In this paper, we share our practical experience gained during the development of CMOS-MEMS (Complementary Metal-Oxide Semiconductor Micro Electro Mechanical Systems) devices in IHP SG25 technology. The experimental prototyping process is illustrated with examples of three CMOS-MEMS chips and starts from rough process exploration and characterization, followed by the definition of the useful MEMS design space to finally reach CMOS-MEMS devices with inertial mass up to 4.3 $\mathsf{\mu }$g and resonance frequency down to 4.35 kHz. Furthermore, the presented design techniques help to avoid several structural and reliability issues such as layer delamination, device stiction, passivation fracture or device cracking due to stress.

This article presents a mixed-signal closed-loop control system for Lorentz force resonant MEMS magnetometers. The control system contributes to 1) the automatic phase control of the loop, that allows start-up and keeps self-sustained oscillation at the MEMS resonance frequency, and 2) output offset reduction due to electrostatic driving by selectively disabling it. The proposed solution proof-of-concept has been tested with a Lorentz force based MEMS magnetometer. The readout electronic circuitry has been implemented on a printed circuit board with off-the-shelf components. Digital control has been implemented in an FPGA coded with VHDL. When biased with 1 V and a driving current of 300 μArms, the device shows 9:75 pA=μT sensitivity and total sensor white noise of 550 nT= p√Hz. Offset when electrostatic driving is disabled is 793 μT, which means a 40:1electrostatic driving is enabled. Moreover, removing electrostatic driving does not worsen bias instability, which is lower than 125 nT in both driving cases.