CaMnO ₃ is a parent compound for numerous multicomponent manganese perovskite oxides. Its crystallographic data are of primary importance in the science and technology of functional CaMnO ₃ -based materials. In the present study, data were collected for a CaMnO ₃ sample at 302 K. The crystal structure refinement yields accurate absolute values of lattice parameters, a =5.281 59(4) Å, b =7.457 30(4) Å, and c =5.267 48(4) Å, leading to orthorhombic distortion of ( c/a , √2 c/b )=(0.997 33,0.998 95). The orthorhombic distortion of the CaMnO ₃ structure is discussed on the basis of comparison of our unit-cell size with data already published. At a graphical representation of the distortion, it is observed that there is a considerable scatter of the distortion values among the literature data but, interestingly, a considerable fraction of experimental results (including the present one) for stoichiometric samples are grouped around the distortion ( c/a , √2 c/b )=(0.9973,0.9990), which lies close to a maximum in the extent of orthorhombicity. The influence of off-stoichiometry on the orthorhombic distortion is discussed on the basis of available experimental data. Simulations, employing a mean-field approach for low temperatures, predict an increase in cell volume and structural distortions with the concentration of oxygen vacancies when the additional electrons are localized on the manganese. A simple model of delocalization produced the opposite effect, which is expected to combine with lattice vibrations to recover the cubic phase at high temperatures.

Systems of solid solutions Bi1 − xCa xFeO3 (I) and Bi1 − xCa xFeO1 − xTi xO3(II) have been obtained and their properties have been studied using neutronography and Mössbauer spectroscopy;...

The results of colossal magnetoresistance (CMR) properties of La_1-xSr_xMn_yO₃ (LSMO) films grown by the pulsed injection MOCVD technique onto an Al₂O₃ substrate are presented. The grown films with different Sr (0.05 ≤ x ≤ 0.3) and Mn excess (y > 1) concentrations were nanostructured with vertically aligned column-shaped crystallites spread perpendicular to the film plane. It was found that microstructure, resistivity, and magnetoresistive properties of the films strongly depend on the strontium and manganese concentration. All films (including low Sr content) exhibit a metal–insulator transition typical for manganites at a certain temperature, T_m. The T_m vs. Sr content dependence for films with a constant Mn amount has maxima that shift to lower Sr values with the increase in Mn excess in the films. Moreover, the higher the Mn excess concentration in the films, the higher the T_m value obtained. The highest T_m values (270 K) were observed for nanostructured LSMO films with x = 0.17–0.18 and y = 1.15, while the highest low-field magnetoresistance (0.8% at 50 mT) at room temperature (290 K) was achieved for x = 0.3 and y = 1.15. The obtained low-field MR values were relatively high in comparison to those published in the literature results for lanthanum manganite films prepared without additional insulating oxide phases. It can be caused by high Curie temperature (383 K), high saturation magnetization at room temperature (870 emu/cm³), and relatively thin grain boundaries. The obtained results allow to fabricate CMR sensors for low magnetic field measurement at room temperature.

The pressure dependence, up to 11.3 kbar, of basic parameters of the superconducting state, such as the critical temperature (T(c)), the lower and the upper critical fields, the coherence length, the penetration depth, and their anisotropy, was determined from magnetic measurements performed for two single-crystalline samples of FeTe(0.5)Se(0.5). We have found pressure-induced enhancement of all of the superconducting state properties, which entails a growth of the density of superconducting carriers. However, we noticed a more pronounced increase in the superconducting carrier density under pressure than that in the critical temperature which may indicate an appearance of a mechanism limiting the increase of T(c) with pressure. We have observed that the critical current density increases under pressure by at least one order of magnitude.

Elastic properties of CaMnO₃ are of primary importance in the science and technology of CaMnO₃-based perovskites. From X-ray diffraction experiments performed at pressures up to 100 kbar using a diamond-anvil cell to hydrostatically compress our sample, a bulk modulus, K ₀, of 1734(96) kbar was obtained after fitting parameters to the third-order Birch–Murnaghan equation of state. Mean field, semiclassical simulations predict, for the first time, the third-order equation-of-state parameters and show how the bulk modulus increases with pressure (the zero pressure value being 2062.1 kbar) and decreases with the extent of nonstoichiometry caused by the formation of oxygen vacancies. These trends are amplified for the shear modulus. A more accurate model that allows for the explicit reduction of Mn ions, or localization of excess electrons, yields qualitatively similar results. The experimental and calculated axial ratios show the same trends in their variation with rising pressure.