of SiC MOSFET. The experimental result indicates that the surge capability of double-trench SiC MOSFET is inferior compared with planar SiC MOSFET and asymmetric SiC MOSFET. The impurity defects by the deep groove process and the design of the terminal layout are the critical constraints to the reliability of D-MOSFET under surge current stress. The interplay of static parameter degradation and scanning electron microscopy (SEM) investigations pinpoints two primary factors accountable for device failure. On the one hand, the gate and source terminals are short circuited due to the melting of metal electrodes caused by substantial surge currents. On the other hand, severe thermomechanical strains, incited by elevated thermal stresses attributable to surge currents, provoke substrate fissuring, and culminating in comprehensive short circuits bridging the gate, source, and drain terminals.

The dynamic avalanche reliability of 1200-V silicon carbide (SiC) power metal-oxide semiconductor field-effect transistors (MOSFETs) is studied in this article. The unclamped inductive switching (UIS) tests are conducted to locate failure points. An optimized thermal network model with the definition of the material above the epitaxial layer is used to simulate the avalanche process of SiC MOSFETs. The simulation and experiment results are matched, which verifies the validity of this model. Further simulation results show that a slight change in the doping profile of the p-well region will make the avalanche capability significantly different. Then, the effect of the deviation in cell parameters on the avalanche capability is studied by multicell simulation. The results demonstrate that uneven distribution of internal parameters makes the parasitic bipolar junction transistor (BJT) of some cells turn-on first, causing a significant concentration of current and heat in a very short time, and eventually forming hot spots often observed in failed devices.

In this article, a 4H-SiC metal-insulator-semiconductor-insulator-metal (MISIM) ultraviolet (UV) photodetector (PD) with a normal working temperature up to 550 °C, has been successfully fabricated and characterized for the first time. At 550 °C, the dark current of our fabricated MISIM remains at ~0.2 nA level and a record photo-to-dark current ratio (PDCR) of 62.7 is achieved at a reverse bias voltage of −15 V. Under 275 nm illumination, high responsivity (R) of 0.23 and 0.54 A/W have been achieved at room temperature (RT) and 550 °C, respectively. To the best of our knowledge, this is the best result reported for high-temperature UV detectors based on the 4H-SiC. This work is significant for developing high-temperature 4H-SiC-based UV PDs.