A gate engineered InGaN dopingless tunnel FET (DL-TFET) using the charge plasma concept is proposed and investigated by silvaco Atlas simulation. In0.75Ga0.25N is a direct gap semiconductor, and the effective tunneling mass of electron and hole is smaller than that of silicon, which induces that the drain current and average subthreshold swing (SSavg) of InGaN DL-TFET improve 1.3 x 10² times and 51.1% than that of Si DL-TFET at the overdrive voltage of 0.5 V, respectively. What is more, better device performances are achieved by gate engineering with appropriate "In" fraction, proper space between the gate and source (Lgs), and appropriate tunneling gate work function (ɸTG). The direct-current, RF, and energy-efficient performance studies show that SSavg of 7.9 mV/dec, an on-state current (ION) of 8.02 x 10⁻⁵ A/μm, a cutoff frequency (fT) of 119 GHz, and an energy delay product of 0.64 fJ-ps/μm can be obtained in the proposed TFET. This paper indicates that the gate engineered InGaN DL-TFET is a promising TFET for low-power RF and digital logic applications.

This letter reports the large maximum drain current AlGaN channel high-electron-mobility transistors (HEMTs) of 849 mA/mm with graded buffers and constant channel layer. The large drain current and the transconductance benefit from the high electronic mobility of 807 cm2/V·s and high saturated velocity. Furthermore, the device also shows a low off-state drain current of ~1 nA/mm and an ultrahigh Ion/Ioff up to ~109. To the best of the authors’ knowledge, the electronic mobility, the maximum drain current and Ion/Ioff ratio all are the largest reported results ever achieved on the AlGaN channel HEMTs. These results not only drastically reduce the performance gaps between the AlGaN channel HEMT and the GaN channel HEMT in the maximum drain current, the maximum transconductance and the electronic mobility, but also demonstrate better performances in the gate leakage current, the off-state drain current, Ion/Ioff ratio, and the breakdown voltage.

A drain engineered InGaN heterostructure tunnel field effect transistor (TFET) is proposed and investigated by Silvaco Atlas simulation. This structure uses an additional metal on the drain region to modulate the energy band near the drain/channel interface in the drain regions, and increase the tunneling barrier for the flow of holes from the conduction band of the drain to the valence band of the channel region under negative gate bias for n-TFET, which induces the ambipolar current being reduced from 1.93 × 10⁻⁸ to 1.46 × 10⁻¹¹ A/μm. In addition, polar InGaN heterostructure TFET having a polarization effect can adjust the energy band structure and achieve steep interband tunneling. The average subthreshold swing of the polar drain engineered heterostructure TFET (DE-HTFET) is reduced by 53.3% compared to that of the nonpolar DE-HTFET. Furthermore, I_ON increases 100% from 137 mA/mm of nonpolar DE-HTFET to 274 mA/mm of polar DE-HTFET.