The results of colossal magnetoresistance (CMR) properties of La_1-xSr_xMn_yO₃ (LSMO) films grown by the pulsed injection MOCVD technique onto an Al₂O₃ substrate are presented. The grown films with different Sr (0.05 ≤ x ≤ 0.3) and Mn excess (y > 1) concentrations were nanostructured with vertically aligned column-shaped crystallites spread perpendicular to the film plane. It was found that microstructure, resistivity, and magnetoresistive properties of the films strongly depend on the strontium and manganese concentration. All films (including low Sr content) exhibit a metal–insulator transition typical for manganites at a certain temperature, T_m. The T_m vs. Sr content dependence for films with a constant Mn amount has maxima that shift to lower Sr values with the increase in Mn excess in the films. Moreover, the higher the Mn excess concentration in the films, the higher the T_m value obtained. The highest T_m values (270 K) were observed for nanostructured LSMO films with x = 0.17–0.18 and y = 1.15, while the highest low-field magnetoresistance (0.8% at 50 mT) at room temperature (290 K) was achieved for x = 0.3 and y = 1.15. The obtained low-field MR values were relatively high in comparison to those published in the literature results for lanthanum manganite films prepared without additional insulating oxide phases. It can be caused by high Curie temperature (383 K), high saturation magnetization at room temperature (870 emu/cm³), and relatively thin grain boundaries. The obtained results allow to fabricate CMR sensors for low magnetic field measurement at room temperature.

Perovskite-type La:BaSnO₃ (LBSO) has been drawing considerable attention due to its high electron mobility and optical transparency. Its thin film electrical properties, however, remain inferior to those of single crystals. This work investigates the thermal post-treatment process of films deposited using the metalorganic chemical vapor deposition method to improve the electrical properties of different stoichiometry films, and demonstrates the modification of thin film’s structural properties using short and excessive annealing durations in vacuum conditions. Using vacuum post-treatment, we demonstrate the improvement of electrical properties in Ba-rich, near-stoichiometric, and Sn-rich samples with a maximum electron mobility of 116 cm²V⁻¹s⁻¹ at r.t. However, the improvement of electrical properties causes surface morphology and internal structural changes, which depend on thin film composition. At temperatures of 900 °C–1400 °C the volatile nature of LBSO constituting elements is described, which reveals possible deterioration mechanisms of thin LBSO air. At higher than 1200 °C, LBSO film’s decomposition rate increases exponentially. Thin film structure evolution and previously unreported decomposition is demonstrated by Ba and La diffusion to the substrate, and by evaporation of SnO-SnO_x species.

The results of colossal magnetoresistance (CMR) properties of La_0.83Sr_0.17Mn_1.21O₃ (LSMO) films grown by pulsed injection MOCVD technique onto various substrates are presented. The films with thicknesses of 360 nm and 60 nm grown on AT-cut single crystal quartz, polycrystalline Al₂O₃, and amorphous Si/SiO₂ substrates were nanostructured with column-shaped crystallites spread perpendicular to the film plane. It was found that morphology, microstructure, and magnetoresistive properties of the films strongly depend on the substrate used. The low-field MR at low temperatures (25 K) showed twice higher values (−31% at 0.7 T) for LSMO/quartz in comparison to films grown on the other substrates (−15%). This value is high in comparison to results published in literature for manganite films prepared without additional insulating oxides. The high-field MR measured up to 20 T at 80 K was also the highest for LSMO/quartz films (−56%) and demonstrated the highest sensitivity S = 0.28 V/T at B = 0.25 T (voltage supply 2.5 V), which is promising for magnetic sensor applications. It was demonstrated that Mn excess Mn/(La + Sr) = 1.21 increases the metal-insulator transition temperature of the films up to 285 K, allowing the increase in the operation temperature of magnetic sensors up to 363 K. These results allow us to fabricate CMR sensors with predetermined parameters in a wide range of magnetic fields and temperatures.

A measurement system based on the colossal magnetoresistance CMR-B-scalar sensor was developed for the measurement of short-duration high-amplitude magnetic fields. The system consists of a magnetic field sensor made from thin nanostructured manganite film with minimized memory effect, and a magnetic field recording module. The memory effect of the La_1−xSr_x(Mn_1−yCo_y)_zO₃ manganite films doped with different amounts of Co and Mn was investigated by measuring the magnetoresistance (MR) and resistance relaxation in pulsed magnetic fields up to 20 T in the temperature range of 80–365 K. It was found that for low-temperature applications, films doped with Co (LSMCO) are preferable due to the minimized magnetic memory effect at these temperatures, compared with LSMO films without Co. For applications at temperatures higher than room temperature, nanostructured manganite LSMO films with increased Mn content above the stoichiometric level have to be used. These films do not exhibit magnetic memory effects and have higher MR values. To avoid parasitic signal due to electromotive forces appearing in the transmission line of the sensor during measurement of short-pulsed magnetic fields, a bipolar-pulsed voltage supply for the sensor was used. For signal recording, a measurement module consisting of a pulsed voltage generator with a frequency up to 12.5 MHz, a 16-bit ADC with a sampling rate of 25 MHz, and a microprocessor was proposed. The circuit of the measurement module was shielded against low- and high-frequency electromagnetic noise, and the recorded signal was transmitted to a personal computer using a fiber optic link. The system was tested using magnetic field generators, generating magnetic fields with pulse durations ranging from 3 to 20 μs. The developed magnetic field measurement system can be used for the measurement of high-pulsed magnetic fields with pulse durations in the order of microseconds in different fields of science and industry.

Precision control of resistivity/conductivity of LaNiO₃ (LNO) films is essential for their integration as electrodes in the functional heterostructures. This becomes possible if the relationship between processing parameters–composition–structure–resistivity is determined. LaNiO₃ films were deposited by three different chemical vapor deposition methods using different precursor supply systems: direct liquid delivery, pulsed liquid injection, and aerosol generation. The possibilities to ameliorate the efficiency of precursor evaporation and of film growth were studied. The relationship between deposition conditions and composition was determined. Detailed analysis of the epitaxial growth of LNO films on cubic and trigonal substrates and the influence of the rhombohedral distortion on the microstructural quality was done. The resistivity of LaNiO₃ films, grown by chemical vapor deposition, was mainly defined by microstructural defects and La/Ni composition. The high epitaxial quality LaNiO₃/LaAlO₃ films with nearly stoichiometric La/Ni ratio presented low resistivity, which was very close to that of bulk LaNiO₃. Their annealing in oxygen atmosphere had little effect on the resistivity, which suggests a minor presence of oxygen vacancies in the as-grown films.