This study systematically investigates the impact of Cu²⁺ doping on the structural, magnetic, and magnetocaloric properties of Cu_xCo_1−xCr₂O₄ nanoparticles synthesized via a solution combustion method. Cu incorporation up to x = 20% induces a progressive structural transformation from a cubic spinel to a trigonal corundum phase, as confirmed by X-ray diffraction and Raman spectroscopy. The doping process also leads to increased particle size, improved crystallinity, and reduced agglomeration. Magnetic measurements reveal a transition from hard to soft ferrimagnetic behavior with increasing Cu content, accompanied by a notable rise in the Curie temperature from 97.7 K (x = 0) to 140.2 K (x = 20%). The magnetocaloric effect (MCE) is significantly enhanced at higher doping levels, with the 20% Cu-doped sample exhibiting a maximum magnetic entropy change (−ΔS_M) of 2.015 J/kg-K and a relative cooling power (RCP) of 58.87 J/kg under a 60 kOe field. Arrott plot analysis confirms that the magnetic phase transitions remain second-order in nature across all compositions. These results demonstrate that Cu doping is an effective strategy for tuning the magnetostructural response of CoCr₂O₄ nanoparticles, making them promising candidates for low-temperature magnetic refrigeration applications.

The features of eight-period In0.2Ga0.8N/GaN quantum wells (QWs) with silicon (Si) doping in the first two to five quantum barriers (QBs) in the growth sequence of blue light-emitting diodes (LEDs) are explored. Epilayers of QWs’ structures are grown on 20 pairs of In0.02Ga0.98N/GaN superlattice acting as strain relief layers (SRLs) on patterned sapphire substrates (PSSs) by a low-pressure metal-organic chemical vapor deposition (LP-MOCVD) system. Temperature-dependent photoluminescence (PL) spectra, current versus voltage (I-V) curves, light output power versus injection current (L-I) curves, and images of high-resolution transmission electron microscopy (HRTEM) of epilayers are measured. The consequences show that QWs with four Si-doped QBs have larger carrier localization energy (41 meV), lower turn-on (3.27 V) and breakdown (− 6.77 V) voltages, and higher output power of light of blue LEDs at higher injection current than other samples. Low barrier height of QBs in a four-Si-doped QB sample results in soft confinement potential of QWs and lower turn-on and breakdown voltages of the diode. HRTEM images give the evidence that this sample has relatively diffusive interfaces of QWs. Uniform spread of carriers among eight QWs and superior localization of carriers in each well are responsible for the enhancement of light output power, in particular, for high injection current in the four-Si-doped QB sample. The results demonstrate that four QBs of eight In0.2Ga0.8N/GaN QWs with Si doping not only reduce the quantum-confined Stark effect (QCSE) but also improve the distribution and localization of carriers in QWs for better optical performance of blue LEDs.