Stefania M. S. Privitera

Dr. Stefania M. S. Privitera

Institute for Microelectronics and Microsystems (IMM), National Research Council (CNR), Catania, Italy
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Research Focus & Metrics

Academic Career Length

29Years (1998-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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11 October 2004 in Applied Physics Letters
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Stefania M. S. PriviteraStefania M. S. Privitera
Stefania M. S. Privitera
ERE. Rimini
E. Rimini
RZR. Zonca
R. Zonca
The amorphous-to-crystal transition has been studied through in situ resistance measurements in Ge2Sb2Te5 thin films doped by ion implantation with nitrogen or oxygen. The dependence of the electrical resistivity and structure on the annealing temperature and time has been investigated in samples with different dopant concentrations. Enhancement of the thermal stability and increase of the mobility gap for conduction have been observed in O- and N-doped amorphous Ge2Sb2Te5 . Larger effects have been found in the case of nitrogen doping.

1 September 2013 in Microelectronic Engineering
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Stefania M. S. PriviteraStefania M. S. Privitera
Stefania M. S. Privitera
GBG. Bersuker
G. Bersuker
BBB. Butcher
B. Butcher
AKA. Kalantarian
A. Kalantarian
SLS. Lombardo
S. Lombardo
PKP.D. Kirsch
P.D. Kirsch

31 May 2004 in Applied Physics Letters
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Stefania M. S. PriviteraStefania M. S. Privitera
Stefania M. S. Privitera
CBC. Bongiorno
C. Bongiorno
ERE. Rimini
E. Rimini
RZR. Zonca
R. Zonca
The kinetics of the amorphous-to-crystal transition in Ge2Sb2Te5 thin films have been studied through in situ transmission electron microscopy analyses. By following the time evolution of the grain density and size, the growth velocity and the nucleation rate have been separately measured at different annealing temperatures. Activation energies of 2.9±0.5 eV and 2.3±0.4 eV have been obtained for the nucleation rate and the growth velocity, respectively. The barrier energy for the nucleation of a critical nucleus ΔG* has been evaluated, and the scalability of phase change nonvolatile memories has been estimated.

15 July 2018 in Sensors
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Salvatore TudiscoSalvatore Tudisco
Salvatore Tudisco
Francesco La ViaFrancesco La Via
Francesco La Via
Clementina AgodiClementina Agodi
Clementina Agodi
CACarmen Altana
Carmen Altana
GBGiacomo Borghi
Giacomo Borghi
AZAnd M. Zimbone
And M. Zimbone
Silicon carbide (SiC) is a compound semiconductor, which is considered as a possible alternative to silicon for particles and photons detection. Its characteristics make it very promising for the next generation of nuclear and particle physics experiments at high beam luminosity. Silicon Carbide detectors for Intense Luminosity Investigations and Applications (SiCILIA) is a project starting as a collaboration between the Italian National Institute of Nuclear Physics (INFN) and IMM-CNR, aiming at the realization of innovative detection systems based on SiC. In this paper, we discuss the main features of silicon carbide as a material and its potential application in the field of particles and photons detectors, the project structure and the strategies used for the prototype realization, and the first results concerning prototype production and their performance.

1 October 2003 in Journal of Applied Physics
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Stefania M. S. PriviteraStefania M. S. Privitera
Stefania M. S. Privitera
ERE. Rimini
E. Rimini
CBC. Bongiorno
C. Bongiorno
RZR. Zonca
R. Zonca
APA. Pirovano
A. Pirovano
RBR. Bez
R. Bez
The electrical properties and the structure of isothermally annealed thin films of Ge2+xSb2Te5 (x=0 and 0.5) have been studied by in situ electrical measurements, x-ray diffraction, and transmission electron microscopy analyses. Phase separation has been observed in samples with an excess of Ge; by annealing amorphous Ge2.5Sb2Te5 films at temperatures in the range 130–160 °C, the material cannot be completely converted into the metastable face-centered-cubic (fcc) structure. At temperatures higher than 160 °C, the residual amorphous material may be converted into a fcc structure with a lower lattice parameter.

7 September 2021 in Solar RRL
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SCSonya Calnan
Sonya Calnan
RBRory Bagacki
Rory Bagacki
FBFuxi Bao
Fuxi Bao
IDIris Dorbandt
Iris Dorbandt
EKErno Kemppainen
Erno Kemppainen
Ilknur Bayrak PehlivanIlknur Bayrak Pehlivan
Ilknur Bayrak Pehlivan
Direct solar hydrogen generation via a combination of photovoltaics (PV) and water electrolysis can potentially ensure a sustainable energy supply while minimizing greenhouse emissions. The PECSYS project aims at demonstrating a solar‐driven electrochemical hydrogen generation system with an area >10 m2with high efficiency and at reasonable cost. Thermally integrated PV electrolyzers (ECs) using thin‐film silicon, undoped, and silver‐doped Cu(In,Ga)Se2and silicon heterojunction PV combined with alkaline electrolysis to form one unit are developed on a prototype level with solar collection areas in the range from 64 to 2600 cm2with the solar‐to‐hydrogen (StH) efficiency ranging from ≈4 to 13%. Electrical direct coupling of PV modules to a proton exchange membrane EC to test the effects of bifaciality (730 cm2solar collection area) and to study the long‐term operation under outdoor conditions (10 m2collection area) is also investigated. In both cases, StH efficiencies exceeding 10% can be maintained over the test periods used. All the StH efficiencies reported are based on measured gas outflow using mass flow meters.