This paper reports on field-effect-transistor-based terahertz detectors for the operation at discrete frequencies spanning from 0.2 to 4.3 THz. They are implemented using a 150-nm CMOS process technology, employ self-mixing in the n-channels of the transistors and operate well above the transistors' cutoff frequency. The theoretical description of device operation by Dyakonov and Shur is extended in order to describe the device impedance, responsivity, and noise-equivalent power for a novel detection concept, which couples the signal to the drain. This approach enables quasi-static (QS) detection and calibration of the detectors. The different transport regimes (i.e., QS, distributed resistive, and plasmonic mixing) and their transitions are theoretically discussed and experimentally accessed. Responsivity values of 350 V/W at 595 GHz, 30 V/W at 2.9 THz, and 5 V/W at 4.1 THz are reported. At 0.595 THz, we determine the optical noise equivalent power (NEP) to be 42 pW/√Hz ; at 2.9 THz, the value is 487 pW/√Hz. All values are reported for optimum gate bias with respect to NEP at 295 K. For 0.595 THz, theory predicts a NEP value at threshold as low as 2 pW/√Hz for ideal coupling of the radiation.
30 August 2011 in IEEE Transactions on Terahertz Science and Technology
This paper presents a survey of the status of five active THz imaging modalities which we have developed and investigated during the last few years with the goal to explore their potential for real-time imaging. We start out by introducing a novel waveguide-based all-electronic imaging system which operates at 812 GHz. Its salient feature is a 32-pixel linear detector array heterodyne-operated at the eighth subharmonic. This array in combination with a telescope optics for object distances of 2-6 m reaches a data acquisition speed suited for real-time imaging. The second system described then is again an all-electronic scanner (now for around 300 GHz ), designed for object distances of ≥ 8 m , which combines mechanical scanning in vertical direction, synthetic-aperture image generation in horizontal direction, and frequency-modulated continuous-wave sweeping for the depth information. The third and fourth systems follow an optoelectronic approach by relying on several- to multi-pixel parallel electrooptic detection. One imager is based on a pulsed THz-OPO and homodyne detection with a CCD camera, the other on either continuous-wave electronic or femtosecond optoelectronic THz sources and a photonic-mixing device (PMD) camera. The article concludes with a description of the state of the art of imaging with focal-plane arrays based on CMOS field-effect transistors.
11 June 2019 in IEEE Transactions on Terahertz Science and Technology
Many emerging applications in the terahertz (THz) frequency range demand highly sensitive, broadband detectors for room-temperature operation. Field-effect transistors with integrated antennas for THz detection (TeraFETs) have proven to meet these requirements, at the same time offering great potential for scalability, high-speed operation, and functional integrability.
We present broadband high sensitivity THz detectors based on 90 nm CMOS technology with state-of-the-art performance. The devices are based on bow-tie and log-spiral antennacoupled field-effect transistors (FETs) for the detection of freespace terahertz (THz) radiation (TeraFETs). We report on optimized performance, which was achieved by employing an in-house developed physics-based model during detector design and thorough device characterization under THz illumination. The implemented detector with bow-tie antenna design exhibits a nearly flat frequency response characteristic up to 2.2 THz with an optical responsivity of 45 mA/W (or 220 V/W). We have determined a minimum optical noise-equivalent power (NEP) as low as 48 pW/√Hz at 0.6 THz and 70 pW/√Hz at 1.5 THz. The results obtained at 1.5 THz are better than the best narrowband TeraFETs reported in the literature at this frequency and only up to a factor of four inferior to the best narrowband devices at 0.6 THz.
28 June 2010 in IEEE Transactions on Microwave Theory and Techniques
This paper presents the research and development of two terahertz imaging systems based on photonic and electronic principles, respectively. As part of this study, a survey of ongoing research in the field of terahertz imaging is provided focusing on security applications. Existing terahertz imaging systems are reviewed in terms of the employed architecture and data processing strategies. Active multichannel measurement method is found to be promising for real-time applications among the various terahertz imaging techniques and is chosen as a basis for the imaging instruments presented in this paper. An active system operation allows for a wide dynamic range, which is important for image quality. The described instruments employ a multichannel high-sensitivity heterodyne architecture and aperture filling techniques, with close to real-time image acquisition time. In the case of the photonic imaging system, mechanical scanning is completely obsolete. We show 2-D images of simulated 3-D image data for both systems. The reconstruction algorithms are suitable for 3-D real-time operation, only limited by mechanical scanning.