In this article, we explore a noteworthy aspect of Negative Capacitance FETs (NCFETs): the influence of transistor feature size on hysteresis behavior. The ferroelectric capacitance is directly proportional to the channel length, so as the transistor is scaled down, both the ferroelectric and MOS capacitances decrease. Our analysis shows that at a channel length of 16 nm, the ferroelectric capacitance falls below the MOS capacitance, resulting in the emergence of hysteresis in the device characteristics. Additionally, we investigate how scaling the transistor feature size impacts key phenomena such as negative Drain-Induced Barrier Lowering (DIBL), negative differential resistance (NDR), and the negative body effect coefficient. We also evaluate the performance of an NCFET-based inverter across different channel lengths and find that the device with a 22 nm channel length exhibits the lowest static and dynamic power dissipation among the cases studied.

This paper explores ferroelectric–dielectric heterostructures comprising a ferroelectric oxide (Lead Zirconium Titanate $\left(\mathrm{P}\mathrm{b}\mathrm{Z}{\mathrm{r}}_{1-\mathrm{x}}\mathrm{T}{\mathrm{i}}_{\mathrm{x}}{\mathrm{O}}_3\right)$) with a varying mole fraction and a fixed dielectric oxide (Silicon dioxide $\left(\mathrm{S}\mathrm{i}{\mathrm{O}}_2\right)$). The study aims to enhance capacitance, optimize voltage amplification, and achieve stable negative capacitance. An isolated ferroelectric capacitor is examined by varying mole fractions of ferroelectric oxide. The negative capacitance in isolated ferroelectric capacitor is highly unstable in nature. The instability problem is fixed and the overall capacitance of the heterostructure is raised while the negative capacitance is stabilized by connecting a dielectric oxide in series with the ferroelectric capacitor. $\mathrm{P}\mathrm{b}\mathrm{Z}{\mathrm{r}}_{1-\mathrm{x}}\mathrm{T}{\mathrm{i}}_{\mathrm{x}}{\mathrm{O}}_3$ is utilized as the ferroelectric oxide, with mole fractions $x=0,0.2,0.4,0.6,0.8,1.0$. Among the investigated mole fractions, ferroelectric oxide with $x=0.6$ offers the maximum voltage amplification and improved capacitance because its capacitance closely matches the dielectric capacitance. Also, dynamic response and temperature analysis of heterostructure are studied further.