Jonas Deuermeier

Dr. Jonas Deuermeier

i3N/CENIMAT, Department of Materials Science, Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa, Caparica, Portugal
orcid

Research Focus & Metrics

Academic Career Length

16Years (2011-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

View All Publications
12 November 2018 in Advanced Functional Materials
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Journal Article
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ACAlexandre F. Carvalho
Alexandre F. Carvalho
AFAntónio J. S. Fernandes
António J. S. Fernandes
Catia LeitaoCatia Leitao
Catia Leitao
Jonas DeuermeierJonas Deuermeier
Jonas Deuermeier
Ana MarquesAna Marques
Ana Marques
FCFlorinda M. Costa
Florinda M. Costa

15 August 2016 in ACS Applied Materials & Interfaces
Verified
Journal Article
Closed access
SSSebastian Siol
Sebastian Siol
JHJan C. Hellmann
Jan C. Hellmann
DTDavid Tilley
David Tilley
MGMichael Graetzel
Michael Graetzel
JMJan Morasch
Jan Morasch
AKAndreas Klein
Andreas Klein

5 January 2022 in Advanced Materials Technologies
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Journal Article
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BKBohdan Kulyk
Bohdan Kulyk
BSBeatriz F. R. Silva
Beatriz F. R. Silva
ACAlexandre F. Carvalho
Alexandre F. Carvalho
Paula BarbosaPaula Barbosa
Paula Barbosa
AGAna Violeta Girão
Ana Violeta Girão
FCFlorinda M. Costa
Florinda M. Costa

1 June 2011 in Journal of Applied Physics
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Journal Article
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Jonas DeuermeierJonas Deuermeier
Jonas Deuermeier
JGJürgen Gassmann
Jürgen Gassmann
JBJoachim Brötz
Joachim Brötz
AKAndreas Klein
Andreas Klein
Thin films of copper oxides were prepared by reactive magnetron sputtering and structural, morphological, chemical, and electronic properties were analyzed using x-ray diffraction, atomic force microscopy, in situ photoelectron spectroscopy, and electrical resistance measurements. The deposition conditions for preparation of Cu(I)-oxide (Cu2O ) are identified. In addition, the interface formation between Cu2O and Sn-doped In2O3 (ITO) was studied by stepwise deposition of Cu2O onto ITO and vice versa. A type II (staggered) band alignment with a valence band offset ΔEVB = 2.1–2.6 eV depending on interface preparation is observed. The band alignment explains the nonrectifying behavior of p-Cu2O /n-ITO junctions, which have been investigated for thin film solar cells.

1 April 2016 in Solar Energy Materials and Solar Cells
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Journal Article
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KKKasra Kardarian
Kasra Kardarian
Daniela NunesDaniela Nunes
Daniela Nunes
PSPaolo Maria Sberna
Paolo Maria Sberna
AGAdam Ginsburg
Adam Ginsburg
DKDavid A. Keller
David A. Keller
Elvira FortunatoElvira Fortunato
Elvira Fortunato

17 May 2018 in Advanced Electronic Materials
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Journal Article
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CFCristina Fernandes
Cristina Fernandes
ASAna Santa
Ana Santa
ÂSÂngelo Santos
Ângelo Santos
PBPydi Bahubalindruni
Pydi Bahubalindruni
Jonas DeuermeierJonas Deuermeier
Jonas Deuermeier
Pedro BarquinhaPedro Barquinha
Pedro Barquinha