Zinc oxide is one of the most important semiconducting metal oxides and one of the most promising n-type materials, but its practical use is limited because of both its high thermal conductivity and its low electrical conductivity. Numerous studies have shown that doping with metals in ZnO structures leads to the modification of the band gap energy. In this work, Al-doped ZnO, Ni-doped ZnO, and undoped ZnO nanocrystalline powders were prepared by a sol–gel method coupled with ultrasound irradiation, and the results show the influence of Al³⁺ and Ni²⁺ ions in the ZnO network. The doping concentrations in ZnO of 0.99 atom % for ZnO–Al and 0.80 atom % for ZnO–Ni were obtained by X-ray Fluorescence (XRF). X-ray Diffraction (XRD) and Raman Spectroscopy showed a decreased intensity and broadening of main peaks, indicating metallic ions. The crystallite size of the sample was decreased from 24.5 nm (ZnO) to 22.0 nm (ZnO–Al) and 21 nm (ZnO–Ni). The textural and morphological properties were analyzed via Nitrogen Adsorption (BET method) and Field Emission Scanning Electron Microscopy (FESEM).

Mixed-halide perovskites enable the creation of high-performance and low-cost solar cells. Chloride incorporation enhances film morphology, carrier diffusion length, and stability, improving device performance. Nevertheless, optimizing film thickness, defect density, and metal contact work function remains insufficiently explored, despite its potential to enhance power conversion efficiency. In this study, a numerical simulation was performed using SCAPS-1D (version 3.3.10) to identify the optimal parameters for the FTO/TiO₂/CH₃NH₃Pb_3−xCl_x/Spiro-OMeTAD/Au configuration. The best performance parameters that have been published in the literature based on experimental results are as follows: V_OC = 1.077 V, J_SC = 21.45 mA/cm², FF = 77.57%, and PCE = 17.97%. In contrast, the performance parameters obtained from numerical simulations for the same structure are V_OC = 1.28 V, J_SC = 21.63 mA/cm², FF = 78%, and PCE = 21.53%. In our numerical analysis, we achieved efficiencies that were comparable to those reported in experimental studies, and after optimization, superior performance parameters were attained, including V_OC = 1.179 V, J_SC = 27.26 mA/cm², FF = 81.03%, and PCE = 26.07%. These results indicate that optimized parameters can be integrated into the design and fabrication of mixed-halide perovskite solar cells to enhance performance.

In the present work, non-stoichiometric silicon oxide films (SiO_x) deposited using a hot filament chemical vapor deposition technique at short time and simple parameters of depositions are reported. This is motivated by the numerous potential applications of SiO_x films in areas such as optoelectronics. SiO_x films were characterized with different spectroscopic techniques. The deposited films have interesting characteristics such as the presence of silicon nanoclusters without applying thermal annealing, in addition to a strong photoluminescence after applying thermal annealing in the vicinity of 1.5 eV, which may be attributed to the presence of small, oxidized silicon grains (less than 2 nm) or silicon nanocrystals (Si-nc). An interesting correlation was found between oxygen content, the presence of hydrogen, and the formation of defects in the material, with parameters such as the band gap and the Urbach energies. This correlation is interesting in the development of band gap engineering for this material for applications in photonic devices.

MIS-type structures composed of silicon-rich oxide (SRO), thin films deposited by hot filament chemical vapor deposition (HFCVD), show interesting I-V and I-t properties under white light illumination and a response as photodetectors. From electrical measurements, it was found that at a reverse bias of −4 V, the illumination current increased by up to three orders of magnitude relative to the dark current, which was about 82 nA, while the photogenerated current reached a value of 25 μA. The reported MIS structure with SRO as the dielectric layer exhibited a hopping conduction mechanism, and an ohmic conduction mechanism was found with low voltage. I-t measurements confirmed the increased photogenerated current. Furthermore, the MIS structure, characterized by current-wavelength (I-λ) measurements, exhibited a maximum responsivity value at 254 mA/W, specific detectivity (D*) at 2.21 × 10¹¹ cm Hz^1/2 W⁻¹, and a noise equivalent power (NEP) of 49 pW at a wavelength of 535 nm. The structure exhibited good switching behavior, with rise and fall times between 120 and 150 ms, respectively. These rise and decay times explain the generation and recombination of charge carriers and the trapping and release of traps, respectively. These results make MIS-type structures useful as photodetectors in the 420 to 590 nm range.

In systems in atomic scale and nanoscale such as clusters or agglomerates constituted by particles from a few to less than 100 atoms, quantum confinement effects are very important. Their optical and electronic properties are often dependent on the size of the systems and the way in which the atoms in these clusters are bonded. Generally, these nanostructures display optical and electronic properties significantly different to those found in corresponding bulk materials. Silicon agglomerates embedded in silicon rich oxide (SRO) films have optical properties, which have been reported to be directly dependent on silicon nanocrystal size. Furthermore, the room temperature photoluminescence (PL) of SRO has repeatedly generated a huge interest due to its possible applications in optoelectronic devices. However, a plausible emission mechanism has not been widely accepted in the scientific community. In this work, we present a short review about the experimental results on silicon nanoclusters in SRO considering different techniques of growth. We focus mainly on their size, Raman spectra, and photoluminescence spectra. With this as background, we employed the density functional theory with a functional B3LYP and a basis set 6-31G* to calculate the optical and electronic properties of clusters of silicon (constituted by 15 to 20 silicon atoms). With the theoretical calculation of the structural and optical properties of silicon clusters, it is possible to evaluate the contribution of silicon agglomerates in the luminescent emission mechanism, experimentally found in thin SRO films.

In this work, a novel route is discussed to produce in one step ZnO/Burkeite powders by the modified solution combustion method. The ZnO particles enhance the photocatalytic activity in the degradation of Rhodamine B, in which Burkeite mineral acts as a support due to the pH-dependent morphology of the particle aggregates of the as-synthesized powders. The X-ray diffraction (XRD) characterization shows the presence of a heterostructure: ZnO/Burkeite. The Scanning Electron Microscopy (SEM) image shows a morphological dependence with the pH of the solution used for the synthesis. The results show that the system with the highest degradation (92.4%) corresponds to the case in which ZnO/Burkeite heterostructure was synthesized with a pH 11.