The application range of fused silica optical components can be expanded and the cost of fused silica components can be reduced by depositing the same material film on fused silica substrate. However, due to the different manufacturing process, the performance of ALD SiO₂ film is lower than that of fused silica substrate, which also limits the use of this process. In this paper, ALD SiO₂ film with different thicknesses were deposited, and then the structure and properties were tested. Finally, the ALD SiO₂ film was treated via the annealing process. Transmission electron microscopy (TEM) showed that the ALD SiO₂ film had good compactness and substrate adhesion. The Raman spectra showed that the ALD SiO₂ film and substrate had the same structure, with only slight differences. The XRD pattern showed that ALD-fused silica did not crystallize before or after annealing. The infrared spectra showed that there was an obvious Si-OH defect in the ALD SiO₂ film. The laser damage showed that the ALD SiO₂ film had a much lower damage threshold than the fused silica substrate. The nanoindentation showed that the mechanical properties of the ALD SiO₂ film were much lower than those of the fused silica substrate. After a low-temperature annealing treatment, the ALD SiO₂ film Si-OH defect was reduced, the ALD SiO₂ film four-member ring content was increased, the elastic modulus of the ALD SiO₂ film was increased from 45.025 GPa to 68.025 GPa, the hardness was increased from 5.240 GPa to 9.528 GPa, and the ALD SiO₂ film damage threshold was decreased from 5.5 J/cm² to 1.3 J/cm².

Fused silica was polished to a high quality by a CO₂ laser beam with a rapid scanning rate. The rapid scanning rate produced a line laser heat source, resulting in a “polishing line” during the polishing process. The Taguchi method was used to evaluate the comprehensive influence of polishing process parameters on the polishing qualities. Four factors, namely the length of laser reciprocating scanning (A), laser beam scanning speed (B), feed speed (C), and defocusing amount (D), were investigated in this study. The optimal process parameter combination (A1B1C1D1) was obtained. The surface roughness of fused silica was reduced from Ra = 0.157 μm to 0.005 μm. Through analysis of variance (ANOVA), it was found that laser beam scanning speed (B) had a significant influence on the polishing quality. The interaction of the two factors plays a decisive role in the determination of the best process parameters, and the influence of other multi-factor interaction can be ignored; the interaction between A × B is the largest, with a contribution of 42.69%.

Poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) is a commonly used conductive polymer in organic optoelectronic devices. The conductivity and work function of the PEDOT:PSS are two important parameters that significantly determine the performance of the associated optoelectronic device. Traditionally, some solvents were doped in PEDOT:PSS solution or soaked in PEDOT:PSS film to improve its electrical conductivity, but they damaged the integrity of PEDOT:PSS and reduce the film’s work function. Herein, for the first time, we use femtosecond laser irradiation to modify the electrical conductivity and work function of PEDOT:PSS film. We proposed that the femtosecond laser irradiation could selectively remove the superficial insulative PSS, thereby improving the electrical conductivity of the film. The femtosecond laser-irradiated PEDOT:PSS film was further employed as a hole injection layer within cutting-edge perovskite light-emitting diodes (PeLEDs). A maximum luminosity of 950 cd/m² was obtained in PeLEDs irradiated by femtosecond laser light in thin films, which is five times higher than that of the controlled device. Moreover, the external quantum efficiency of the devices was also increased from 4.6% to 6.3%. This work paved a cost-effective way to regulate the electrical properties of the PEDOT:PSS film.

This study proposes a novel wavelength-tuning common-path digital holographic microscopy technique for quantitative phase imaging of functional micro-optics components. The proposed technique is immune to vibration and can reduce system error. In the proposed configuration, a parallel glass plate was inserted into the light path to create two identical test beams, which passed through a specially designed window filter. In this process, one beam serves as the object beam, while the other is diffracted to produce an ideal spherical wave front (the reference beam). A wavelength tunable laser was used as the light source to generate phase-shifting digital holograms. Structural information for the functional micro-optics components was then extracted using a classical four-step phase-shift algorithm. The viability of the proposed technique was assessed by measuring a micro-optics array.

This paper proposes a real-time compensated pentaprism scanning wavefront detection method to achieve real-time compensation for scanning errors occurring during prism movement along a guide rail. The method is based on existing pentaprism scanning wavefront detection technology and it is realized by applying self-collimation-based three-dimensional error compensation. Using theoretical and data analyses of a detection experiment, the reliability of the optimized pentaprism scanning detection method is verified, thus effectively ensuring the reasonable estimation of the interferometry surface measurement uncertainty.

To address the issues of heat accumulation and potential thermal damage during radio-frequency (RF) ion beam machining of KDP crystals, an energy deposition model and a temperature field model were developed based on Sigmund’s sputtering theory, a Gaussian beam distribution model, and heat conduction theory. Combined with the Monte Carlo method, the effects of incident energy, incident angle, and ion species on the disturbed layer depth and sputtering yield were systematically investigated. Furthermore, the influences of beam divergence angle and deflection angle on the surface energy deposition density distribution were analyzed. On this basis, the evolution of the temperature field and thermal stress field in KDP crystals under both stationary and linearly moving Gaussian surface heat sources was numerically simulated. The results indicate that the proposed model can effectively characterize the thermal response during ion beam machining of KDP crystals. The disturbed layer depth, sputtering yield, and energy deposition density distribution exhibit pronounced sensitivity to processing parameters. Under a stationary heat source, significant local heat accumulation and stress concentration tend to occur on the material surface. In contrast, a moving heat source can mitigate excessive temperature rise at a single location to some extent, although it also produces a heat-affected zone extending along the scanning path. These findings provide a theoretical basis for the optimization of low-damage RF ion beam machining parameters for KDP crystals.