Pratheeksha  S

Pratheeksha S

orcid

Research Focus & Metrics

Academic Career Length

2Years (2025-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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20 August 2025 in Electronic Materials
Verified
Journal Article
Open access
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AMArchana C M
Archana C M
PSPratheeksha S
Pratheeksha S
ABAkshatha Bhat
Akshatha Bhat
DMDr. Vikash Mishra
Dr. Vikash Mishra
Yashwanth NYashwanth N
Yashwanth N
SASachin Agrawal
Sachin Agrawal
This paper explores ferroelectric–dielectric heterostructures comprising a ferroelectric oxide (Lead Zirconium Titanate (PbZr1−xTix O3)) with a varying mole fraction and a fixed dielectric oxide (Silicon dioxide (SiO2)). The study aims to enhance capacitance, optimize voltage amplification, and achieve stable negative capacitance. An isolated ferroelectric capacitor is examined by varying mole fractions of ferroelectric oxide. The negative capacitance in isolated ferroelectric capacitor is highly unstable in nature. The instability problem is fixed and the overall capacitance of the heterostructure is raised while the negative capacitance is stabilized by connecting a dielectric oxide in series with the ferroelectric capacitor. PbZr1−xTix O3 is utilized as the ferroelectric oxide, with mole fractions x=0,0.2,0.4,0.6,0.8,1.0. Among the investigated mole fractions, ferroelectric oxide with x=0.6 offers the maximum voltage amplification and improved capacitance because its capacitance closely matches the dielectric capacitance. Also, dynamic response and temperature analysis of heterostructure are studied further.

1 December 2025 in Electronic Materials
Verified
Journal Article
Open access
PDF file
PSPratheeksha S
Pratheeksha S
BABhaskar Awadhiya
Bhaskar Awadhiya
DMDr. Vikash Mishra
Dr. Vikash Mishra
PMPRAMOD MARTHA
PRAMOD MARTHA
Sampath KumarSampath Kumar
Sampath Kumar
Yashwanth NYashwanth N
Yashwanth N
This work examines a cylindrical FE-DE heterostructure and compares its performance with that of a cylindrical FE-FE-DE heterostructure. It aims to maximize voltage amplification, increase capacitance, and attain a constant negative capacitance. First, the existence of negative capacitance is shown by analyzing isolated cylindrical ferroelectric capacitors. A cylindrical dielectric capacitor and a cylindrical ferroelectric capacitor are integrated in series to stabilize negative capacitance. Our results indicate that the capacitance of the FE-FE-DE stack, consisting of Si:HfO2 and Zr:HfO2, closely aligns with the dielectric capacitance. Consequently, enhanced performance is anticipated in comparison with the FE-DE arrangement. Additionally, the dynamic response of two distinct configurations was analyzed, yielding a comprehensive understanding of these heterostructures’ behavior.