The ability to precisely measure magnetic fields under extreme operating conditions is becoming increasingly important as a result of the advent of modern diagnostics for future magnetic-confinement fusion devices. These conditions are recognized as strong neutron radiation and high temperatures (up to 350 °C). We report on the first experimental comparison of the impact of neutron radiation on graphene and indium antimonide thin films. For this purpose, a 2D-material-based structure was fabricated in the form of hydrogen-intercalated quasi-free-standing graphene on semi-insulating high-purity on-axis 4H-SiC(0001), passivated with an Al₂O₃ layer. InSb-based thin films, donor doped to varying degrees, were deposited on a monocrystalline gallium arsenide or a polycrystalline ceramic substrate. The thin films were covered with a SiO₂ insulating layer. All samples were exposed to a fast-neutron fluence of ≈$7\times {10}^{17}$ cm⁻². The results have shown that the graphene sheet is only moderately affected by neutron radiation compared to the InSb-based structures. The low structural damage allowed the graphene/SiC system to retain its electrical properties and excellent sensitivity to magnetic fields. However, InSb-based structures proved to have significantly more post-irradiation self-healing capabilities when subject to proper temperature treatment. This property has been tested depending on the doping level and type of the substrate.

Modern two-dimensional carbon materials are being increasingly studied as potential magnetic field sensors for use in environments with harmful radiation, such as neutron radiation present in future fusion reactors. Potential radiation resistance is also demonstrated by classical semiconductor thin-film materials, after appropriate doping. A necessary condition for the potential neutron-resistant sensor is high-temperature stability. In this letter, we bring together two leading high-temperature sensing platforms: graphene-based and Sn-doped InSb-based. Our study focuses on their thermal stability under identical high-temperature and time conditions. We utilized long-term annealing procedures combined with the simultaneous measurement of the Hall effect to reflect both, the temperature conditions during radiation tests of these platforms performed recently in the MARIA research nuclear reactor, as well as post-radiation temperature treatment. We showed that long-term annealing at fixed temperature can affect the graphene-based platform to a greater extent, however, variable temperature tests showed better stability of this system. The InSb-based platform, on the other hand, exhibits much better temperature stability when operating up to $200 {}^{\circ }\mathrm{C}$

Magnetic field sensors, based on the Hall effect, in mass production have currently a standard operating temperature limit of 150 ${}^{\circ }\mathrm{C}$ . There are sensors designed for specific purposes that can function within a limited range of up to 225 ${}^{\circ }\mathrm{C}$ , or even at the temperature of liquid nitrogen or liquid helium. The technology for the production of magnetic field sensors enabling operation in industrial conditions at temperatures significantly exceeding 225 ${}^{\circ }\mathrm{C}$ or in the full range of temperatures from cryogenics to elevated temperatures (reaching 350 ${}^{\circ }\mathrm{C}$ ) has not yet been developed. In this letter, we present a reliable and high-quality magnetic field sensor that is capable of functioning under a wide range of temperatures. The sensor was developed using mainly the academic infrastructure of the Poznań University of Technology and can be suitable for industrial use.

Studies on two-dimensional materials (such as topological insulators or transition metal dichalcogenides) have shown that they exhibit unique properties, including high charge carrier mobility and tunable bandgaps, making them attractive for next-generation electronics. Some of these materials (e.g., HfSe₂) also offer thickness-dependent bandgap engineering. However, the standard device fabrication techniques often introduce processing contamination, which reduces device efficiency. In this paper, we present a modified mechanical exfoliation technique, the Reversed Structuring Procedure, which enables the fabrication of hybrid systems based on 2D microflakes with improved interface cleanness and contact quality. Hall effect measurements on Bi₂Se₃ and HfSe₂ devices confirm enhanced electrical performance, including the decrease in the measured total resistance. We also introduce a novel Star-Shaped Electrode Structure, which allows for accurate Hall measurements and the exploration of geometric magnetoresistance effects within the same device. This dual-purpose geometry enhances the flexibility and demonstrates broader functionality of the proposed fabrication method. The presented results validate the Reversed Structuring Procedure method as a robust and versatile approach for laboratory test-platforms for electronic applications of new types of layered materials whose fabrication technology is not yet compatible with CMOS.

2D/3D heterostructures provide a powerful platform for uncovering how reduced dimensionality governs radiation response. While two-dimensional (2D) materials such as graphene, transition metal dichalcogenides, and MXenes have demonstrated notable structural resilience to radiation, fundamental differences in their radiation response compared with bulk three-dimensional (3D) crystals remain largely unverified. Here, we fabricate patterned a - Al 2 O 3 /graphene/H-intercalated SiC(0001) heterostructures and expose them to fast neutrons (1–2 MeV) across fluences from 1.9 × 10 17 to 6.5 × 10 18 n / cm 2 . The results reveal a striking disparity: despite the 3D environment, graphene accumulates damage 69–273 times more slowly than SiC, with its resilience further enhanced at high fluences due to early saturation, soft limited to only 0.0064% at 1.3 × 10 19 n / cm 2 . This behavior is attributed to a two-channel defect accumulation model in 2D materials, involving interfacial evolution that dominates the early-stage response when the interface is chemically active, and direct lattice damage from atomic displacements, which persists but remains comparatively weak. These findings establish 2D lattices as fundamentally more radiation-resistant than 3D crystals and demonstrate that their advantages persist in realistic device architectures. Harnessing this resilience offers orders-of-magnitude improvements in structural stability for technologies operating under extreme irradiation, including fusion and fission reactors, particle accelerators, and aerospace systems.