Silicon carbide (SiC) has been envisioned as an almost ideal material for power electronic devices; however, device reliability is still a great challenge. Here we investigate the reliability of commercial 1.2-kV 4H-SiC MOSFETs under repetitive unclamped inductive switching (UIS). The stress invoked degradation of the device characteristics, including the output and transfer characteristics, drain leakage current, and capacitance characteristics. Besides the shift of steady-state electrical characteristics, a significant change in switching times points out the charge trapping phenomenon. Transient capacitance spectroscopy was applied to investigate charge traps in the virgin device as well as after UIS stress. The intrinsic traps due to metal impurities or ${\mathrm{Z}}_{1,2}$ transitions were recognized in the virgin device. The UIS stress caused suppression of the second stage of the ${\mathrm{Z}}_{1,2}$ transition, and only the first stage, ${\mathrm{Z}}_1^0$, was observed. Hence, the UIS stress is causing the reduction of multiple charging of carbon vacancies in SiC-based devices.

The whole world is currently focused on COVID-19, which causes considerable economic and social damage. The disease is spreading rapidly through the population, and the effort to stop the spread is entirely still failing. In our article, we want to contribute to the improvement of the situation. We propose a tracking system that would identify affected people with greater accuracy than medical staff can. The main goal was to design hardware and construct a device that would track anonymous risky contacts in areas with a highly concentrated population, such as schools, hospitals, large social events, and companies. We have chosen a 2.4 GHz proprietary protocol for contact monitoring and mutual communication of individual devices. The 2.4 GHz proprietary protocol has many advantages such as a low price and higher resistance to interference and thus offers benefits. We conducted a pilot experiment to catch bugs in the system. The device is in the form of a bracelet and captures signals from other bracelets worn at a particular location. In case of contact with an infected person, the alarm is activated. This article describes the concept of the tracking system, the design of the devices, initial tests, and plans for future use.

This paper investigates a degradation of three types of automotive power MOSFETs through repetitive Unclamped Inductive Switching (UIS) test typically used to evaluate the avalanche robustness of power devices. It is not uncommon in switching applications that greater than the planned voltage for voltage spikes can occur, so even the best electronic designs may encounter frequent avalanche events. Hence, there is a need to analyse the impact of repetitive avalanching on the electrical performance of power transistors. This article focused on the shift of main electrical parameters: on-resistance R-ON, breakdown voltage V-BR, threshold voltage V-TH, and corresponding characteristics, as well as capacitances. Analysis proved that DMOS transistors are less vulnerable to repetitive avalanching. The most impacted parameter was on-resistance R-DSon, where a 14 % increase was observed after 6 . 10(7) stress pulses. The parameters shift is attributed to hot carrier injection in the space charge region of blocking PN junction and involves mainly defects generation/activation in the drain side region of the gate oxide. For the TrenchMOS transistor, a significant shift of I - V curves was observed with considerable impact on the R-ON where an increase of 22 % was observed. The trench corner is verified to be the mainly degraded region by Synopsys Technology Computer Aided Design (TCAD) simulations. Degradation of drain-gate capacitance C-DG and input capacitance C-in was observed in all three types of analysed structures. DLTS was used to verify the generation/activation of defects invoked by stress. An increase of DLTS signal corresponding to energy levels of oxygen vacancies and impurities in SiO2 and on interfaces were detected on stressed samples.