GaN high-electron-mobility transistors (HEMTs) are promising next-generation devices in the power electronics field which can coexist with silicon semiconductors, mainly in some radiation-intensive environments, such as power space converters, where high frequencies and voltages are also needed. Its wide band gap (WBG), large breakdown electric field, and thermal stability improve actual silicon performances. However, at the moment, GaN HEMT technology suffers from some reliability issues, one of the more relevant of which is the dynamic on-state resistance (R_{ON_dyn}) regarding power switching converter applications. In this study, we focused on the drain-to-source on-resistance (R_DSON) characteristics under ⁶⁰Co gamma radiation of two different commercial power GaN HEMT structures. Different bias conditions were applied to both structures during irradiation and some static measurements, such as threshold voltage and leakage currents, were performed. Additionally, dynamic resistance was measured to obtain practical information about device trapping under radiation during switching mode, and how trapping in the device is affected by gamma radiation. The experimental results showed a high dependence on the HEMT structure and the bias condition applied during irradiation. Specifically, a free current collapse structure showed great stability until 3.7 Mrad(Si), unlike the other structure tested, which showed high degradation of the parameters measured. The changes were demonstrated to be due to trapping effects generated or enhanced by gamma radiation. These new results obtained about R_{ON_dyn} will help elucidate trap behaviors in switching transistors.

The effects of ionizing radiation on field-programmable gate arrays (FPGAs) have been investigated in depth during the last decades. The impact of these effects is typically evaluated on implementations which have a deterministic behavior. In this article, two well-known true-random number generators (TRNGs) based on sampling jittery signals have been exposed to a Co-60 radiation source as in the standard tests for space conditions. The effects of the accumulated dose on these TRNGs, an in particular, its repercussion over their randomness quality (e.g., entropy or linear complexity), have been evaluated by using two National Institute of Standards and Technology (NIST) statistical test suites. The obtained results clearly show how the degradation of the statistical properties of these TRNGs increases with the accumulated dose. It is also notable that the deterioration of the TRNG (non-deterministic component) appears before that the degradation of the deterministic elements in the FPGA, which compromises the integrated circuit lifetime.

This work presents the evaluation of a new dual-core lockstep hybrid approach aimed to improve the fault tolerance in microprocessors. Our approach takes advantage of modern multicore processor resources to combine software-based lockstep with a custom hardware observer. The first is used to duplicate data and instruction flows; meanwhile, the second is in charge of the control-flow monitoring. The proposal has been implemented in a dual-core ARM microprocessor and validated with low-energy proton irradiation and emulated fault injection campaigns. The results show an improvement of one order of magnitude in the cross section of the benchmarks tested, even considering the worst case scenario.

This paper analyzes the suitability of single-instruction multiple data (SIMD) extensions of current microprocessors under radiation environments. SIMD extensions are intended for software acceleration, focusing mostly in applications that require high computational effort, which are common in many fields such as computer vision. SIMD extensions use a dedicated coprocessor that makes possible packing several instructions in one single extended instruction. Applications that require high performance could benefit from the use of SIMD coprocessors, but their reliability needs to be studied. In this paper, NEON, the SIMD coprocessor of ARM microprocessors, has been selected as a case study to explore the behavior of SIMD extensions under radiation. Radiation experiments of ARM CORTEX-A9 microprocessors have been accomplished with the objective of determining how the use of this kind of coprocessor can affect the system reliability.

This work analyzes the performance of the reduced precision redundancy (RPR) error mitigation technique using the fast Fourier transform (FFT) as a case study. To this purpose, several configurations of an FFT IP design were implemented in field-programmable gate array (FPGA) using reduced precision triple modular redundancy (RP-TMR) and tested under proton irradiation and fault injection. The cross section, the sensitivity to common-mode failures (CMFs), and the signal-to-noise ratio of these configurations were evaluated. The results of the radiation experiments and fault injection campaigns are in agreement and show that the RP-TMR technique may be used as an alternative to triple modular redundancy (TMR) if small errors can be tolerated, as it has a good performance in terms of error correction capabilities, area usage, and sensitivity to critical errors.

We investigate, through measurements and simulations, the possible direct ionization impact in the accelerator soft error rate, not considered in standard qualification approaches. Results show that, for a broad variety of state-of-the art commercial components considered in the 65 nm to 16 nm technological range, indirect ionization is still expected to dominate the overall soft-error rate in the accelerator mixed-field. However, the derived critical charges of the most sensitive parts, corresponding to ∼0.7 fC, are expected to be at the limit of rapid direct ionization dominance and soft-error increase.