Defects induced by boron doping in diamond layers were studied by transmission electron microscopy. The existence of a critical boron doping level above which defects are generated is reported. This level is found to be dependent on the CH4/H2 molar ratios and on growth directions. The critical boron concentration lied in the 6.5–17.0 × 1020at/cm3 range in the ⟨111⟩ direction and at 3.2 × 1021 at/cm3 for the ⟨001⟩ one. Strain related effects induced by the doping are shown not to be responsible. From the location of dislocations and their Burger vectors, a model is proposed, together with their generation mechanism.

Heavily boron doped diamond epilayers with thicknesses ranging from 40 to less than 2 nm and buried between nominally undoped thicker layers have been grown in two different reactors. Two types of [100]-oriented single crystal diamond substrates were used after being characterized by X-ray white beam topography. The chemical composition and thickness of these so-called delta-doped structures have been studied by secondary ion mass spectrometry, transmission electron microscopy, and spectroscopic ellipsometry. Temperature-dependent Hall effect and four probe resistivity measurements have been performed on mesa-patterned Hall bars. The temperature dependence of the hole sheet carrier density and mobility has been investigated over a broad temperature range (6 K < T < 450 K). Depending on the sample, metallic or non-metallic behavior was observed. A hopping conduction mechanism with an anomalous hopping exponent was detected in the non-metallic samples. All metallic delta-doped layers exhibited the same mobility value, around 3.6 ± 0.8 cm2/Vs, independently of the layer thickness and the substrate type. Comparison with previously published data and theoretical calculations showed that scattering by ionized impurities explained only partially this low common value. None of the delta-layers showed any sign of confinement-induced mobility enhancement, even for thicknesses lower than 2 nm

To develop further diamond related devices, the concentration and spatial location of dopants should be controlled down to the nanometer scale. Scanning transmission electron microscopy using the high angle annular dark field mode is shown to be sensitive to boron doping in diamond epilayers. An analytical procedure is described, whereby local boron concentrations above 1020 cm−3 were quantitatively derived down to nanometer resolution from the signal dependence on thickness and boron content. Experimental boron local doping profiles measured on diamond p−/p++/p− multilayers are compared to macroscopic profiles obtained by secondary ion mass spectrometry, avoiding reported artefacts.

Doping diamond layers for electronic applications has become straightforward during the last two decades. However, dislocation generation in diamond during the microwave plasma enhanced chemical vapor deposition growth process is still not fully understood. This is a truly relevant topic to avoid for an optimal performance of any device, but, usually, it is not considered when designing diamond structures for electronic devices. The incorporation of a dopant, here boron, into a lattice as close as that of diamond, can promote the appearance of dislocations in the epilayer. The present contribution analyzes the different processes that can take place in this epilayer and gives some rules to avoid the formation of dislocations, based on the comparison of the different dislocation generation mechanisms. Indeed, competitive mechanisms, such as doping atom proximity effect and lattice strain relaxation, are here quantified for heavily boron-doped diamond epilayers. The resulting growth condition windows for defect-free heavily doped diamond are here deduced, introducing the diamond parameters and its lattice expansion in several previously published critical thickness (h_c) and critical doping level relationships for different doping levels and growth conditions. Experimental evidence supports the previously discussed thickness-doping-growth condition relationships. Layers with and without dislocations reveal that not only the thickness but also other key factors such as growth orientation and growth parameters are important, as dislocations are shown to be generated in epilayers with a thickness below the People and Bean critical thickness.