Jonghoo Park

Prof. Jonghoo Park

1. Department of Electrical Engineering, Kyungpook National University, Daegu, South Korea
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Research Focus & Metrics

Academic Career Length

15Years (2012-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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4 June 2018 in Advanced Materials Interfaces
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Journal Article
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TKTaeWan Kim
TaeWan Kim
HPHyeji Park
Hyeji Park
DJDaeHwa Joung
DaeHwa Joung
DKDongHwan Kim
DongHwan Kim
RLRochelle Lee
Rochelle Lee
SKSang-Woo Kang
Sang-Woo Kang

28 April 2020 in Nanomaterials
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Journal Article
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BMBharath Kumar Mareddi
Bharath Kumar Mareddi
MAMohammad Awwal Adeshina
Mohammad Awwal Adeshina
DKDaekyung Kang
Daekyung Kang
YJYoungho Jee
Youngho Jee
TKTaewan Kim
Taewan Kim
JPJonghoo Park
Jonghoo Park
We investigated the effect of reduced graphene oxide (rGO) doping on the birefringence of 5CB liquid crystal (LC). The characteristics of the synthesized rGO and LC-rGO composite with different rGO concentrations were analyzed by atomic force microscopy, X-ray photoelectron spectroscopy, white light polarized microscopy, voltage-dependent transmission measurement, and differential scanning calorimetry. We found that doping LC with an appropriate concentration of rGO enhances the birefringence of the LC. This is mainly due to the improved anisotropy of polarizability, which stems from the high shape anisotropy of rGO. However, the aggregation of rGO reduces the birefringence by decreasing the anisotropy of polarizability as well as the order parameter. Our study shows the promising potential of LC-rGO for developing various electro-optic devices that offer improved electro-optic effects.

10 April 2025 in Crystal Growth & Design
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Journal Article
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AOAbdulazeez M. Ogunleye
Abdulazeez M. Ogunleye
MAMohammad Awwal Adeshina
Mohammad Awwal Adeshina
GKGunWoo Kim
GunWoo Kim
HKHyunmin Kim
Hyunmin Kim
JPJonghoo Park
Jonghoo Park

29 December 2022 in ACS Applied Electronic Materials
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Journal Article
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GOGuen Hyung Oh
Guen Hyung Oh
JAJin Gi An
Jin Gi An
SKSang-Il Kim
Sang-Il Kim
JSJae Cheol Shin
Jae Cheol Shin
JPJonghoo Park
Jonghoo Park
TKTaeWan Kim
TaeWan Kim

25 January 2012 in Nanoscale
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Journal Article
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JPJonghoo Park
Jonghoo Park
HKHyun-Seok Kim
Hyun-Seok Kim
RBRobert H. Blick
Robert H. Blick
Mechanical resonators realized on the nano-scale by now offer applications in mass-sensing of biomolecules with extraordinary sensitivity. The general idea is that perfect mechanical biosensors should be of extremely small size to achieve zeptogram sensitivity in weighing single molecules similar to a balance. However, the small scale and long response time of weighing biomolecules with a cantilever restrict their usefulness as a high-throughput method. Commercial mass spectrometry (MS) such as electro-spray ionization (ESI)-MS and matrix-assisted laser desorption/ionization (MALDI)-time of flight (TOF)-MS are the gold standards to which nanomechanical resonators have to live up to. These two methods rely on the ionization and acceleration of biomolecules and the following ion detection after a mass selection step, such as time-of-flight (TOF). Hence, the spectrum is typically represented in m/z, i.e. the mass to ionization charge ratio. Here, we describe the feasibility and mass range of detection of a new mechanical approach for ion detection in time-of-flight mass spectrometry, the principle of which is that the impinging ion packets excite mechanical oscillations in a silicon nitride nanomembrane. These mechanical oscillations are henceforth detected via field emission of electrons from the nanomembrane. Ion detection is demonstrated in MALDI-TOF analysis over a broad range with angiotensin, bovine serum albumin (BSA), and an equimolar protein mixture of insulin, BSA, and immunoglobulin G (IgG). We find an unprecedented mass range of operation of the nanomembrane detector.

9 January 2022 in Nanomaterials
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Journal Article
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HPHongsik Park
Hongsik Park
JLJunyeong Lee
Junyeong Lee
CLChang-Ju Lee
Chang-Ju Lee
JKJaewoon Kang
Jaewoon Kang
JYJiyeong Yun
Jiyeong Yun
HPHongsik Park
Hongsik Park
The electrical properties of polycrystalline graphene grown by chemical vapor deposition (CVD) are determined by grain-related parameters—average grain size, single-crystalline grain sheet resistance, and grain boundary (GB) resistivity. However, extracting these parameters still remains challenging because of the difficulty in observing graphene GBs and decoupling the grain sheet resistance and GB resistivity. In this work, we developed an electrical characterization method that can extract the average grain size, single-crystalline grain sheet resistance, and GB resistivity simultaneously. We observed that the material property, graphene sheet resistance, could depend on the device dimension and developed an analytical resistance model based on the cumulative distribution function of the gamma distribution, explaining the effect of the GB density and distribution in the graphene channel. We applied this model to CVD-grown monolayer graphene by characterizing transmission-line model patterns and simultaneously extracted the average grain size (~5.95 μm), single-crystalline grain sheet resistance (~321 Ω/sq), and GB resistivity (~18.16 kΩ-μm) of the CVD-graphene layer. The extracted values agreed well with those obtained from scanning electron microscopy images of ultraviolet/ozone-treated GBs and the electrical characterization of graphene devices with sub-micrometer channel lengths.