Due to their high carrier mobility, thermal conductivity, and exceptional foldability, transition metal dichalcogenides (TMDs) present promising prospects in the realm of flexible semiconductor devices. Concurrently, tunneling field-effect transistors (TFETs) have garnered significant attention owing to their low energy consumption. This study investigates a TMD van der Waals heterojunction (VdWH) TFET, specifically by fabricating MoS₂ field-effect transistors (FETs), WSe₂ FETs, and MoS₂/WSe₂ VdWH TFETs. The N-type characteristics of the MoS₂ and P-type characteristics of WSe₂ are established through an analysis of the electrical characteristics of the respective FETs. Finally, we analyze the energy band and electrical characteristics of the MoS₂/WSe₂ VdWH TFET, which exhibits a drain current switching ratio of 10⁵. This study provides valuable insights for the development of novel low-power devices.