A compact model is developed to describe degradation behaviors of the polarization–voltage (P–V) and current–voltage (I–V) characteristics in Hf_0.2Zr_0.8O₂ (HZO) anti-ferroelectric (AFE) capacitors. It is confirmed that, during field cycling, the evolution of both P–V and I–V characteristics follows the similar rule related to the Kohlrausch–Williams/Watts (KWWs) random-walk relaxation behavior of the switching polarization. The opposite but similar behavior of voltage shift in both characteristics suggests that charge injection should be an underlying mechanism for the observed polarization imprint. The degradation is attributed to the increasing charge defects at the interface between interfacial layer (IL) and the electrode.

The conventional static imprint effect in Hf_xZr_1−xO₂ (HZO) ferroelectric (FE) devices, which degrades data retention, is generally characterized by a shift in the hysteresis loop along the electric field axis. Unlike the static imprint effect, the dynamic imprint effect emerges under dynamic electric fields or actual operating conditions, making the FE film exceptionally sensitive to switching pulse parameters and domain history. In HZO anti-ferroelectric (AFE) devices, this dynamic imprint effect alters the coercive field distribution associated with domain switching and poses a significant challenge to long-term stable device operation. This study systematically investigates the dynamic imprint effect and its recovery process using a comprehensive integration of first-order reversal curve (FORC) analysis, transient current-voltage (I-V), and polarization-voltage (P-V) characterization. By analyzing localized imprint behavior under sub-cycling conditions, mechanisms and recovery pathways of imprint in AFE devices are proposed. Finally, possible physics-based mechanisms describing imprint behaviors and recovery behaviors are discussed, providing insights for optimizing AFE memory technology performance and reliability.