Archana C M

Ms. Archana C M

orcid

Research Focus & Metrics

Academic Career Length

3Years (2024-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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1 August 2024 in Journal of Physics Communications
Verified
Journal Article
Open access
AMArchana C M
Archana C M
BABhaskar Awadhiya
Bhaskar Awadhiya
Yashwanth NYashwanth N
Yashwanth N
This paper investigates the ferroelectric-dielectric heterostructure with a fixed dielectric oxide and different ferroelectric oxides. This study is focused on the enhancement of capacitance, voltage amplification, and negative capacitance stabilization. In the first section of this study, an isolated ferroelectric capacitor with intrinsically unstable negative capacitance is examined for different ferroelectric oxides. To address the concern of instability a dielectric oxide is added in series to the ferroelectric capacitors. This addition raises the heterostructure’s total capacitance while stabilizing the negative capacitance. Silicon (Si), Zirconium (Zr), Aluminum (Al), and Strontium (Sr) doped hafnium oxide are used in heterostructure. It is found that the capacitance of Sr doped hafnium oxide is closely matched with the dielectric capacitance, therefore it provides the highest voltage amplification and enhanced capacitance among the other ferroelectric oxide considered.

20 August 2025 in Electronic Materials
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Journal Article
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AMArchana C M
Archana C M
PSPratheeksha S
Pratheeksha S
ABAkshatha Bhat
Akshatha Bhat
DMDr. Vikash Mishra
Dr. Vikash Mishra
Yashwanth NYashwanth N
Yashwanth N
SASachin Agrawal
Sachin Agrawal
This paper explores ferroelectric–dielectric heterostructures comprising a ferroelectric oxide (Lead Zirconium Titanate (PbZr1−xTix O3)) with a varying mole fraction and a fixed dielectric oxide (Silicon dioxide (SiO2)). The study aims to enhance capacitance, optimize voltage amplification, and achieve stable negative capacitance. An isolated ferroelectric capacitor is examined by varying mole fractions of ferroelectric oxide. The negative capacitance in isolated ferroelectric capacitor is highly unstable in nature. The instability problem is fixed and the overall capacitance of the heterostructure is raised while the negative capacitance is stabilized by connecting a dielectric oxide in series with the ferroelectric capacitor. PbZr1−xTix O3 is utilized as the ferroelectric oxide, with mole fractions x=0,0.2,0.4,0.6,0.8,1.0. Among the investigated mole fractions, ferroelectric oxide with x=0.6 offers the maximum voltage amplification and improved capacitance because its capacitance closely matches the dielectric capacitance. Also, dynamic response and temperature analysis of heterostructure are studied further.