Ga₂O₃ thin films were fabricated by the electron-beam evaporation technique at a varying oxygen partial pressure from 0 to 2.0 × 10⁻² Pa. The effect of oxygen partial pressure on the crystalline structure and optical properties of the Ga₂O₃ films was analyzed using sophisticated techniques including X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), Raman spectroscopy, spectroscopic ellipsometry, ultraviolet-visible spectroscopy and a laser-induced damage test system. The correlation between the oxygen partial pressure and the film’s properties in optics and materials were investigated. XRD and Raman revealed that all films were amorphous in spite of applying a varying oxygen partial pressure. With the change of oxygen partial pressure, XPS data indicated that the content of oxygen in the Ga₂O₃ films could be broadly modulable. As a result, a changeable refractive index of the Ga₂O₃ film is realizable and a variable blue-shift of absorption edges in transmittance spectra of the films is achievable. Moreover, the damage threshold value varied from 0.41 to 7.51 J/cm² according to the rise of oxygen partial pressure. These results demonstrated that the optical properties of Ga₂O₃ film can be broadly tunable by controlling the oxygen content in the film.

• Oncolytic virotherapy and lung cancer. • Design and delivery of oncolytic viruses. • Oncolytic virus combined with standard treatment of lung cancer. • Oncolytic virus combined with lung cancer immunotherapy strategy.

A six-channel fan-shaped integrated narrow-band filter on a silicon substrate was designed on the basis of the Fabray–Perot (FP) theory and was fabricated using e-beam thermal evaporation. The central wavelength was modulated by modifying the FP cavity thickness using the combination mask method. Germanium and zinc sulfide were selected as the high and low refractive index film materials, respectively. Its average peak transmission reached 83.3%, the cut-off transmittance was less than 1%, and the full width at half maximum (FWHM) changed from 55 and 94 nm, and the central wavelength positioning accuracy error was less than 0.35%. Furthermore, transmittance was also calculated inversely, using the thickness of each layer of films, in order to deduce the reason of the decrease in peak transmittance. Thickness deviation of each layer and interface scattering contributed to the decrease of peak transmittance. Compared with the same type of products in the market, our filter showed better properties than that of some published and commercial filter.

An NN ⁺ /MS double-junction nanowire silicon-based photodetector was fabricated, which exhibits excellent high-sensitivity, ultralow dark current, and broadband detection performances.