As an important supplementary material to graphene in the optoelectronics field, molybdenum disulfide (MoS₂) has attracted attention from researchers due to its good light absorption capacity and adjustable bandgap. In this paper, MoS₂ layers are respectively grown on SiO₂/Si and sapphire substrates by atmospheric pressure chemical vapor deposition (APCVD). Atomic force microscopy, optical microscopy, and Raman and photoluminescence spectroscopy are used to probe the optical properties of MoS₂ on SiO₂/Si and sapphire substrates systematically. The peak shift between the characteristic A_1g and E¹_2g peaks increases, and the I peak of the PL spectrum on the SiO₂/Si substrate redshifts slightly when the layer numbers were increased, which can help in obtaining the layer number and peak position of MoS₂. Moreover, the difference from monolayer MoS₂ on the SiO₂/Si substrate is that the B peak of the PL spectrum has a blueshift of 56 meV and the characteristic E¹_2g peak of the Raman spectrum has no blueshift. The 1- and 2-layer MoS₂ on a sapphire substrate had a higher PL peak intensity than that of the SiO₂/Si substrate. When the laser wavelength is transformed from 532 to 633 nm, the position of I exciton peak has a blueshift of 16 meV, and the PL intensity of monolayer MoS₂ on the SiO₂/Si substrate increases. The optical properties of MoS₂ can be obtained, which is helpful for the fabrication of optoelectronic devices.

The excellent transmission characteristics of graphene surface plasmon polaritons in mid-infrared band were analyzed and verified effectively through theoretical derivation and soft simulation in this paper. Meanwhile, a sandwich waveguide structure of dielectric–graphene–substrate–dielectric based on graphene surface plasmon polaritons (SPPs) was presented. Simulation results indicate that graphene SPPs show unique properties in the mid-infrared region including ultra-compact mode confinement and dynamic tunability, which allow these SPPs to overcome the defects of metal SPPs and traditional silicon-based optoelectronic devices. Thus, they can be used to manufacture subwavelength devices. The work in this paper lays a theoretical foundation for the application of graphene SPPs in the mid-infrared region.

The process of ion cutting was used to integrate single crystalline Si layers on glass for potential active matrix flat panel display and other applications. It was found that p-Si wafers implanted at 100–150 °C with H with a dose in the order of a few times 1016 cm−2 could be readily bonded to glass substrates when both of the surfaces were properly treated and activated. The as-implanted Si wafer surface was converted from p type to n type. Upon bonding at room temperature, annealing (300 °C) and exfoliation (450 °C), the transferred Si layer on glass and the as-exfoliated surface of the implanted Si wafer remained n type. A highly defective region was observed near the top of the Si layer on glass, however the crystalline quality was nearly defect free in the deeper region of the layer. Annealing at sequentially higher temperatures led to the recovery of p type conductivity at ∼600–650 °C. The type conversion and the subsequent annealing behavior observed on the samples were rationalized in terms of ion enhanced oxygen diffusion and the presence of H-related shallow donors in the Si.

To improve the on-state current and reduce the miller capacitance of the conventional junction-less tunneling field effect transistor (JLTFET), the junction-less TFET with Ge/Si_0.3Ge_0.7/Si heterojunction and heterogeneous gate dielectric (H-JLTFET) is investigated by the Technology Computer Aided Design (TCAD) simulation in this paper. The source region uses the narrow bandgap semiconductor material germanium to obtain the higher on-state current; the gate dielectric adjacent to the drain region adopts the low-k dielectric material SiO₂, which is considered to reduce the gate-to-drain capacitance effectively. Moreover, the gap region uses the Si_0.3Ge_0.7 material to decrease the tunneling distance. In addition, the effects of the device sizes, doping concentration and work function on the performance of the H-JLTFET are analyzed systematically. The optimal on-state current and switching ratio of the H-JLTFET can reach 6 µA/µm and 2.6 × 10¹², which are one order of magnitude and four orders of magnitude larger than the conventional JLTFET, respectively. Meanwhile, the gate-to-drain capacitance, off-state current and power consumption of the H-JLTFET can be effectively suppressed, so it will have a great potential in future ultra-low power integrated circuit applications.

A modulator is the core of many optoelectronic applications such as communication and sensing. However, a traditional modulator can hardly reach high modulation depth. In order to achieve the higher modulation depth, a graphene electro-optical switch modulator is proposed by adjusting propagation length in the near infrared band. The switch modulator is designed based on a hybrid plasmonic waveguide structure, which is comprised of an SiO₂ substrate, graphene–Si–graphene heterostructure, Ag nanowire and SiO₂ cladding. The propagation length of the hybrid plasmonic waveguide varies from 0.14 μm to 20.43 μm by the voltage tunability of graphene in 1550 nm incident light. A modulator with a length of 3 μm is designed based on the hybrid waveguide and it achieves about 100% modulation depth. The lower energy loss (~1.71 fJ/bit) and larger 3 dB bandwidth (~83.91 GHz) are attractive for its application in a photoelectric integration field. In addition, the excellent robustness (error of modulation effects lower than 8.84%) is practical in the fabrication process. Most importantly, by using the method of adjusting propagation length, other types of graphene modulators can also achieve about 100% modulation depth.

In this paper, a new electro-optical switch modulator based on the surface plasmon polaritons of graphene is proposed. An air–graphene-substrate–dielectric structure is adopted in the modulator. In this structure, the graphene is considered as a film of metal whose thickness tends to be infinitesimal. By changing the external voltage, the boundary conditions can be changed to decide whether the surface plasmon polariton waves can be excited in mid-infrared band. Because of this effect, the structure can be used as an electro–optical switch modulator, whose modulation depth is about 100% in theory. Finally, the 3 dB bandwidth (~34 GHz) and the energy loss (36.47 fJ/bit) of the electro–optical switch modulator are given, whose low energy loss is very suitable for engineering applications.