Compared with silicon, gallium nitride, silicon carbide, and other traditional semiconductors, gallium oxide (Ga₂O₃) who possesses, an ultrawide bandgap of approximately 5.0 eV and a higher breakdown field strength of approximately 8 MV/cm has attracted increasing attention from researchers, especially for the potential application in power devices. Moreover, Ga₂O₃ material has natural ultraviolet detection ability for photodetectors due to its ultrawide bandgap. These future commercial applications put forward an urgent require for high-quality epitaxial Ga₂O₃ material in an efficient growth method at a lower cost. Although there are some conventional methods for single crystal Ga₂O₃ film epitaxial growth such as MBE and MOCVD, these methods always need a vacuum growth environment and expensive equipment. As a fast-growing method, Mist-CVD gives the growth of Ga₂O₃ in a vacuum-free, process-simple, and low-cost method, which will greatly reduce the cost and facilitate the development of Ga₂O₃. This review has summarizes the Mist-CVD epitaxy growth mechanism of Ga₂O₃, recent progress in the Ga₂O₃ film epitaxial growth, and various device properties based on the Mist-CVD method. Our work aims to provide help for the development of Ga₂O₃ material growth and device applications.

In this article, a 4H-SiC metal-insulator-semiconductor-insulator-metal (MISIM) ultraviolet (UV) photodetector (PD) with a normal working temperature up to 550 °C, has been successfully fabricated and characterized for the first time. At 550 °C, the dark current of our fabricated MISIM remains at ~0.2 nA level and a record photo-to-dark current ratio (PDCR) of 62.7 is achieved at a reverse bias voltage of −15 V. Under 275 nm illumination, high responsivity (R) of 0.23 and 0.54 A/W have been achieved at room temperature (RT) and 550 °C, respectively. To the best of our knowledge, this is the best result reported for high-temperature UV detectors based on the 4H-SiC. This work is significant for developing high-temperature 4H-SiC-based UV PDs.

In this letter, an ultrahigh-temperature 4H-SiC Schottky ultraviolet (UV) photodiode (PD) using oxygen plasma pre-treatment (OPT) technology has been successfully fabricated and characterized. The PD has a high Schottky barrier height (SBH) of 1.94 eV. It shows excellent tolerance to extreme temperature with a dark current of $2.7\times 10\,\,^{\mathbf {-8}}$ A at −25 V and 600 °C. Under UV illumination, a record operating temperature of 600 °C is realized for the first time (PDCR = 3.5 at 600 °C, −25 V). Of note, the fabricated PD exhibits high responsivity that increases with the operating temperature from 0.17 A/W at room temperature (RT) to 0.52 A/W at 600 °C, at −25 V and 275-nm. Moreover, an expeditious response time of ms level is also realized from RT to 600 °C. These results demonstrate that the proposed 4H-SiC Schottky PD is advantageous for high-temperature UV-related applications.

The 4H-silicon carbide (SiC) junction barrier Schottky with field limiting rings (FLRs-JBS) termination was fabricated and analyzed to evaluate its radiation tolerance of the single-event burnout (SEB). Experimental and simulation results show that the SiC/SiO2/metal intersection is the most sensitive position in the FLRs-JBS. This work proposes that there are different mechanisms between the active and the terminal regions under heavy-ion irradiation for the first time. The simulation results show that the FLRs terminal area is more likely to burn out under single-event irradiation than the active area due to the serious current crowding effect. This work redefines the sensitive volume of the conventional FLRs-JBS under single-event irradiation, including the transition ring of the terminal zone, the part of the active area near the terminal zone, and the p+ island spacing of the active area.

The design of device termination is crucial for power devices. In this paper, we present a novel approach for designing termination in Si-based power devices using deep neural networks (DNN), taking the narrowed field-limiting ring (NFLR) as an example. Our proposed method can not only achieve a prediction accuracy of over 97% for breakdown voltage (BV), but also provide the device optimization design scheme automatically and intelligently. We believe that the proposed machine learning technology can significantly reduce the cost and enhance the efficiency of power device design, establishing itself as a promising method for power device design.

In this article, the effect of the different NO annealing time of 4H-SiC metal-oxide-semiconductor (MOS) capacitance and the n-type metal-oxide-semiconductor field effect transistors (n-MOSFETs) for the total dose radiation (TID) are studied. We show that after 1250 °C 60 min NO annealing, the device balances between the channel mobility and radiation resistance. The mechanism of the effect of TID on the 4H-SiC gate oxide is studied. And the mechanism of the ledge effect for PMOS is clarified. Furthermore, the electrical characteristics of the n-MOSFET affected by TID are also discussed, showing that TID mainly affects the shift of threshold voltage and inconspicuously affects the channel mobility.