Basic knowledge about the factors and mechanisms affecting the performance of solar cells and their identification is essential when thinking of future improvements to the device. Within this paper, we investigated the current transport mechanism in GaAsN p-i-n solar cells grown with atmospheric pressure metal organic vapour phase epitaxy (AP-MOVPE). We examined the electro-optical and structural properties of a GaAsN solar cell epitaxial structure and correlated the results with temperature-dependent current-voltage measurements and deep level transient spectroscopy findings. The analysis of J-V-T measurements carried out in a wide temperature range allows for the determination of the dominant current transport mechanism in a GaAsN-based solar cell device and assign it a nitrogen interstitial defect, the presence of which was confirmed by DLTFS investigation.

A massive open online course (MOOC) is an online course that is designed for the participation of large numbers of geographically dispersed students. In addition to traditional course materials such as videos, readings, and problem sets, MOOCs provide interactive user forums that help build a community for the students, professors, and teaching assistants. Perhaps the most striking thing about MOOCs, many of which are being taught by professors at prestigious universities, is that they're free. The authors in this paper are focusing on the challenges, advantages and rewards of the MOOC model in engineering education.

Silicon carbide (SiC) has been envisioned as an almost ideal material for power electronic devices; however, device reliability is still a great challenge. Here we investigate the reliability of commercial 1.2-kV 4H-SiC MOSFETs under repetitive unclamped inductive switching (UIS). The stress invoked degradation of the device characteristics, including the output and transfer characteristics, drain leakage current, and capacitance characteristics. Besides the shift of steady-state electrical characteristics, a significant change in switching times points out the charge trapping phenomenon. Transient capacitance spectroscopy was applied to investigate charge traps in the virgin device as well as after UIS stress. The intrinsic traps due to metal impurities or ${\mathrm{Z}}_{1,2}$ transitions were recognized in the virgin device. The UIS stress caused suppression of the second stage of the ${\mathrm{Z}}_{1,2}$ transition, and only the first stage, ${\mathrm{Z}}_1^0$, was observed. Hence, the UIS stress is causing the reduction of multiple charging of carbon vacancies in SiC-based devices.

Industry 5.0 had been envisioned as a new era of the Industry that goes beyond simple efficiency and productivity. Instead of trivial economic benefits, it puts human society on a pedestal. The human needs and society as a whole are prioritised against the rise of material wealth. Cyberspace and physical space are merged to find a solution to social problems. The life-quality improvement, ageing society, climate change and sustainable development are new challenges that require a novel approach. People must stop working for the industry, but on the contrary, the industry must start working for people. There was always an idea conflict between the universities and the industry. Even though the industry is asking to train people for present today, the universities are teaching for tomorrow to be ready for the future. This is not enough anymore. Fulfilling the Industry 5.0 vision requires Universities 5.0. Excellent science needs to meet the needs of society. University research should be the pathfinder, while the industry is the accelerator of change. University students need a limitless global education, merging nations on the way to new knowledge and breakthrough discoveries. The industry should not be the only recipient of university graduates but the direct participant of the education and supporter of the technology transfer. This paper discusses the challenges and solutions in cooperation between technical universities and employers in the context of the Industry 5.0 trend. It also tries to answer the question of what are the limits of academic freedom in university education when dealing with the demands of Industry 5.0.

This paper is dedicated to electro-physical characterisation of a GaAs p-i-n structure grown for solar cell applications, which was carried out by light and dark current-voltage (I–V) and Deep Level Transient Fourier Spectroscopy (DLTFS) methods. The conversion efficiency and open-circuit voltage were determined fromI–Vmeasurement at 1 and 20× sun light concentrations. Three electron like defects TA_n1, TA_n2, TD_nand one hole like defect TBp obtained by DLTFS measurements were confirmed. The origin of these defect states was stated as native GaAs impurities.